GB2334391B - Circuit for standby current reduction - Google Patents
Circuit for standby current reductionInfo
- Publication number
- GB2334391B GB2334391B GB9903237A GB9903237A GB2334391B GB 2334391 B GB2334391 B GB 2334391B GB 9903237 A GB9903237 A GB 9903237A GB 9903237 A GB9903237 A GB 9903237A GB 2334391 B GB2334391 B GB 2334391B
- Authority
- GB
- United Kingdom
- Prior art keywords
- circuit
- current reduction
- standby current
- standby
- reduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980004191A KR100252844B1 (en) | 1998-02-12 | 1998-02-12 | Circuit for standby current reduction |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9903237D0 GB9903237D0 (en) | 1999-04-07 |
| GB2334391A GB2334391A (en) | 1999-08-18 |
| GB2334391B true GB2334391B (en) | 2000-03-29 |
Family
ID=19532939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9903237A Expired - Fee Related GB2334391B (en) | 1998-02-12 | 1999-02-12 | Circuit for standby current reduction |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6288586B1 (en) |
| JP (1) | JP3883319B2 (en) |
| KR (1) | KR100252844B1 (en) |
| DE (1) | DE19905749B4 (en) |
| GB (1) | GB2334391B (en) |
| TW (1) | TW415079B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11328955A (en) * | 1998-05-14 | 1999-11-30 | Mitsubishi Electric Corp | Semiconductor circuit device |
| JP3912960B2 (en) * | 2000-06-20 | 2007-05-09 | 株式会社東芝 | Semiconductor integrated circuit, logical operation circuit, and flip-flop |
| JP4366858B2 (en) * | 2000-09-18 | 2009-11-18 | ソニー株式会社 | MOS transistor circuit |
| JP4291295B2 (en) * | 2005-04-08 | 2009-07-08 | エルピーダメモリ株式会社 | Logic circuit |
| US20080054973A1 (en) * | 2006-09-06 | 2008-03-06 | Atmel Corporation | Leakage improvement for a high-voltage latch |
| US7904847B2 (en) * | 2008-02-18 | 2011-03-08 | International Business Machines Corporation | CMOS circuit leakage current calculator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4384220A (en) * | 1980-02-06 | 1983-05-17 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Transistor circuit with a power-down function |
| US5084638A (en) * | 1991-03-11 | 1992-01-28 | Motorola, Inc. | Driver circuit with controlled output drive signal characteristics |
| GB2300985A (en) * | 1995-05-19 | 1996-11-20 | Hyundai Electronics Ind | CMOS IC with reduced subthreshold standby leakage current |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160213A (en) * | 1981-03-27 | 1982-10-02 | Toshiba Corp | Flip-flop circuit |
| JPS57192138A (en) * | 1981-05-21 | 1982-11-26 | Fujitsu Ltd | Logical circuit providing power save function |
| EP0225960B1 (en) * | 1985-12-07 | 1991-03-20 | Deutsche ITT Industries GmbH | Cmos inverter chain |
| JP2660056B2 (en) * | 1989-09-12 | 1997-10-08 | 三菱電機株式会社 | Complementary MOS semiconductor device |
| JP3126766B2 (en) * | 1990-12-07 | 2001-01-22 | 三菱電機株式会社 | Semiconductor device and method of manufacturing the same |
| US5329175A (en) * | 1992-11-13 | 1994-07-12 | Advanced Micro Devices, Inc. | Reduced noise, low power, high speed output buffer |
| US5592114A (en) * | 1994-07-14 | 1997-01-07 | National Science Counsil | True type single-phase shift circuit |
| US5642061A (en) * | 1995-04-17 | 1997-06-24 | Hitachi America, Ltd. | Short circuit current free dynamic logic clock timing |
| DE19601370C1 (en) * | 1996-01-16 | 1997-06-12 | Siemens Ag | Static holding elements with a single-phase control signal |
| US5917355A (en) * | 1997-01-16 | 1999-06-29 | Sun Microsystems, Inc. | Edge-triggered staticized dynamic flip-flop with conditional shut-off mechanism |
-
1998
- 1998-02-12 KR KR1019980004191A patent/KR100252844B1/en not_active Expired - Fee Related
-
1999
- 1999-01-15 TW TW088100584A patent/TW415079B/en not_active IP Right Cessation
- 1999-02-03 US US09/243,469 patent/US6288586B1/en not_active Expired - Lifetime
- 1999-02-11 DE DE19905749A patent/DE19905749B4/en not_active Expired - Fee Related
- 1999-02-12 JP JP03414099A patent/JP3883319B2/en not_active Expired - Fee Related
- 1999-02-12 GB GB9903237A patent/GB2334391B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4384220A (en) * | 1980-02-06 | 1983-05-17 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Transistor circuit with a power-down function |
| US5084638A (en) * | 1991-03-11 | 1992-01-28 | Motorola, Inc. | Driver circuit with controlled output drive signal characteristics |
| GB2300985A (en) * | 1995-05-19 | 1996-11-20 | Hyundai Electronics Ind | CMOS IC with reduced subthreshold standby leakage current |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2334391A (en) | 1999-08-18 |
| KR100252844B1 (en) | 2000-04-15 |
| DE19905749B4 (en) | 2004-04-29 |
| JPH11284501A (en) | 1999-10-15 |
| JP3883319B2 (en) | 2007-02-21 |
| GB9903237D0 (en) | 1999-04-07 |
| KR19990069746A (en) | 1999-09-06 |
| TW415079B (en) | 2000-12-11 |
| US6288586B1 (en) | 2001-09-11 |
| DE19905749A1 (en) | 1999-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20111117 AND 20111123 |
|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20120705 AND 20120711 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20160212 |