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GB2327534B - Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus - Google Patents

Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus

Info

Publication number
GB2327534B
GB2327534B GB9815387A GB9815387A GB2327534B GB 2327534 B GB2327534 B GB 2327534B GB 9815387 A GB9815387 A GB 9815387A GB 9815387 A GB9815387 A GB 9815387A GB 2327534 B GB2327534 B GB 2327534B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
manufacturing
manufacturing apparatus
device manufacturing
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9815387A
Other versions
GB9815387D0 (en
GB2327534A (en
Inventor
Kenji Okamura
Shuji Fujiwara
Takao Katuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9815387D0 publication Critical patent/GB9815387D0/en
Publication of GB2327534A publication Critical patent/GB2327534A/en
Application granted granted Critical
Publication of GB2327534B publication Critical patent/GB2327534B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3451—
    • H10P14/36—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9815387A 1997-07-18 1998-07-15 Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus Expired - Fee Related GB2327534B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9194419A JPH1140770A (en) 1997-07-18 1997-07-18 Semiconductor device manufacturing method and semiconductor manufacturing apparatus

Publications (3)

Publication Number Publication Date
GB9815387D0 GB9815387D0 (en) 1998-09-16
GB2327534A GB2327534A (en) 1999-01-27
GB2327534B true GB2327534B (en) 2002-04-24

Family

ID=16324298

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9815387A Expired - Fee Related GB2327534B (en) 1997-07-18 1998-07-15 Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus

Country Status (5)

Country Link
US (1) US6143619A (en)
JP (1) JPH1140770A (en)
KR (1) KR100304136B1 (en)
CN (1) CN1207579A (en)
GB (1) GB2327534B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242901B2 (en) 1999-06-18 2001-12-25 日本エー・エス・エム株式会社 Semiconductor forming method and apparatus
JP3400756B2 (en) * 1999-09-22 2003-04-28 日本エー・エス・エム株式会社 Method for manufacturing semiconductor device
JP2004210421A (en) * 2002-12-26 2004-07-29 Semiconductor Energy Lab Co Ltd Manufacturing system and method of operating processing apparatus
US8038786B2 (en) 2003-03-17 2011-10-18 Hae-Wook Lee Composition for cutting off heat-ray, film formed therefrom, and method for forming the composition and the film
US7611995B2 (en) * 2003-04-22 2009-11-03 Tokyo Electron Limited Method for removing silicon oxide film and processing apparatus
JP4744175B2 (en) * 2005-03-31 2011-08-10 東京エレクトロン株式会社 Substrate processing equipment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4877757A (en) * 1987-07-16 1989-10-31 Texas Instruments Incorporated Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
US4890780A (en) * 1984-11-22 1990-01-02 Hitachi, Ltd. Manufacturing apparatus
EP0626724A1 (en) * 1992-12-14 1994-11-30 Ebara Corporation System for transferring wafer
US5429642A (en) * 1992-09-08 1995-07-04 Fujitsu Limited Method for transferring wafers from one processing station to another sequentially and system therefor
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
EP0736895A1 (en) * 1995-04-06 1996-10-09 Motorola, Inc. Modular cleanroom conduit and method for its use

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02222518A (en) * 1989-02-23 1990-09-05 Nec Corp Manufacture of semiconductor device
JP2809038B2 (en) * 1992-03-25 1998-10-08 松下電器産業株式会社 Environmental control device and environmental control method
JPH06151763A (en) * 1992-10-30 1994-05-31 Nec Corp Manufacture of semiconductor device
JPH07226382A (en) * 1994-02-10 1995-08-22 Tokyo Electron Ltd Heat treatment equipment
JP3519212B2 (en) * 1995-06-13 2004-04-12 高砂熱学工業株式会社 Clean material storage
US5634974A (en) * 1995-11-03 1997-06-03 Micron Technologies, Inc. Method for forming hemispherical grained silicon

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890780A (en) * 1984-11-22 1990-01-02 Hitachi, Ltd. Manufacturing apparatus
US4877757A (en) * 1987-07-16 1989-10-31 Texas Instruments Incorporated Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma
US5429642A (en) * 1992-09-08 1995-07-04 Fujitsu Limited Method for transferring wafers from one processing station to another sequentially and system therefor
EP0626724A1 (en) * 1992-12-14 1994-11-30 Ebara Corporation System for transferring wafer
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
EP0736895A1 (en) * 1995-04-06 1996-10-09 Motorola, Inc. Modular cleanroom conduit and method for its use

Also Published As

Publication number Publication date
JPH1140770A (en) 1999-02-12
US6143619A (en) 2000-11-07
CN1207579A (en) 1999-02-10
KR19990013946A (en) 1999-02-25
GB9815387D0 (en) 1998-09-16
GB2327534A (en) 1999-01-27
KR100304136B1 (en) 2001-10-19

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040715