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GB2326648B - Growth method of polycrystal silicon film - Google Patents

Growth method of polycrystal silicon film

Info

Publication number
GB2326648B
GB2326648B GB9812887A GB9812887A GB2326648B GB 2326648 B GB2326648 B GB 2326648B GB 9812887 A GB9812887 A GB 9812887A GB 9812887 A GB9812887 A GB 9812887A GB 2326648 B GB2326648 B GB 2326648B
Authority
GB
United Kingdom
Prior art keywords
silicon film
growth method
polycrystal silicon
polycrystal
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9812887A
Other versions
GB2326648A (en
GB9812887D0 (en
Inventor
Akio Tanikawa
Taishi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to GB9911077A priority Critical patent/GB2335929B/en
Publication of GB9812887D0 publication Critical patent/GB9812887D0/en
Publication of GB2326648A publication Critical patent/GB2326648A/en
Application granted granted Critical
Publication of GB2326648B publication Critical patent/GB2326648B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
GB9812887A 1997-06-24 1998-06-15 Growth method of polycrystal silicon film Expired - Fee Related GB2326648B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9911077A GB2335929B (en) 1997-06-24 1998-06-15 Apparatus for depositing a thin film on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9167521A JPH1116838A (en) 1997-06-24 1997-06-24 Growth of polycrystalline silicon film and cvd apparatus

Publications (3)

Publication Number Publication Date
GB9812887D0 GB9812887D0 (en) 1998-08-12
GB2326648A GB2326648A (en) 1998-12-30
GB2326648B true GB2326648B (en) 1999-09-22

Family

ID=15851244

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9812887A Expired - Fee Related GB2326648B (en) 1997-06-24 1998-06-15 Growth method of polycrystal silicon film

Country Status (3)

Country Link
JP (1) JPH1116838A (en)
KR (1) KR19990006994A (en)
GB (1) GB2326648B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653474A (en) * 2020-05-19 2020-09-11 上海华虹宏力半导体制造有限公司 Polysilicon thin film formation method

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001061736A1 (en) * 2000-02-18 2001-08-23 Tokyo Electron Limited Method of processing wafer
DE60324300D1 (en) * 2003-03-05 2008-12-04 Fujitsu Ltd Magnetic recording medium and method for its production
CN103820767B (en) * 2013-12-27 2016-04-06 中国科学院上海微系统与信息技术研究所 A kind of pre-treating technology improving polysilicon membrane quality
CN114743974A (en) * 2021-01-07 2022-07-12 中国科学院微电子研究所 Deposition method of polysilicon and manufacturing method of contact plug

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
GB2093271A (en) * 1981-02-13 1982-08-25 Rca Corp Fabricating amorphous silicon solar cells
US4551352A (en) * 1985-01-17 1985-11-05 Rca Corporation Method of making P-type hydrogenated amorphous silicon
EP0262980A2 (en) * 1986-10-03 1988-04-06 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
US4786615A (en) * 1987-08-31 1988-11-22 Motorola Inc. Method for improved surface planarity in selective epitaxial silicon
EP0320970A2 (en) * 1987-12-18 1989-06-21 Kabushiki Kaisha Toshiba Vapour-phase epitaxial growth process
EP0386676A2 (en) * 1989-03-08 1990-09-12 Fujitsu Limited Semiconductor growth process and apparatus therefore
EP0393869A1 (en) * 1989-03-31 1990-10-24 Canon Kabushiki Kaisha Process for forming deposition film
US5438019A (en) * 1994-07-11 1995-08-01 Micron Semiconductor, Inc. Large area thin film growing method
US5561087A (en) * 1993-05-10 1996-10-01 Kabushiki Kaisha Toshiba Method of forming a uniform thin film by cooling wafers during CVD
EP0762484A1 (en) * 1995-08-31 1997-03-12 Texas Instruments Incorporated Method of forming an epitaxial layer with minimal autodoping

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
GB2093271A (en) * 1981-02-13 1982-08-25 Rca Corp Fabricating amorphous silicon solar cells
US4551352A (en) * 1985-01-17 1985-11-05 Rca Corporation Method of making P-type hydrogenated amorphous silicon
EP0262980A2 (en) * 1986-10-03 1988-04-06 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of dihalosilanes
US4786615A (en) * 1987-08-31 1988-11-22 Motorola Inc. Method for improved surface planarity in selective epitaxial silicon
EP0320970A2 (en) * 1987-12-18 1989-06-21 Kabushiki Kaisha Toshiba Vapour-phase epitaxial growth process
EP0386676A2 (en) * 1989-03-08 1990-09-12 Fujitsu Limited Semiconductor growth process and apparatus therefore
EP0393869A1 (en) * 1989-03-31 1990-10-24 Canon Kabushiki Kaisha Process for forming deposition film
US5561087A (en) * 1993-05-10 1996-10-01 Kabushiki Kaisha Toshiba Method of forming a uniform thin film by cooling wafers during CVD
US5438019A (en) * 1994-07-11 1995-08-01 Micron Semiconductor, Inc. Large area thin film growing method
EP0762484A1 (en) * 1995-08-31 1997-03-12 Texas Instruments Incorporated Method of forming an epitaxial layer with minimal autodoping

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111653474A (en) * 2020-05-19 2020-09-11 上海华虹宏力半导体制造有限公司 Polysilicon thin film formation method

Also Published As

Publication number Publication date
KR19990006994A (en) 1999-01-25
GB2326648A (en) 1998-12-30
GB9812887D0 (en) 1998-08-12
JPH1116838A (en) 1999-01-22

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020615