GB2315594A - Sensing device comprising coplanar light emitter and detectors - Google Patents
Sensing device comprising coplanar light emitter and detectors Download PDFInfo
- Publication number
- GB2315594A GB2315594A GB9615319A GB9615319A GB2315594A GB 2315594 A GB2315594 A GB 2315594A GB 9615319 A GB9615319 A GB 9615319A GB 9615319 A GB9615319 A GB 9615319A GB 2315594 A GB2315594 A GB 2315594A
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- United Kingdom
- Prior art keywords
- sensing
- light emitting
- sensing device
- light
- organic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920000642 polymer Polymers 0.000 claims abstract description 28
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims abstract description 10
- -1 polyphenylene vinylene Polymers 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 44
- 239000012044 organic layer Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 6
- 229920000547 conjugated polymer Polymers 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Light Receiving Elements (AREA)
Abstract
A unitary sensing device is provided which has light emitting regions P2, P4 in the same plane as an array of light detecting regions P1, P3, P5. The light emitters and detectors are formed between electrodes 4, 8 in regions of an electroluminous semiconductor polymer layer 6, preferably polyphenylene vinylene (PPV). The light emitting region may be provided as a continuous strip adjacent a strip of the sensing elements. A variety of operating circuitry is described.
Description
SENSING DEVICE
This invention relates to a sensing device and particularly to a sensing device comprising a single unit. The sensing device is particularly but not exclusively for scanning data from a surface by detecting light reflection from the surface.
Traditionally, such scanning devices have used bulk optic systems to image reflected light from the scanned object onto a charge coupled device (CCD). Charge coupled devices can be designed to have good sensitivities and scanning speeds.
However, they are bulky. In many situations, the sensitivity and/or scanning speed is not a significant issue due to speed bottlenecks in other parts of the system, for example the telephone line band within a fax s canner, but instead the size of the scanning device is a more significant issue, particularly for portable systems.
More recently, a sensing device has been manufactured using a detector array defined in amorphous silicon and using contact coupling to the scanned image. Such a thin film contact image sensor is manufactured by Kyocera. In these sensing devices, a light source in the form of an array of light emitting diodes passes through the amorphous silicon layer defining the detection regions.
According to one aspect of the invention there is provided a unitary sensing device comprising:
a plurality of sensing elements defined in a sensing region of an organic layer, each sensing element being responsive to light reflected from an object to be sensed to generate a respective sensing signal; and
a light source comprising a light emitting region defined in an organic layer arranged in the same plane as said sensing region and between first and second electrodes, said light emitting region being operable to emit light when a potential difference is applied between the first and second electrodes.
A particularly suitable organic layer for defining the light emitting regions is a semiconductive conjugated polymer such as polyphenylene vinylene (PPV) or its derivatives. A semiconductive conjugated polymer layer can also be used as the layer for defining the sensing region. Another possibility is to use a light emitting organic molecular film such as described for example in C.W. Tang, S.A. Van Slyke and
C.H. Chen, J. Appl. Physics 65, 3610 (1989).
The same polymer layer can be used to provide the sensing layer and the light emitting polymer layer. In one embodiment, a polymer layer is arranged between the first and second electrodes and provides interleaved sensing elements and light emitting elements. The arrangement of the first and second electrodes can be such that electrical connections can be made separately to the sensing elements and the light emitting elements so that they can be separately actuated.
For example, an electric field may be required across the light emitting regions to cause them to emit light but the sensing elements may operate with no electric field applied to generate a sensing signal in response to light incident thereon. In that case, the sensing elements would merely be connected to sensing circuitry for receiving the sensing signals.
In another example, the light emitting elements have a voltage of one polarity applied across them and the sensing elements have a voltage of the opposite polarity applied across them.
In an alternative embodiment, the sensing elements and light emitting elements are arranged between the first and second electrodes and subject to the same potential. For this embodiment, the polymer is selected so that it has photoconductive qualities which lead to an increase in current flowing in the presence of incident light, this increase in current providing the sensing signal.
In an alternative embodiment, the light emitting polymer layer can be provided as a continuous strip adjacent a polymer strip defining a plurality of sensing elements.
Different polymer layers can be used to provide the light emitting polymer layer and the sensing layer.
The invention thus provides a unitary sensing device which may have a variety of different structures and which provides a device which is reduced in size and complexity by provision of the light source in the same plane as the detector array.
Furthermore, there is an improvement in coupling efficiency because of the proximity of the source and scanned object.
For a better understanding of the present invention and to show how the same may be carried into effect reference will now be made by way of example to the accompanying drawings in which:
Figure 1 is a view from the side of one embodiment of a sensing device;
Figure la is a sketch of a suitable sensing circuit;
Figure 2 is a view from above of the sensing device of
Figure 1;
Figure 3 is a view from above of a second embodiment of the sensing device;
Figure 4 is a view from above of a third embodiment of the sensing device; and
Figure 5 is a view from above of a fourth embodiment of a sensing device.
Reference will first be made to Figure 1 to describe one embodiment of a sensing device. The sensing device comprises a transparent substrate 2, for example glass, which is coated with indium tin oxide (ITO) to constitute a first electrode layer 4. In the embodiment of Figure 1, the layer of indium tin oxide extends over the whole region of the substrate 2 defining the sensing device. A polymer layer 6 is deposited on the indium tin oxide layer 4. The polymer layer 6 is preferably a semiconductive conjugated polymer, for example polyphenylene vinylene (PPV) or its derivatives. On the polymer layer 6 are defined respective electrodes 8 which are formed by separate regions of aluminium. The aluminium regions 8 define pixels in the polymer layer 6 below them.
The polymer layer selected for use in this invention has the property of emitting light when an electric field is applied between the aluminium electrodes 8 and the ITO electrode 4.
These electroluminescent qualities are discussed in detail in our earlier patent US-5247190, the contents of which are herein incorporated by reference. Application of an electric field between the two electrodes 4,8 on either side of the polymer layer 6 cause charge carriers of opposite types to be injected into the polymer layer. These charge carriers recombine and decay radiatively causing light to be emitted.
Electrodes other than indium tin oxide and aluminium can be used, provided that the work functions of the electrodes are selected to allow injection of charge carriers of opposite types into the polymer layer. The polymer layer 6 can comprise more than one layer of polymer, for example a charge transport layer and a light emitting layer used adjacent one another.
The electrodes 8 each define respective pixels 10 in the polymer layer 6. In Figure 1, only five pixels are shown but it will readily be appreciated that a large number of such pixels will be present. In the embodiment of Figure 1, these pixels are divided into two sets, a sensing set and a light emitting set. For ease of reference the pixels 10 are labelled P1 through PS. Pixels P2 and P4 act as light emitting elements. To this end, a potential difference Ve is applied between the electrode layer 4 and the electrodes 8 associated with these pixels. When the potential difference V is applied, light is emitted from these pixels. This is
e denoted Le in Figure 1, shown emitted only from pixel P4.
Generally, the light emitting pixels will all be actuated together and thus will all emit light together.
Pixels P1, P3 and P5 constitute sensing elements. These sensing elements detect light reflected from the object, marked L r in Figure 1 and generate a respective sensing signal which is detected by a respective sensing circuit 12.
To allow this sensing to occur, the sensing elements P1, P3 and P5 are connected to a voltage Vd having an opposite polarity to Ve This effectively causes the polymer material defining the sensing element to act as a photoconductor and to become more conductive when light is incident thereon. Each sensing circuit 12 senses this increase in current.
Figure la is a sketch of a simple sensing circuit which can be used to provide a sensing signal. The sensing circuit 12 comprises a known resistance R and a voltage meter 30. The voltage meter 30 detects a voltage across the known resistance
R, from which the current I flowing through the resistance R can be determined. When there is no light present, the measured voltage V equals i1R. When light is incident, the measured voltage V equals i2R.
i2 - 11 gives an indication of the reflected light intensity.
For a sensing element under forward bias, the following inequality is satisfied: . . .
12 - 11 1 1 For a sensing element under reverse bias, i1 is approximately equal to zero and therefore i2 gives an indication of the reflected light intensity.
The spacing between the sensing device and the surface of the object being scanned is optimal when the light emitted from adjacent light emitting elements just overlaps at the scanned surface. With this geometry, light from any particular point on the surface will be reflected to reach only one sensing element, and the resolution will be maximised.
Figure 2 is a plan view from above of the sensing device of
Figure 1. It will be appreciated from these figures that the sensing elements and light emitting elements are interleaved along the line of a sensing array.
An alternative embodiment is shown in Figure 3. In this embodiment, the right hand side of Figure 3 has a construction similar to that described above with reference to Figure 1 but differing in that all of the electrodes 8 are connected to the voltage Vd to define them as sensing elements. Light is emitted from a separate light emitting region, shown on the left of Figure 3. This light emitting region has a construction similar to that shown in Figure 1 except that there is a continuous aluminium electrode 8' which extends the full length of the sensing arrangement defined by the electrodes 8. The voltage Ve is connected between the electrode 8' and the electrode 4. As shown in Figure 3, the sensing elements and light emitting region are defined in different polymer layers labelled 6 and 6' respectively. In that case, the emission wavelength of the polymer layer 6' constituting the light emitting region can be matched to the absorption maximum of the polymer material constituting the polymer layer 6 of the sensing elements. This can be achieved by the use of PPV as the emitter and a cyano derivative of PPV (poly(cyanoterephthalylidene) as the sensing layer.
Poly(cyanoterephthalylidene has been reported in "Efficient light-emitting diodes based on polymers with high electron affinities" by N.C. Greenham et al in Nature, vol 365, pages 628-630.
The sensing elements and light emitting region could however be formed in the same polymer layer or in two different polymer layers of the same polymer material. The proximity of the light emitting region to the region defining the sensing elements is such that reflected light from the object being scanned is efficiently captured by the sensing array, with light from any point on the scanned surface being predominantly incident on only one sensing element.
In a still further embodiment, shown in Figure 4, a sensing array has a construction as shown in Figure 1 but with a common voltage V applied between each of the electrode regions 8 and the electrode 4. Each of the pixels thus formed acts as a light emitting element and as a sensing element. Light emission occurs as described earlier with reference to Figure 1 when the voltage V is applied. Sensing occurs by monitoring the reduction in forward bias voltage which is the result of light incident on a pixel. This reduction is monitored by respective sensing circuits 12', one being connected to each pixel. The photoconductivity of the polymer layer leads to a reduction in resistance in the presence of reflected light which for a given injection current will result in a reduced forward bias voltage. Therefore, each sensing circuit 12' is arranged to inject a constant current and to monitor the changes in forward bias voltage. Alternatively, if the pixels are driven at a constant voltage, the change in current due to detected light can be detected by the sensing circuits 12', as described above with reference to Figure 1.
The above-described sensing devices can be used as a proximity contact switch. An object such as a finger or pen brought close to the sensing device will reflect emitted light back into the sensing device and cause a change in the voltage or current across the device. These changes can be used to activate a switch (for example to determine which button has been pressed in an elevator) or to provide positioning information in a display (for example for pen-based input).
Alternatively, a light pen can be used to provide positioning information in a display, wherein the input light directly causes a change in the voltage or current across a sensing device. Alternatively, the sensing device can be used to change the brightness or light output of a device, depending on the surrounding ambient light. Thus, a display can be made brighter in a bright room, or dimmed in a darker room.
The sensing device can also be used to replace existing CCD and other scanning devices to input data by scanning a surface having light and dark patches representing the data. Thus, it can be used as a text reader in a fax or digital copier.
In the embodiments of Figures 1 to 4, only a small number of pixels is illustrated to simplify the diagrams and to make them clearer. In practice a large number of pixels will be included in a sensing device. A wire connection to each aluminium electrode is required to connect the pixel to its appropriate voltage and/or sensing circuitry. As the pixels will be small, it can be difficult to provide the required connections. One way of reducing the number of connections required from external circuitry to the sensing device is illustrated diagrammatically in Figure 5. Instead of the indium tin oxide layer 4 being continuous on the substrate, a plurality of distinct regions are formed, denoted 4a, 4b and 4c in Figure 5. For example there could be ten such regions.
On each region, a number of electrode regions is formed according to the construction of Figure 1, for example there might be ten electrode regions for each region of the electrode layer 4. Pixels defined in the first region 4a are each respectively connected to sensing circuits of the type discussed above and which are indicated generally by the block 20 in Figure 5. Each pixel in the first region 4a is connected to a pixel in each of the other regions 4b, 4c. Not all of these connections are shown in Figure 5 for the sake of clarity. Each region of the indium tin oxide layer 4 can be individually addressed through a switch circuit 22. This thus allows the selection to be made between the pixels which are connected together but overlying different regions of the electrode layer.
In one embodiment, there are ten regions in the electrode layer 4 and ten pixels in each region. The regions in the electrode layer 4 are sequentially addressed through application of a selection voltage to the electrode 4 and an appropriate voltage to the electrode region 8 of the individual pixels within each sub-array. The sensing signal for individual pixels is sequentially monitored by one of ten switching circuits in the block 20. Thus, only twenty external connections are required, ten for the selection of the regions in the electrode layer 4 and ten for the pixels overlying each region. Furthermore, only ten external sensing circuits are required.
Claims (10)
1. A unitary sensing device comprising:
a plurality of sensing elements defined in a sensing region of an organic layer, each sensing element being responsive to light reflected from an object to be sensed to generate a respective sensing signal; and
a light source comprising a light emitting region defined in an organic layer arranged in the same plane as said sensing region and between first and second electrodes, said light emitting region being operable to emit light when a potential difference is applied between the first and second electrodes.
2. A sensing device according to claim 1, wherein the organic layer in which the light emitting regions are defined is a semiconductive conjugated polymer such as polyphenylene vinylene (PPV) or its derivatives.
3. A sensing device according to claim 1 or 2, wherein the organic layer for defining the sensing region comprises a semiconductive conjugated polymer.
4. A sensing device according to claim 1, 2 or 3, wherein a common organic layer provides the sensing layer and the light emitting polymer layer.
5. A sensing device according to claim 4, wherein the organic layer is arranged between the first and second electrodes and provides interleaved sensing elements and light emitting elements, the arrangement of the first and second electrodes can be such that electrical connections can be made separately to the sensing elements and the light emitting elements so that they can be separately actuated.
6. A sensing device according to claim 5, which comprises means for applying an electric field across the light emitting regions to cause them to emit light wherein the sensing elements operate with no electric field applied.
7. A sensing device according to claim 5, which comprises means for applying a voltage of one polarity applied across the light emitting elements and a voltage of the opposite polarity across the sensing elements.
8. A sensing device according to claim 4, wherein the sensing elements and light emitting regions are arranged between the first and second electrodes and subject to the same potential, the organic layer having been selected so that it has photoconductive qualities which lead to an increase in current flowing in the presence of incident light, this increase in current providing the sensing signal.
9. A sensing device according to claim 1, 2 or 3, wherein the organic layer in which the light emitting regions are defined is provided as a continuous strip adjacent a strip of the organic layer defining the sensing elements.
10. A sensing device substantially as hereinbefore described with reference to and as shown in the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9615319A GB2315594B (en) | 1996-07-22 | 1996-07-22 | Sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9615319A GB2315594B (en) | 1996-07-22 | 1996-07-22 | Sensing device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9615319D0 GB9615319D0 (en) | 1996-09-04 |
| GB2315594A true GB2315594A (en) | 1998-02-04 |
| GB2315594B GB2315594B (en) | 2000-08-16 |
Family
ID=10797280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9615319A Expired - Fee Related GB2315594B (en) | 1996-07-22 | 1996-07-22 | Sensing device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2315594B (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000063654A1 (en) * | 1999-04-21 | 2000-10-26 | Dr. Johannes Heidenhain Gmbh | Integrated optoelectronic thin-film sensor and method of producing same |
| GB2369428A (en) * | 2000-11-22 | 2002-05-29 | Imperial College | Micro total chemical analysis system with integrated fluid sample channels and organic semiconductor light emitters and detectors |
| WO2003061008A1 (en) * | 2002-01-17 | 2003-07-24 | Koninklijke Philips Electronics N.V. | Scanning display |
| US6670213B2 (en) | 2001-10-10 | 2003-12-30 | Cambridge Display Technology Limited | Method of preparing photoresponsive devices, and devices made thereby |
| EP1376697A1 (en) * | 2002-06-17 | 2004-01-02 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Integrated-optical microsystem based on organic semiconductors |
| EP1467224A1 (en) | 2003-04-07 | 2004-10-13 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Optical proximity detector |
| EP1377020A3 (en) * | 2002-06-24 | 2005-07-27 | Siemens Aktiengesellschaft | Flexible page scanner |
| EP1569280A3 (en) * | 1998-09-04 | 2006-06-07 | Seiko Epson Corporation | Device having light transmission means |
| US7348428B2 (en) | 2001-10-25 | 2008-03-25 | Cambridge Display Technology Limited | Triarylamine containing monomers for optoelectronic devices |
| WO2007137931A3 (en) * | 2006-05-30 | 2008-04-10 | Siemens Ag | Photoelectric barrier |
| WO2008152027A1 (en) * | 2007-06-14 | 2008-12-18 | Siemens Aktiengesellschaft | Actuator |
| WO2009035324A1 (en) | 2007-09-10 | 2009-03-19 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Optical sensor for measuring a force distribution |
| WO2009040429A1 (en) * | 2007-09-28 | 2009-04-02 | Cambridge Display Technology Limited | Optoelectronic devices |
| US7745817B2 (en) | 2002-07-03 | 2010-06-29 | Cambridge Display Technology Limited | Combined information display and information input device |
| WO2011038968A1 (en) * | 2009-10-01 | 2011-04-07 | Robert Bosch Gmbh | Sensor device and use thereof |
| US7924272B2 (en) | 2006-11-27 | 2011-04-12 | Microsoft Corporation | Infrared sensor integrated in a touch panel |
| US8094129B2 (en) | 2006-11-27 | 2012-01-10 | Microsoft Corporation | Touch sensing using shadow and reflective modes |
| US8269746B2 (en) | 2006-11-27 | 2012-09-18 | Microsoft Corporation | Communication with a touch screen |
| CN101529212B (en) * | 2006-10-28 | 2013-08-28 | 瑞尼斯豪公司 | Opto electronic read head |
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| EP0517626A1 (en) * | 1991-06-07 | 1992-12-09 | Eastman Kodak Company | Integrated light emitting and light detecting device |
| US5247190A (en) * | 1989-04-20 | 1993-09-21 | Cambridge Research And Innovation Limited | Electroluminescent devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855974A (en) * | 1994-08-12 | 1996-02-27 | Tdk Corp | Full contact image sensor and organic electroluminescence element |
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1996
- 1996-07-22 GB GB9615319A patent/GB2315594B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2124051A (en) * | 1982-06-30 | 1984-02-08 | Eastman Kodak Co | Devices and methods for determining distances to radiation reflective objects |
| US5247190A (en) * | 1989-04-20 | 1993-09-21 | Cambridge Research And Innovation Limited | Electroluminescent devices |
| EP0517626A1 (en) * | 1991-06-07 | 1992-12-09 | Eastman Kodak Company | Integrated light emitting and light detecting device |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1569280A3 (en) * | 1998-09-04 | 2006-06-07 | Seiko Epson Corporation | Device having light transmission means |
| US6621104B1 (en) | 1999-04-21 | 2003-09-16 | Dr. Johannes Heidenhain Gmbh | Integrated optoelectronic thin-film sensor and method of producing same |
| WO2000063654A1 (en) * | 1999-04-21 | 2000-10-26 | Dr. Johannes Heidenhain Gmbh | Integrated optoelectronic thin-film sensor and method of producing same |
| GB2369428A (en) * | 2000-11-22 | 2002-05-29 | Imperial College | Micro total chemical analysis system with integrated fluid sample channels and organic semiconductor light emitters and detectors |
| GB2369428B (en) * | 2000-11-22 | 2004-11-10 | Imperial College | Detection system |
| US6670213B2 (en) | 2001-10-10 | 2003-12-30 | Cambridge Display Technology Limited | Method of preparing photoresponsive devices, and devices made thereby |
| US6872970B2 (en) | 2001-10-10 | 2005-03-29 | Cambridge Display Technology Limited | Photoresponsive devices |
| US7348428B2 (en) | 2001-10-25 | 2008-03-25 | Cambridge Display Technology Limited | Triarylamine containing monomers for optoelectronic devices |
| CN100341151C (en) * | 2002-01-17 | 2007-10-03 | 皇家飞利浦电子股份有限公司 | Scanning display |
| WO2003061008A1 (en) * | 2002-01-17 | 2003-07-24 | Koninklijke Philips Electronics N.V. | Scanning display |
| EP1376697A1 (en) * | 2002-06-17 | 2004-01-02 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Integrated-optical microsystem based on organic semiconductors |
| US7038235B2 (en) | 2002-06-17 | 2006-05-02 | Csem Centre Suisse D'electronique Et De Microtechnique Sa | Integrated-optical microsystem based on organic semiconductors |
| EP1377020A3 (en) * | 2002-06-24 | 2005-07-27 | Siemens Aktiengesellschaft | Flexible page scanner |
| US7745817B2 (en) | 2002-07-03 | 2010-06-29 | Cambridge Display Technology Limited | Combined information display and information input device |
| EP1467224A1 (en) | 2003-04-07 | 2004-10-13 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Optical proximity detector |
| WO2007137931A3 (en) * | 2006-05-30 | 2008-04-10 | Siemens Ag | Photoelectric barrier |
| CN101529212B (en) * | 2006-10-28 | 2013-08-28 | 瑞尼斯豪公司 | Opto electronic read head |
| US8411070B2 (en) | 2006-11-27 | 2013-04-02 | Microsoft Corporation | Infrared sensor integrated in a touch panel |
| US7924272B2 (en) | 2006-11-27 | 2011-04-12 | Microsoft Corporation | Infrared sensor integrated in a touch panel |
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Also Published As
| Publication number | Publication date |
|---|---|
| GB2315594B (en) | 2000-08-16 |
| GB9615319D0 (en) | 1996-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20150722 |