GB2308739B - Semiconductor device and a manufacturing method for the same - Google Patents

Semiconductor device and a manufacturing method for the same

Info

Publication number: GB2308739B
Authority: GB; United Kingdom
Prior art keywords: manufacturing; same; semiconductor device; semiconductor
Prior art date: 1995-12-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB9626975A

Other versions

GB2308739A (en

GB9626975D0 (en

GB2308739A8 (en

Inventor

Jae Kap Kim

Yo-Hwan Koh

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

Original Assignee

Hyundai Electronics Industries Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-12-29

Filing date

1996-12-27

Publication date

2000-06-28

1996-12-27 Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd

1997-02-12 Publication of GB9626975D0 publication Critical patent/GB9626975D0/en

1997-07-02 Publication of GB2308739A publication Critical patent/GB2308739A/en

1998-01-22 Publication of GB2308739A8 publication Critical patent/GB2308739A8/en

2000-06-28 Application granted granted Critical

2000-06-28 Publication of GB2308739B publication Critical patent/GB2308739B/en

2016-12-27 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10P14/6304—
- H10P14/6322—
- H10P90/1906—
- H10W10/061—
- H10W10/181—
- H10P90/1914—
- H10W10/012—
- H10W10/13—

GB9626975A 1995-12-29 1996-12-27 Semiconductor device and a manufacturing method for the same Expired - Fee Related GB2308739B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019950066069A KR100197656B1 (en)	1995-12-29	1995-12-29	Manufacturing Method of Semiconductor S.I.I.Device

Publications (4)

Publication Number	Publication Date
GB9626975D0 GB9626975D0 (en)	1997-02-12
GB2308739A GB2308739A (en)	1997-07-02
GB2308739A8 GB2308739A8 (en)	1998-01-22
GB2308739B true GB2308739B (en)	2000-06-28

Family

ID=19447237

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9626975A Expired - Fee Related GB2308739B (en)	1995-12-29	1996-12-27	Semiconductor device and a manufacturing method for the same

Country Status (4)

Country	Link
JP (1)	JP2936536B2 (en)
KR (1)	KR100197656B1 (en)
DE (1)	DE19654711C2 (en)
GB (1)	GB2308739B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4054557B2 (en) *	2001-10-10	2008-02-27	沖電気工業株式会社	Manufacturing method of semiconductor device
JP4139105B2 (en)	2001-12-20	2008-08-27	株式会社ルネサステクノロジ	Manufacturing method of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3752711A (en) *	1970-06-04	1973-08-14	Philips Corp	Method of manufacturing an igfet and the product thereof
WO1983003709A1 (en) *	1982-04-05	1983-10-27	Western Electric Co	Process for forming complementary integrated circuit devices
WO1985001613A1 (en) *	1983-09-30	1985-04-11	Hughes Aircraft Company	High density mosfet with field oxide aligned channel stops and method of fabricating the same
EP0208356A1 (en) *	1985-06-14	1987-01-14	Koninklijke Philips Electronics N.V.	Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper

1995
- 1995-12-29 KR KR1019950066069A patent/KR100197656B1/en not_active Expired - Fee Related
1996
- 1996-12-27 JP JP8358680A patent/JP2936536B2/en not_active Expired - Fee Related
- 1996-12-27 GB GB9626975A patent/GB2308739B/en not_active Expired - Fee Related
- 1996-12-30 DE DE19654711A patent/DE19654711C2/en not_active Expired - Fee Related

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3752711A (en) *	1970-06-04	1973-08-14	Philips Corp	Method of manufacturing an igfet and the product thereof
WO1983003709A1 (en) *	1982-04-05	1983-10-27	Western Electric Co	Process for forming complementary integrated circuit devices
WO1985001613A1 (en) *	1983-09-30	1985-04-11	Hughes Aircraft Company	High density mosfet with field oxide aligned channel stops and method of fabricating the same
EP0208356A1 (en) *	1985-06-14	1987-01-14	Koninklijke Philips Electronics N.V.	Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, Vol.12,Number38(E580),page53 and JP 62 0190878. *
Patent Abstracts of Japan,Vol.12,Number308(E647)page136 and JP 63 0076379 *

Also Published As

Publication number	Publication date
DE19654711C2 (en)	2003-05-22
GB2308739A (en)	1997-07-02
DE19654711A1 (en)	1997-07-03
JP2936536B2 (en)	1999-08-23
KR100197656B1 (en)	1999-07-01
KR970054268A (en)	1997-07-31
JPH1012894A (en)	1998-01-16
GB9626975D0 (en)	1997-02-12
GB2308739A8 (en)	1998-01-22

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Legal Events

Date	Code	Title	Description
1998-02-18	713C	Proceeding under section 13(3) of the patents act 1977
1998-02-18	713F	Application for mention of inventor (sect. 13(1)/1977) allowed
2010-08-25	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20091227