GB2302975B - An sram device with a bit line - Google Patents

An sram device with a bit line

Info

Publication number: GB2302975B
Authority: GB; United Kingdom
Prior art keywords: bit line; sram device; sram; bit; line
Prior art date: 1995-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB9613788A

Other versions

GB9613788D0 (en

GB2302975A (en

Inventor

Seung Min Kim

Hoon Mo Yoon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SK Hynix Inc

Original Assignee

Hyundai Electronics Industries Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-06-30

Filing date

1996-07-01

Publication date

1999-11-17

1996-07-01 Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd

1996-09-04 Publication of GB9613788D0 publication Critical patent/GB9613788D0/en

1997-02-05 Publication of GB2302975A publication Critical patent/GB2302975A/en

1999-11-17 Application granted granted Critical

1999-11-17 Publication of GB2302975B publication Critical patent/GB2302975B/en

2016-07-01 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)

GB9613788A 1995-06-30 1996-07-01 An sram device with a bit line Expired - Fee Related GB2302975B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019950019168A KR0147712B1 (en)	1995-06-30	1995-06-30	Bit line circuit for low voltage operating of sram

Publications (3)

Publication Number	Publication Date
GB9613788D0 GB9613788D0 (en)	1996-09-04
GB2302975A GB2302975A (en)	1997-02-05
GB2302975B true GB2302975B (en)	1999-11-17

Family

ID=19419518

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9613788A Expired - Fee Related GB2302975B (en)	1995-06-30	1996-07-01	An sram device with a bit line

Country Status (3)

Country	Link
US (1)	US5684745A (en)
KR (1)	KR0147712B1 (en)
GB (1)	GB2302975B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100206411B1 (en) *	1996-06-27	1999-07-01	김영환	Semiconductor memory device for reducing static current
JP2944538B2 (en) *	1996-10-24	1999-09-06	日本電気アイシーマイコンシステム株式会社	Semiconductor memory circuit
US6061276A (en)	1997-02-07	2000-05-09	Fujitsu Limited	Semiconductor memory device and a semiconductor integrated circuit
GB2338808B (en) *	1998-06-23	2002-02-27	Mitel Semiconductor Ltd	Semiconductor memories
JP2002298586A (en) *	2001-04-02	2002-10-11	Nec Corp	Data write-in method for semiconductor memory, and semiconductor memory
KR100416803B1 (en) *	2002-05-06	2004-01-31	삼성전자주식회사	Semiconductor memory device and precharge method thereof
KR100604902B1 (en) *	2004-09-24	2006-07-28	삼성전자주식회사	Data readout circuit and data read control method of SRAM for LC reducing chip size
US7085178B1 (en) *	2005-01-27	2006-08-01	Sun Microsystems, Inc.	Low-power memory write circuits
KR102328254B1 (en)	2017-11-08	2021-11-18	주식회사 엘지에너지솔루션	Cathode for lithium-sulfur battery comprising maghemite, and lithium-sulfur battery comprising thereof
KR102845805B1 (en) *	2020-10-15	2025-08-14	에스케이하이닉스 주식회사	Memory cell and semiconductor dedvice with the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2184309A (en) *	1984-02-22	1987-06-17	Intel Corp	Metal-oxide-semiconductor dynamic ram
GB2265034A (en) *	1992-03-13	1993-09-15	Samsung Electronics Co Ltd	Bit line control circuit
US5325331A (en) *	1991-04-04	1994-06-28	Micron Technology, Inc.	Improved device for sensing information store in a dynamic memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR960006283B1 (en) *	1991-08-26	1996-05-13	닛본덴기 가부시끼가이샤	Semiconductor DRAM (DRAM) Devices
KR960013401B1 (en) *	1993-11-09	1996-10-04	김광호	Static random access memory

1995
- 1995-06-30 KR KR1019950019168A patent/KR0147712B1/en not_active Expired - Fee Related
1996
- 1996-07-01 GB GB9613788A patent/GB2302975B/en not_active Expired - Fee Related
- 1996-07-01 US US08/673,487 patent/US5684745A/en not_active Expired - Lifetime

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2184309A (en) *	1984-02-22	1987-06-17	Intel Corp	Metal-oxide-semiconductor dynamic ram
US5325331A (en) *	1991-04-04	1994-06-28	Micron Technology, Inc.	Improved device for sensing information store in a dynamic memory
GB2265034A (en) *	1992-03-13	1993-09-15	Samsung Electronics Co Ltd	Bit line control circuit

Also Published As

Publication number	Publication date
GB9613788D0 (en)	1996-09-04
KR970003246A (en)	1997-01-28
US5684745A (en)	1997-11-04
GB2302975A (en)	1997-02-05
KR0147712B1 (en)	1998-11-02

Publication	Publication Date	Title
GB9515593D0 (en)	1995-09-27	A roll-forged drill bit
GB9319288D0 (en)	1993-11-03	A device
GB2282617B (en)	1996-11-06	A combination well logging device
AU1030497A (en)	1997-06-27	A flushing device
GB2301212B (en)	1999-05-05	A memory device having a hierarchical bit line
AU1817595A (en)	1995-09-11	A data storage device
GB2302975B (en)	1999-11-17	An sram device with a bit line
GB9222858D0 (en)	1992-12-16	A bit
AU5351096A (en)	1996-10-30	Device at a ship
AU7444394A (en)	1995-04-27	A well logging device with a pad
AU6858994A (en)	1994-12-20	A device for core drill
GB9617619D0 (en)	1996-10-02	Device for use with a telephone
GB9402120D0 (en)	1994-03-30	A drilling device
GB2332967B (en)	2002-01-16	SRAM device having a single bit line and a reference voltage generator
GB2283158B (en)	1997-09-24	A pivot device
GB9304211D0 (en)	1993-04-21	A quantom well device
EP0742062A3 (en)	1997-10-01	A tool with mechanically fixable bit
GB9515991D0 (en)	1995-10-04	A device for use with an insert
GB9515295D0 (en)	1995-09-20	Exandable storage device
GB9317945D0 (en)	1993-10-13	A fuel saving device
GB9616901D0 (en)	1996-09-25	A Storage device
GB9402122D0 (en)	1994-03-30	A drilling device
ZA958944B (en)	1996-05-23	A writing device
GB2327911B (en)	2000-11-29	A buoyancy device
GB2307769B (en)	1998-07-08	Data storage device

Legal Events

Date	Code	Title	Description
2014-03-26	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20130701