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GB2300515B - Insulator deposition using focused ion beam - Google Patents

Insulator deposition using focused ion beam

Info

Publication number
GB2300515B
GB2300515B GB9607972A GB9607972A GB2300515B GB 2300515 B GB2300515 B GB 2300515B GB 9607972 A GB9607972 A GB 9607972A GB 9607972 A GB9607972 A GB 9607972A GB 2300515 B GB2300515 B GB 2300515B
Authority
GB
United Kingdom
Prior art keywords
ion beam
focused ion
insulator deposition
insulator
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9607972A
Other versions
GB9607972D0 (en
GB2300515A (en
Inventor
Hongyu Ximen
Michael A Cecere
Douglas Masnaghetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schlumberger Technologies Inc
Original Assignee
Schlumberger Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technologies Inc filed Critical Schlumberger Technologies Inc
Publication of GB9607972D0 publication Critical patent/GB9607972D0/en
Publication of GB2300515A publication Critical patent/GB2300515A/en
Application granted granted Critical
Publication of GB2300515B publication Critical patent/GB2300515B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P14/6922—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H10P14/6686—
    • H10W20/067—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
GB9607972A 1995-05-04 1996-04-17 Insulator deposition using focused ion beam Expired - Lifetime GB2300515B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/434,548 US5700526A (en) 1995-05-04 1995-05-04 Insulator deposition using focused ion beam

Publications (3)

Publication Number Publication Date
GB9607972D0 GB9607972D0 (en) 1996-06-19
GB2300515A GB2300515A (en) 1996-11-06
GB2300515B true GB2300515B (en) 1997-07-09

Family

ID=23724678

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9607972A Expired - Lifetime GB2300515B (en) 1995-05-04 1996-04-17 Insulator deposition using focused ion beam

Country Status (5)

Country Link
US (1) US5700526A (en)
JP (1) JPH09120962A (en)
DE (1) DE19617027A1 (en)
FR (1) FR2733857B1 (en)
GB (1) GB2300515B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747818A (en) * 1996-10-21 1998-05-05 Schlumberger Technologies Inc. Thermoelectric cooling in gas-assisted FIB system
US6171944B1 (en) * 1998-05-07 2001-01-09 Advanced Micro Devices, Inc. Method for bringing up lower level metal nodes of multi-layered integrated circuits for signal acquisition
WO2000065644A1 (en) * 1999-04-21 2000-11-02 Seiko Instruments Inc. Method of mending interconnection and focused ion beam device
DE19934089A1 (en) * 1999-07-19 2001-01-25 Univ Schiller Jena Raising electrical conductivity in multi-component materials e.g. semiconductors and insulators comprises withdrawing a material component from the starting material by particle radiation
US20060051508A1 (en) * 2000-12-28 2006-03-09 Ilan Gavish Focused ion beam deposition
US6492261B2 (en) * 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition
US6638580B2 (en) * 2000-12-29 2003-10-28 Intel Corporation Apparatus and a method for forming an alloy layer over a substrate using an ion beam
US6824655B2 (en) 2001-08-27 2004-11-30 Credence Systems Corporation Process for charged particle beam micro-machining of copper
JP4302933B2 (en) * 2002-04-22 2009-07-29 株式会社日立ハイテクノロジーズ Ion beam filling method and ion beam apparatus
US20070015335A1 (en) * 2003-02-28 2007-01-18 Japan Science And Technology Agency Production method for antenna and production device for antenna
US7060196B2 (en) * 2003-10-03 2006-06-13 Credence Systems Corporation FIB milling of copper over organic dielectrics
US20060199082A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Mask repair
EP2041756B1 (en) * 2006-07-14 2015-05-13 FEI Company A multi-source plasma focused ion beam system
JP4959509B2 (en) * 2007-11-06 2012-06-27 株式会社デンソー Fuel injection valve
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
US8377722B2 (en) 2010-02-10 2013-02-19 International Business Machines Corporation Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing
WO2012031049A2 (en) 2010-08-31 2012-03-08 Fei Company Navigation and sample processing using an ion source containing both low-mass and high-mass species
JP5442572B2 (en) 2010-09-28 2014-03-12 株式会社日立ハイテクサイエンス Charged particle beam apparatus, thin film manufacturing method, defect correcting method, and device manufacturing method
US20130095307A1 (en) * 2011-10-17 2013-04-18 Cella Energy Limited Spacecraft and spacesuit shield

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0199585B1 (en) * 1985-04-23 1990-07-04 Seiko Instruments Inc. Apparatus for depositing electrically conductive and/or electrically insulating material on a workpiece
JPH0763064B2 (en) * 1986-03-31 1995-07-05 株式会社日立製作所 Wiring connection method for IC element
US5273849A (en) * 1987-11-09 1993-12-28 At&T Bell Laboratories Mask repair
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5236547A (en) * 1990-09-25 1993-08-17 Kabushiki Kaisha Toshiba Method of forming a pattern in semiconductor device manufacturing process
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
JP3688726B2 (en) * 1992-07-17 2005-08-31 株式会社東芝 Manufacturing method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus

Also Published As

Publication number Publication date
US5700526A (en) 1997-12-23
GB9607972D0 (en) 1996-06-19
DE19617027A1 (en) 1996-11-07
JPH09120962A (en) 1997-05-06
FR2733857A1 (en) 1996-11-08
GB2300515A (en) 1996-11-06
FR2733857B1 (en) 2001-10-12

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