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GB2399945B - Methods of forming semiconductor structures - Google Patents

Methods of forming semiconductor structures

Info

Publication number
GB2399945B
GB2399945B GB0413750A GB0413750A GB2399945B GB 2399945 B GB2399945 B GB 2399945B GB 0413750 A GB0413750 A GB 0413750A GB 0413750 A GB0413750 A GB 0413750A GB 2399945 B GB2399945 B GB 2399945B
Authority
GB
United Kingdom
Prior art keywords
methods
semiconductor structures
forming semiconductor
forming
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0413750A
Other versions
GB2399945A (en
GB0413750D0 (en
Inventor
Leonard Forbes
Kie Yeung Ahn
Luan C Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/478,975 external-priority patent/US6372618B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of GB0413750D0 publication Critical patent/GB0413750D0/en
Publication of GB2399945A publication Critical patent/GB2399945A/en
Application granted granted Critical
Publication of GB2399945B publication Critical patent/GB2399945B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10D64/0131—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer
GB0413750A 2000-01-06 2001-01-08 Methods of forming semiconductor structures Expired - Fee Related GB2399945B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/478,975 US6372618B2 (en) 2000-01-06 2000-01-06 Methods of forming semiconductor structures
GB0213397A GB2373925B (en) 2000-01-06 2001-01-08 Methods of forming semiconductor structures

Publications (3)

Publication Number Publication Date
GB0413750D0 GB0413750D0 (en) 2004-07-21
GB2399945A GB2399945A (en) 2004-09-29
GB2399945B true GB2399945B (en) 2004-11-17

Family

ID=32929380

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0413750A Expired - Fee Related GB2399945B (en) 2000-01-06 2001-01-08 Methods of forming semiconductor structures

Country Status (1)

Country Link
GB (1) GB2399945B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003375A (en) * 1988-01-21 1991-03-26 Seiko Epson Corporation MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
US5736455A (en) * 1995-12-22 1998-04-07 Micron Technology, Inc. Method for passivating the sidewalls of a tungsten word line

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003375A (en) * 1988-01-21 1991-03-26 Seiko Epson Corporation MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
US5736455A (en) * 1995-12-22 1998-04-07 Micron Technology, Inc. Method for passivating the sidewalls of a tungsten word line

Also Published As

Publication number Publication date
GB2399945A (en) 2004-09-29
GB0413750D0 (en) 2004-07-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20140108