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GB2399350B - Methods of forming tungsten or tungsten containing films - Google Patents

Methods of forming tungsten or tungsten containing films

Info

Publication number
GB2399350B
GB2399350B GB0305544A GB0305544A GB2399350B GB 2399350 B GB2399350 B GB 2399350B GB 0305544 A GB0305544 A GB 0305544A GB 0305544 A GB0305544 A GB 0305544A GB 2399350 B GB2399350 B GB 2399350B
Authority
GB
United Kingdom
Prior art keywords
tungsten
methods
containing films
forming
tungsten containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0305544A
Other versions
GB0305544D0 (en
GB2399350A (en
Inventor
Paul Rich
Stephen Robert Burgess
James Francis O'sullivan
Nicholas Rimmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trikon Technologies Ltd
Original Assignee
Trikon Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Technologies Ltd filed Critical Trikon Technologies Ltd
Priority to GB0305544A priority Critical patent/GB2399350B/en
Publication of GB0305544D0 publication Critical patent/GB0305544D0/en
Priority to DE102004010354A priority patent/DE102004010354A1/en
Priority to JP2004067518A priority patent/JP2004270035A/en
Priority to US10/796,274 priority patent/US20040214417A1/en
Publication of GB2399350A publication Critical patent/GB2399350A/en
Application granted granted Critical
Publication of GB2399350B publication Critical patent/GB2399350B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
GB0305544A 2003-03-11 2003-03-11 Methods of forming tungsten or tungsten containing films Expired - Lifetime GB2399350B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB0305544A GB2399350B (en) 2003-03-11 2003-03-11 Methods of forming tungsten or tungsten containing films
DE102004010354A DE102004010354A1 (en) 2003-03-11 2004-03-03 Process for forming thin layers of tungsten or tungsten
JP2004067518A JP2004270035A (en) 2003-03-11 2004-03-10 Method for forming tungsten or tungsten-containing thin film
US10/796,274 US20040214417A1 (en) 2003-03-11 2004-03-10 Methods of forming tungsten or tungsten containing films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0305544A GB2399350B (en) 2003-03-11 2003-03-11 Methods of forming tungsten or tungsten containing films

Publications (3)

Publication Number Publication Date
GB0305544D0 GB0305544D0 (en) 2003-04-16
GB2399350A GB2399350A (en) 2004-09-15
GB2399350B true GB2399350B (en) 2006-06-21

Family

ID=9954543

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0305544A Expired - Lifetime GB2399350B (en) 2003-03-11 2003-03-11 Methods of forming tungsten or tungsten containing films

Country Status (3)

Country Link
JP (1) JP2004270035A (en)
DE (1) DE102004010354A1 (en)
GB (1) GB2399350B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090220777A1 (en) * 2008-03-03 2009-09-03 Martin Sporn Sputter Deposition Method, Sputter Deposition System and Chip
JP5666159B2 (en) * 2010-03-31 2015-02-12 株式会社アルバック Deposition method
JP6082577B2 (en) * 2012-11-29 2017-02-15 株式会社アルバック Method for forming tungsten wiring layer
JP2018518690A (en) * 2015-05-27 2018-07-12 サン−ゴバン パフォーマンス プラスティックス コーポレイション Conductive thin film composite
JP2023084589A (en) * 2021-12-07 2023-06-19 東京エレクトロン株式会社 Sputtering device and control method
JP7590630B1 (en) * 2023-05-30 2024-11-26 株式会社アルバック Method for manufacturing a hard mask
WO2024247388A1 (en) * 2023-05-30 2024-12-05 株式会社アルバック Hard mask manufacturing method

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1133936A (en) * 1965-06-16 1968-11-20 Ion Physics Corp Method and apparatus for forming tenacious deposits on a surface
JPS5263226A (en) * 1975-11-20 1977-05-25 Nippon Tokushu Toryo Kk Elastic sand coat-like top coating compound
JPS63140509A (en) * 1986-12-02 1988-06-13 Tdk Corp Manufacture of magnetically soft film
US5082749A (en) * 1990-03-15 1992-01-21 E. I. Du Pont De Nemours And Company Platinum or palladium/cobalt multilayer on a zinc oxide or indium oxide layer for magneto-optical recording
EP0598422A1 (en) * 1992-10-15 1994-05-25 Koninklijke Philips Electronics N.V. Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target
US5738917A (en) * 1995-02-24 1998-04-14 Advanced Micro Devices, Inc. Process for in-situ deposition of a Ti/TiN/Ti aluminum underlayer
JP2000080473A (en) * 1998-06-26 2000-03-21 Sanyo Electric Co Ltd Carbon film and its formation
US6200433B1 (en) * 1999-11-01 2001-03-13 Applied Materials, Inc. IMP technology with heavy gas sputtering
WO2001059849A1 (en) * 2000-02-09 2001-08-16 Matsushita Electric Industrial Co., Ltd. THIN-FILM TRANSISTOR COMPRISING GATE ELECTRODE OF MoW ALLOY
WO2001073153A1 (en) * 2000-03-29 2001-10-04 Trikon Holdings Limited Method of depositing metal films
US6402907B1 (en) * 1999-11-04 2002-06-11 Trikon Holdings Limited Method of forming a barrier layer
JP2002305163A (en) * 2001-04-05 2002-10-18 Ebara Corp Composite cluster, manufacturing method therefor and manufacturing apparatus thereof
GB2375117A (en) * 2001-01-04 2002-11-06 Trikon Holdings Ltd Methods of sputtering using Krypton
KR20030001744A (en) * 2001-06-27 2003-01-08 주식회사 하이닉스반도체 method for deposition of WNx film and W film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2613646B2 (en) * 1988-12-20 1997-05-28 大日本印刷株式会社 Method of forming low stress metal thin film
JPH05263226A (en) * 1992-03-17 1993-10-12 Fujitsu Ltd Thin film formation method
JP3488551B2 (en) * 1994-09-29 2004-01-19 株式会社東芝 Electrode wiring material and electrode wiring board using the same
JP2000200763A (en) * 1998-12-29 2000-07-18 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacture

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1133936A (en) * 1965-06-16 1968-11-20 Ion Physics Corp Method and apparatus for forming tenacious deposits on a surface
JPS5263226A (en) * 1975-11-20 1977-05-25 Nippon Tokushu Toryo Kk Elastic sand coat-like top coating compound
JPS63140509A (en) * 1986-12-02 1988-06-13 Tdk Corp Manufacture of magnetically soft film
US5082749A (en) * 1990-03-15 1992-01-21 E. I. Du Pont De Nemours And Company Platinum or palladium/cobalt multilayer on a zinc oxide or indium oxide layer for magneto-optical recording
EP0598422A1 (en) * 1992-10-15 1994-05-25 Koninklijke Philips Electronics N.V. Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target
US5738917A (en) * 1995-02-24 1998-04-14 Advanced Micro Devices, Inc. Process for in-situ deposition of a Ti/TiN/Ti aluminum underlayer
JP2000080473A (en) * 1998-06-26 2000-03-21 Sanyo Electric Co Ltd Carbon film and its formation
US6200433B1 (en) * 1999-11-01 2001-03-13 Applied Materials, Inc. IMP technology with heavy gas sputtering
US6402907B1 (en) * 1999-11-04 2002-06-11 Trikon Holdings Limited Method of forming a barrier layer
WO2001059849A1 (en) * 2000-02-09 2001-08-16 Matsushita Electric Industrial Co., Ltd. THIN-FILM TRANSISTOR COMPRISING GATE ELECTRODE OF MoW ALLOY
WO2001073153A1 (en) * 2000-03-29 2001-10-04 Trikon Holdings Limited Method of depositing metal films
GB2375117A (en) * 2001-01-04 2002-11-06 Trikon Holdings Ltd Methods of sputtering using Krypton
JP2002305163A (en) * 2001-04-05 2002-10-18 Ebara Corp Composite cluster, manufacturing method therefor and manufacturing apparatus thereof
KR20030001744A (en) * 2001-06-27 2003-01-08 주식회사 하이닉스반도체 method for deposition of WNx film and W film

Also Published As

Publication number Publication date
GB0305544D0 (en) 2003-04-16
DE102004010354A1 (en) 2004-09-23
GB2399350A (en) 2004-09-15
JP2004270035A (en) 2004-09-30

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20150716 AND 20150722

PE20 Patent expired after termination of 20 years

Expiry date: 20230310