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GB2398168B - Methods and apparatus for forming a film on a substrate - Google Patents

Methods and apparatus for forming a film on a substrate

Info

Publication number
GB2398168B
GB2398168B GB0408705A GB0408705A GB2398168B GB 2398168 B GB2398168 B GB 2398168B GB 0408705 A GB0408705 A GB 0408705A GB 0408705 A GB0408705 A GB 0408705A GB 2398168 B GB2398168 B GB 2398168B
Authority
GB
United Kingdom
Prior art keywords
substrate
film
methods
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0408705A
Other versions
GB0408705D0 (en
GB2398168A (en
Inventor
John Macneil
Robert John Wilby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aviza Europe Ltd
Original Assignee
Aviza Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0001179.1A external-priority patent/GB0001179D0/en
Application filed by Aviza Europe Ltd filed Critical Aviza Europe Ltd
Publication of GB0408705D0 publication Critical patent/GB0408705D0/en
Publication of GB2398168A publication Critical patent/GB2398168A/en
Application granted granted Critical
Publication of GB2398168B publication Critical patent/GB2398168B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W20/071—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/36—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H10P14/6336—
    • H10P14/6532—
    • H10P14/662—
    • H10P14/6682—
    • H10P14/6905—
    • H10P14/6922—
    • H10P14/69433—
    • H10P50/283—
    • H10W20/088—
    • H10W20/0888—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB0408705A 2000-01-19 2001-01-17 Methods and apparatus for forming a film on a substrate Expired - Fee Related GB2398168B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0001179.1A GB0001179D0 (en) 2000-01-19 2000-01-19 Methods & apparatus for forming a film on a substrate
GB0101160A GB2361808B (en) 2000-01-19 2001-01-17 Methods and apparatus for forming a film on a substrate

Publications (3)

Publication Number Publication Date
GB0408705D0 GB0408705D0 (en) 2004-05-26
GB2398168A GB2398168A (en) 2004-08-11
GB2398168B true GB2398168B (en) 2004-09-15

Family

ID=32715136

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0408705A Expired - Fee Related GB2398168B (en) 2000-01-19 2001-01-17 Methods and apparatus for forming a film on a substrate
GB0408706A Expired - Fee Related GB2399453B (en) 2000-01-19 2001-01-17 Methods and apparatus for forming a film on a substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0408706A Expired - Fee Related GB2399453B (en) 2000-01-19 2001-01-17 Methods and apparatus for forming a film on a substrate

Country Status (1)

Country Link
GB (2) GB2398168B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11674222B2 (en) * 2020-09-29 2023-06-13 Applied Materials, Inc. Method of in situ ceramic coating deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
WO1999041423A2 (en) * 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
EP1094506A2 (en) * 1999-10-18 2001-04-25 Applied Materials, Inc. Capping layer for extreme low dielectric constant films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6340435B1 (en) * 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6004883A (en) * 1998-10-23 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Dual damascene patterned conductor layer formation method without etch stop layer
US6498399B2 (en) * 1999-09-08 2002-12-24 Alliedsignal Inc. Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
WO1999041423A2 (en) * 1998-02-11 1999-08-19 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
EP1094506A2 (en) * 1999-10-18 2001-04-25 Applied Materials, Inc. Capping layer for extreme low dielectric constant films

Also Published As

Publication number Publication date
GB2399453A (en) 2004-09-15
GB0408706D0 (en) 2004-05-26
GB2399453B (en) 2004-11-03
GB0408705D0 (en) 2004-05-26
GB2398168A (en) 2004-08-11

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110117