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GB2394600B - One-cylinder stack capacitor - Google Patents

One-cylinder stack capacitor

Info

Publication number
GB2394600B
GB2394600B GB0400348A GB0400348A GB2394600B GB 2394600 B GB2394600 B GB 2394600B GB 0400348 A GB0400348 A GB 0400348A GB 0400348 A GB0400348 A GB 0400348A GB 2394600 B GB2394600 B GB 2394600B
Authority
GB
United Kingdom
Prior art keywords
stack capacitor
cylinder stack
cylinder
capacitor
stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0400348A
Other versions
GB0400348D0 (en
GB2394600A (en
Inventor
Jung-Hwan Oh
Ki-Hyun Hwang
Jae-Young Park
In-Seak Hwang
Young-Wook Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2001-0078286A external-priority patent/KR100434496B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB0227700A external-priority patent/GB2386471B/en
Publication of GB0400348D0 publication Critical patent/GB0400348D0/en
Publication of GB2394600A publication Critical patent/GB2394600A/en
Application granted granted Critical
Publication of GB2394600B publication Critical patent/GB2394600B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
GB0400348A 2001-12-11 2002-11-27 One-cylinder stack capacitor Expired - Lifetime GB2394600B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2001-0078286A KR100434496B1 (en) 2001-12-11 2001-12-11 One cylinder stack capacitor and fabrication method thereof using double mold
US10/136,385 US6700153B2 (en) 2001-12-11 2002-05-02 One-cylinder stack capacitor and method for fabricating the same
GB0227700A GB2386471B (en) 2001-12-11 2002-11-27 A method for fabricating a one-cylinder stack capacitor

Publications (3)

Publication Number Publication Date
GB0400348D0 GB0400348D0 (en) 2004-02-11
GB2394600A GB2394600A (en) 2004-04-28
GB2394600B true GB2394600B (en) 2004-08-18

Family

ID=32045680

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0400348A Expired - Lifetime GB2394600B (en) 2001-12-11 2002-11-27 One-cylinder stack capacitor

Country Status (1)

Country Link
GB (1) GB2394600B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100825A (en) * 1990-11-16 1992-03-31 Micron Technology, Inc. Method of making stacked surrounding reintrant wall capacitor
JPH11214645A (en) * 1998-01-27 1999-08-06 Sony Corp Semiconductor memory device and method of manufacturing the same
US6222722B1 (en) * 1998-04-02 2001-04-24 Kabushiki Kaisha Toshiba Storage capacitor having undulated lower electrode for a semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5100825A (en) * 1990-11-16 1992-03-31 Micron Technology, Inc. Method of making stacked surrounding reintrant wall capacitor
JPH11214645A (en) * 1998-01-27 1999-08-06 Sony Corp Semiconductor memory device and method of manufacturing the same
US6222722B1 (en) * 1998-04-02 2001-04-24 Kabushiki Kaisha Toshiba Storage capacitor having undulated lower electrode for a semiconductor device

Also Published As

Publication number Publication date
GB0400348D0 (en) 2004-02-11
GB2394600A (en) 2004-04-28

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20221126