GB2392007A - Integrated optoelectronic photodetector Tap-off waveguide light sensor - Google Patents
Integrated optoelectronic photodetector Tap-off waveguide light sensor Download PDFInfo
- Publication number
- GB2392007A GB2392007A GB0218843A GB0218843A GB2392007A GB 2392007 A GB2392007 A GB 2392007A GB 0218843 A GB0218843 A GB 0218843A GB 0218843 A GB0218843 A GB 0218843A GB 2392007 A GB2392007 A GB 2392007A
- Authority
- GB
- United Kingdom
- Prior art keywords
- light
- waveguide
- region
- light sensor
- absorbing region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims abstract description 35
- 239000002800 charge carrier Substances 0.000 claims abstract description 13
- 230000031700 light absorption Effects 0.000 claims abstract description 3
- 238000010079 rubber tapping Methods 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000005253 cladding Methods 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 2
- 229910000676 Si alloy Inorganic materials 0.000 claims description 2
- 239000011358 absorbing material Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- NAGRVUXEKKZNHT-UHFFFAOYSA-N Imazosulfuron Chemical compound COC1=CC(OC)=NC(NC(=O)NS(=O)(=O)C=2N3C=CC=CC3=NC=2Cl)=N1 NAGRVUXEKKZNHT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
- G02F1/0123—Circuits for the control or stabilisation of the bias voltage, e.g. automatic bias control [ABC] feedback loops
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A light sensor for tapping off a fraction of an optical signal from an integrated optical waveguide 1, comprising: an integrated optical waveguide 1 having a light guiding region 2A of a first refractive index higher than the refractive index of adjacent regions; a light absorbing region 6 in optical communication with part of said light guiding region and arranged such that a fraction of light transmitted along the waveguide 1 is tapped off into the light absorbing region 6 and at least partially absorbed and a detector for detecting free charge carriers generated by absorption of light in the light absorbing region, the fraction of light tapped-off from the waveguide being determined by the dimensions of the light absorbing region.
Description
( 1 2392007
A TAKEOFF LIGHT SENSOR
This invention relates to a light sensor, in particular a light sensor for sensing an optical signal transmitted along a waveguide.
A variety of types of light sensors are known which can be mounted on an integrated optical circuit in order to receive light from a waveguide integrated on the circuit. One example is a SiGe/Si multi-quantum well (MOW) structure arranged to form a photodetector which can be mounted on a silicon optical circuit to receive an optical signal directed thereto by a waveguide. If the sensor is to be used to monitor an optical signal it is positioned to receive light from a branch waveguide which taps off a fraction of an optical signal from a main, transmission waveguide. Typically, a Y-coupler or evanescent coupler is used to tap-off a fraction of the optical signal from the main waveguide to the branch waveguide. However, the fraction of the signal tapped-off is highly dependent on fabrication tolerances of the coupler and hence is difficult to control. The present invention aims to provide an alternative form of light sensor which helps overcome this problem.
According to the invention, there is provided a light sensor for tapping off a fraction of an optical signal from an integrated optical waveguide, comprising: an integrated optical waveguide having a light guiding region of a first refractive index higher than the refractive index of adjacent regions; a light absorbing region, in optical communication with part of said light guiding region and arranged such that a fraction of light transmitted along the waveguide is tapped off into said light absorbing region and at least partially absorbed thereby, and detector means for detecting free charge carriers generated by absorption of light in said light absorbing region, the fraction of light tapped-off from the waveguide being substantially determined by dimensions of the light absorbing region.
Preferred and optional features of the invention will be apparent from the following description and from the subsidiary claims of the specification.
Reference to refractive index herein is to be interpreted as including the effective refractive index where appropriate.
The invention will now be further described, merely by way of example, with reference to the accompanying drawings, in which: Figure 1 is a schematic cross-sectional view of a first embodiment of a light sensor according to the invention; Figure 2 is a cross-sectional view through a second embodiment of a light sensor according to the invention; Figure 3 is a plan view of a light sensor such as that shown in Figure 1 or 2; and Figures 4, 5 and 6 are schematic plan, perspective (part-sectional) and cross-
sectional views of a third embodiment of a light sensor according to the present invention.
The light sensors used in this invention may be of the type described in GB0131003.6 the disclosure of which is incorporated herein. This type of light
sensor comprises an absorptive region arranged to generate free charge carriers when light of one or more selected wavelengths is incident thereon, the free charge carriers being detected so as to provide an electrical signal indicative of the optical signal being sensed.
The absorptive region may comprise any material which generates free charge carriers when light of one or more selected wavelengths is incident
( 3 thereon. It may, for instance, comprise a semiconductor material having a band gap of a size such that photons of a given wavelength (or shorter wavelengths) are able to excite charge carriers across the band gap from the valence band to the conduction band. Alternatively, it may comprise a semiconductor material whose band gap is too large for this to occur for the wavelength(s) of interest but in which deep band gap levels are formed between the conduction and valence bands to facilitate the generation of free charge carriers upon illumination by such wavelengths. It may also comprise light absorptive material such as polycrystalline or amorphous semiconductor materials. It may also comprise isolated regions, for example quantum dots, of material which generates charge carriers upon illumination which can then be swept into the surrounding matrix and then to the detector means.
In another alternative, the absorptive region may be formed of a material having a band gap of the appropriate size to be able to absorb the wavelength(s) of interest, the waveguide with which it is associated having a band gap which is larger and thus unable to absorb these wavelengths.
Examples of suitable absorptive materials include: Ge, Si/Ge alloys, Gerich regions within a silicon matrix, polycrystalline silicon, amorphous silicon, iron silicide, Il-VI and III-V materials etc. In some cases, the absorptive region may be arranged to absorb a specific wavelength or wavelength band, e.g. wavelengths of around 1.3 and/or 1.5 microns (as commonly used in telecommunication applications), in other cases the absorptive region may be capable of absorbing a wider range of wavelengths. Figure 1 shows a schematic cross-sectional view of a first embodiment of the invention. Figure 1 shows a rib waveguide 1 formed in a silicon layer 2 which is separated from a supporting substrate 3 (also typically of silicon) by an optical confinement layer 4 (typically of silicon dioxide). Rib waveguides
( 4 comprising a rib 2A projecting from a slab region 2B formed in a silicon-on-
insulator (SOI) substrate in such a manner are well known. A passivating oxide layer 5 is usually formed over at least the exposed areas of the silicon layer 2. As shown, this is also preferably used to insulate electrical contacts 7A, 7B (see below) from the silicon layer 2. The oxide layer 5 may also extend, at least partially, under the absorbing regions 6A and 6B as well, e.g. to prevent dopants from regions 6A, 6B migrating into the waveguide.
Figure 1 shows a light absorbing region 6 formed over a portion of the rib waveguide 1 and thus in direct physical contact therewith. Preferably, the absorbing layer 6 contacts both the top and side faces of the rib 2A so as to increase its interaction with the optical mode within the waveguide 1, any oxide on the top and side faces having first been removed.
The light absorbing material may, conveniently, be formed of germanium or a silicon-germanium alloy but other materials may be used.
The light absorbing region 6 is in optical communication with a part of the rib waveguide 1 and is arranged such that a fraction of the light transmitted along the rib waveguide 1 is tapped-off into the absorbing region 6 and at least partially absorbed therein. In the arrangement shown, the absorbing region 6 forms an anti-guiding layer on the rib waveguide 1 which spoils the guidance conditions in that part of the waveguide so that a fraction of the light enters the absorbing regions instead of continuing along the waveguide 1.
The absorbing region 6 is of a material having a band gap of a size appropriate to absorb the wavelength(s) of interest and thus generate free charge carriers within the absorbing region 6. The free charge carriers are detected by a diode formed across the absorbing region 6. In the arrangement shown, regions 6A and 6B of the absorbing region over the slab regions 2B of the silicon layer are p- and e-doped respectively and metal
contacts 7A and 7B are formed on the device to provide electrical contact therewith. The fraction of light tapped-off by the absorbing region 6 can be controlled by the dimensions of the absorbing region 6 and primarily by the length L thereof along the optic axis of the waveguide 1 (see Figure 3). The fraction will also be affected by the degree of optical communication between the absorbing region 6 and the waveguide 1, e.g. whether the region 6 is in contact with the top and/or sides of the rib 2A and/or in contact with the slab regions 2B. It will also be affected by the nature of the material forming the absorbing region 6 and by the thickness thereof. However, all these factors can be maintained substantially constant in a particular set-up so the principal variable controlling the fraction tapped-off is the length L. This variable can be easily controlled in the fabrication of the device, e.g. by lithographic techniques or deposition techniques used to form the absorbing layer 6 over the waveguide 1.
Typically, the light sensor is arranged to tap-off 1-10% of the light carried by the waveguide.
It will be appreciated that the rib waveguide 1 formed in the silicon layer 2 has a higher refractive index or effective refractive index than the adjacent materials, i.e. the underlying oxide layer 4, the oxide 5 and/or air above the waveguide and the slab areas either side of the waveguide 1. In the case of a silicon rib waveguide, the refractive index difference with its surroundings is relatively high so the optical mode is tightly confined within the waveguide.
The material forming the absorbing region 6 thus, preferably, has a higher refractive index than the waveguide so as to disrupt the guiding conditions as mentioned above.
However, in some applications optical coupling of the absorbing region with the waveguide may merely be by overlap with an evanescent portion of the optical mode carried by the waveguide, which may extend beyond the confines of the waveguide. In this case, the absorbing region need not be in
( 6 direct contact with the waveguide nor does its refractive index need to be higher than that of the waveguide. However, where there is a large refractive index difference between the waveguide and the surrounding material, e.g. across a Si:SiO2 interface, the evanescent portion is small. In such situations, it is thus desirable to remove the oxide layer from the silicon waveguide.
Figure 2 shows a second embodiment of a light sensor according to the present invention, in this case on a waveguide comprising a core 10 surrounded by cladding layers 11A and 11B. Typically, the core 10 and cladding layers 11A and 11B may be formed of a material such as silica, the different areas having different levels of dopant therein so the refractive index of the core 10 is slightly greater than that of the cladding layers. The refractive index step is such a waveguide is typically relatively small so the optical mode is only very loosely confined to the core 10 and a large proportion of the mode travels in the cladding layers even though guided by the core.
As in the first embodiment, a light absorbing region 12 is formed in contact with the core 10. This is conveniently done prior to deposition of the upper cladding layer 11A over the core 10 and lower cladding layer 1B. As before, regions 12A and 12B of the absorbing region are p- and e- doped respectively and metal contacts 13A and 13B are formed through the upper cladding layer 11A to provide electrical contact therewith. The light absorbing region 12 need not be in contact with the core 10 so long as it is in proximity thereto as the optical mode is only loosely confined by the core 10 and extends into the adjacent cladding layers 11 A and 1 1 B. Figure 3 shows a schematic plan view of a waveguide such as that shown in Figure 1 or Figure 2.
Figures 4, 5 and 6 show a plan view, perspective view (part-sectional) and a sectional view, respectively, of a third embodiment of a light sensor according
to the invention. Figure 6 is a sectional view taken on line A-A of Figure 4.
Figure 5 is a perspective view of the waveguide away from the light sensor region. This embodiment is formed on a curve or bend in a waveguide 20 to take advantage of the fact that confinement of an optical mode is generally less on the outer side of a bend. The optical mode is also shifted off-centre so as to lie closer to the outer side of the bend. This means that the guidance conditions are more easily disturbed on the outer side of the bend and/or that the overlap between an absorbing region 21 provided on the outer side of the bend and the evanescent field is increased. As above, the waveguide
comprises a rib 23A and slab regions 23B formed in a silicon layer 23 which is separated from a supporting substrate 24 by an oxide layer 25.
In the arrangement shown, the absorbing region 21 is provided primarily on a side face 23C of a rib waveguide 22. A first metal contact 26A extends over slab region 23B and the top of the rib 23A to provide electrical contact with one edge of the absorbing region 21 and a second metal contact 26B extends over the slab region 23B on the other side of the waveguide to provide electrical contact with a second edge of the absorbing region 21.
Preferably, as shown, the rib 23A is formed so as to have a deeper trench on the outer side of the bend so the side face 23C of the waveguide has a greater dimensions than that on the inner side of the bend. The larger area thereof thus further increases the opportunity for the absorbing region 21 to interact with the optical mode within the waveguide 20.
A passivating dielectric layer 27, e.g. sio2, silicon nitride etc. is, as usual, formed over the exposed surfaces of the silicon layer 23. As shown, this is used to insulate the metal contacts 26A and 26B from the silicon layer 23.
Alternatively, the light absorbing region may be provided over the rib waveguide in a similar manner to that shown in Figure 1.
Claims (16)
1. A light sensor for tapping off a fraction of an optical signal from an integrated optical waveguide, comprising: an integrated optical waveguide having a light guiding region of a first refractive index higher than the refractive index of adjacent regions; a light absorbing region in optical communication with part of said light guiding region and arranged such that a fraction of light transmitted along the waveguide is tapped off into said light absorbing region and at least partially absorbed thereby, and detector means for detecting free charge carriers generated by absorption of light in said light absorbing region, the fraction of light tapped-off from the waveguide being substantially determined by dimensions of the light absorbing region.
2. A light sensor as claimed in claim 1 in which the light absorbing region is in physical contact with said part of said light guiding region.
3. A light sensor as claimed in claim 1 or 2 in which the waveguide is a rib waveguide having a rib portion projecting from a slab portion, the rib portion having a top surface and first and second side surfaces.
4. A light sensor as claimed in claim 2 and 3 in which the light absorbing region is a physical contact with one or more of said top, first and second side faces of the rib portion.
5. A light sensor as claimed in any preceding claim in which said part of said light guiding region is provided within a curved portion of the waveguide.
6. A light sensor as claimed in claim 5 in which the light absorbing region is in contact with a first side face of the rib portion on an outer side of said curved portion of the waveguide.
7. A light sensor as claimed in claim 6 in which said first side face has greater dimensions than the second side face of the rib portion on the inner side of said curved portion of the waveguide.
8. A light sensor as claimed in claim 2 in which the waveguide comprises a waveguide core surrounded by cladding layers, the light absorbing region being in proximity to or in contact with the waveguide core.
9. A light sensor as claimed in any preceding claim in which the light absorbing region has a refractive index higher than that of the light guiding region so as to spoil the guidance conditions in that part of the i light guiding region.
10. A light sensor as claimed in any of claims 1-7 in which the waveguide is formed of silicon.
11. A light sensor as claimed in claim 10 in which the light absorbing region is formed of one of the following: Ge' Si/Ge alloys, Ge-rich regions, polycrystalline silicone, amorphous silicon and iron silicide.
12. A light sensor as claimed in any preceding claim in which the detector means comprises a diode.
13 A light sensor as claimed in claim 12 in which the diode comprises p and e-doped region formed in the light absorbing region. i
14. A light sensor as claimed in any preceding claim arranged to tap-off between 1 and 10% of the optical signal carried by the waveguide.
15. An integrated optical waveguide having a light sensor integrally formed therewith comprising an integrated optical waveguide leading to a
( 11 photodiode portion thereof, said portion being arranged to generate free charge carriers when light of one or more selected wavelengths is incident thereon and comprising a diode for detecting the presence of said free charge carriers, wherein the waveguide is a rib waveguide and said portion comprises a region of light absorbing material formed at an upper part of the rib waveguide, the dimensions of said portion determining the degree of absorption.
16. A light sensor substantially as hereinbefore described with reference to one or more of the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0218843A GB2392007A (en) | 2002-08-14 | 2002-08-14 | Integrated optoelectronic photodetector Tap-off waveguide light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0218843A GB2392007A (en) | 2002-08-14 | 2002-08-14 | Integrated optoelectronic photodetector Tap-off waveguide light sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0218843D0 GB0218843D0 (en) | 2002-09-25 |
| GB2392007A true GB2392007A (en) | 2004-02-18 |
Family
ID=9942254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0218843A Withdrawn GB2392007A (en) | 2002-08-14 | 2002-08-14 | Integrated optoelectronic photodetector Tap-off waveguide light sensor |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2392007A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201706A (en) * | 2020-08-31 | 2021-01-08 | 中国电子科技集团公司第三十八研究所 | Waveguide-integrated photodetector based on evanescent wave coupling |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3873828A (en) * | 1973-08-23 | 1975-03-25 | Hughes Aircraft Co | Integrated optical detector |
| US4360246A (en) * | 1980-05-23 | 1982-11-23 | Hughes Aircraft Company | Integrated waveguide and FET detector |
| US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
| US5032710A (en) * | 1988-09-22 | 1991-07-16 | Canon Kabushiki Kaisha | Photodetector to detect a light in different wavelength regions through clad layer having different thickness portions |
| US5054871A (en) * | 1990-07-02 | 1991-10-08 | Bell Communications Research, Inc. | Semiconductor waveguide and impedance-matched detector |
| US5285514A (en) * | 1991-05-27 | 1994-02-08 | Canon Kabushiki Kaisha | Waveguide type photodetector and a method of fabricating the same |
| US5299057A (en) * | 1992-10-29 | 1994-03-29 | Gte Laboratories Incorporated | Monolithically integrated optical amplifier and photodetector tap |
| US5391869A (en) * | 1993-03-29 | 1995-02-21 | United Technologies Corporation | Single-side growth reflection-based waveguide-integrated photodetector |
| US6061481A (en) * | 1995-06-19 | 2000-05-09 | Heinrich-Hertz-Institut Fuer Nachrichtentechnik Berlin Gmbh. | Optoelectronic circuit |
| US6167172A (en) * | 1999-03-05 | 2000-12-26 | Trw Inc. | Tapered amplitude optical absorber for waveguide photodetectors and electro-absorption modulators |
| EP1133082A1 (en) * | 2000-03-10 | 2001-09-12 | Corning Incorporated | Optical monitoring system |
| US6331445B1 (en) * | 1999-05-07 | 2001-12-18 | National Research Council Of Canada | Phototonic device with strain-induced three dimensional growth morphology |
| EP1225459A2 (en) * | 2001-01-22 | 2002-07-24 | Pioneer Corporation | Surface smoothing by spin coating technique for an opto-electronic component |
| WO2002077682A2 (en) * | 2001-03-27 | 2002-10-03 | Metrophotonics Inc. | Vertical integration of active devices with passive semiconductor waveguides |
-
2002
- 2002-08-14 GB GB0218843A patent/GB2392007A/en not_active Withdrawn
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3873828A (en) * | 1973-08-23 | 1975-03-25 | Hughes Aircraft Co | Integrated optical detector |
| US4360246A (en) * | 1980-05-23 | 1982-11-23 | Hughes Aircraft Company | Integrated waveguide and FET detector |
| US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
| US5032710A (en) * | 1988-09-22 | 1991-07-16 | Canon Kabushiki Kaisha | Photodetector to detect a light in different wavelength regions through clad layer having different thickness portions |
| US5054871A (en) * | 1990-07-02 | 1991-10-08 | Bell Communications Research, Inc. | Semiconductor waveguide and impedance-matched detector |
| US5285514A (en) * | 1991-05-27 | 1994-02-08 | Canon Kabushiki Kaisha | Waveguide type photodetector and a method of fabricating the same |
| US5299057A (en) * | 1992-10-29 | 1994-03-29 | Gte Laboratories Incorporated | Monolithically integrated optical amplifier and photodetector tap |
| US5391869A (en) * | 1993-03-29 | 1995-02-21 | United Technologies Corporation | Single-side growth reflection-based waveguide-integrated photodetector |
| US6061481A (en) * | 1995-06-19 | 2000-05-09 | Heinrich-Hertz-Institut Fuer Nachrichtentechnik Berlin Gmbh. | Optoelectronic circuit |
| US6167172A (en) * | 1999-03-05 | 2000-12-26 | Trw Inc. | Tapered amplitude optical absorber for waveguide photodetectors and electro-absorption modulators |
| US6331445B1 (en) * | 1999-05-07 | 2001-12-18 | National Research Council Of Canada | Phototonic device with strain-induced three dimensional growth morphology |
| EP1133082A1 (en) * | 2000-03-10 | 2001-09-12 | Corning Incorporated | Optical monitoring system |
| EP1225459A2 (en) * | 2001-01-22 | 2002-07-24 | Pioneer Corporation | Surface smoothing by spin coating technique for an opto-electronic component |
| WO2002077682A2 (en) * | 2001-03-27 | 2002-10-03 | Metrophotonics Inc. | Vertical integration of active devices with passive semiconductor waveguides |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201706A (en) * | 2020-08-31 | 2021-01-08 | 中国电子科技集团公司第三十八研究所 | Waveguide-integrated photodetector based on evanescent wave coupling |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0218843D0 (en) | 2002-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2749973C (en) | Optical device having light sensor employing horizontal electrical field | |
| CN102696113B (en) | There are the Optical devices of the optical sensor adopting horizontal component of electric field | |
| US7826700B2 (en) | In-line light sensor | |
| US10955692B2 (en) | Optoelectronic component | |
| KR100745274B1 (en) | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator ??? platform | |
| AU752697B2 (en) | Method of and integrated optical circuit for stray light absorption | |
| US8649639B2 (en) | Method and system for waveguide mode filters | |
| US8410566B2 (en) | Application of electrical field power to light-transmitting medium | |
| CN103119487B (en) | An optical monitor configured to tap a portion of an optical signal from an intermediate waveguide | |
| US8989522B2 (en) | Isolation of components on optical device | |
| US20060133754A1 (en) | Ultra low-loss CMOS compatible silicon waveguides | |
| US6307242B1 (en) | Semiconductor photo-detector with square-shaped optical wave-guide | |
| CA2831693A1 (en) | Device with multiple light sensors receiving light signals from a waveguide | |
| US10527793B1 (en) | Dump terminator | |
| KR20150088627A (en) | Photodetector | |
| GB2392007A (en) | Integrated optoelectronic photodetector Tap-off waveguide light sensor | |
| US7769259B1 (en) | Optical coupler at interface between light sensor and waveguide | |
| CN100407378C (en) | Polycrystalline germanium-based waveguide detector integrated on epitaxial silicon thin plate on insulating substrate | |
| US10288813B2 (en) | Construction of integrated mode transformers | |
| JP7217464B2 (en) | Optical module and its manufacturing method | |
| GB2383680A (en) | A Light Sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |