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GB2365620A - Optical wavelength shifting by semiconductor intersubband laser - Google Patents

Optical wavelength shifting by semiconductor intersubband laser Download PDF

Info

Publication number
GB2365620A
GB2365620A GB0019376A GB0019376A GB2365620A GB 2365620 A GB2365620 A GB 2365620A GB 0019376 A GB0019376 A GB 0019376A GB 0019376 A GB0019376 A GB 0019376A GB 2365620 A GB2365620 A GB 2365620A
Authority
GB
United Kingdom
Prior art keywords
frequency
electromagnetic radiation
laser
radiation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0019376A
Other languages
English (en)
Other versions
GB0019376D0 (en
Inventor
Christopher Clement Phillips
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial College of London
Original Assignee
Imperial College of London
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial College of London filed Critical Imperial College of London
Priority to GB0019376A priority Critical patent/GB2365620A/en
Publication of GB0019376D0 publication Critical patent/GB0019376D0/en
Priority to DE60105825T priority patent/DE60105825T2/de
Priority to EP01953221A priority patent/EP1310024B1/de
Priority to AU2001275714A priority patent/AU2001275714A1/en
Priority to AT01953221T priority patent/ATE277440T1/de
Priority to ES01953221T priority patent/ES2227242T3/es
Priority to PCT/GB2001/003394 priority patent/WO2002013344A1/en
Priority to US10/343,929 priority patent/US7081985B2/en
Publication of GB2365620A publication Critical patent/GB2365620A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Communication System (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Glass Compositions (AREA)
GB0019376A 2000-08-07 2000-08-07 Optical wavelength shifting by semiconductor intersubband laser Withdrawn GB2365620A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB0019376A GB2365620A (en) 2000-08-07 2000-08-07 Optical wavelength shifting by semiconductor intersubband laser
DE60105825T DE60105825T2 (de) 2000-08-07 2001-07-27 Optische wellenlängenverschiebung
EP01953221A EP1310024B1 (de) 2000-08-07 2001-07-27 Optische wellenlängenverschiebung
AU2001275714A AU2001275714A1 (en) 2000-08-07 2001-07-27 Optical wavelength shifting
AT01953221T ATE277440T1 (de) 2000-08-07 2001-07-27 Optische wellenlängenverschiebung
ES01953221T ES2227242T3 (es) 2000-08-07 2001-07-27 Desplazamiento de longitud de onda optica.
PCT/GB2001/003394 WO2002013344A1 (en) 2000-08-07 2001-07-27 Optical wavelength shifting
US10/343,929 US7081985B2 (en) 2000-08-07 2001-07-27 Optical wavelength shifting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0019376A GB2365620A (en) 2000-08-07 2000-08-07 Optical wavelength shifting by semiconductor intersubband laser

Publications (2)

Publication Number Publication Date
GB0019376D0 GB0019376D0 (en) 2000-09-27
GB2365620A true GB2365620A (en) 2002-02-20

Family

ID=9897149

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0019376A Withdrawn GB2365620A (en) 2000-08-07 2000-08-07 Optical wavelength shifting by semiconductor intersubband laser

Country Status (8)

Country Link
US (1) US7081985B2 (de)
EP (1) EP1310024B1 (de)
AT (1) ATE277440T1 (de)
AU (1) AU2001275714A1 (de)
DE (1) DE60105825T2 (de)
ES (1) ES2227242T3 (de)
GB (1) GB2365620A (de)
WO (1) WO2002013344A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6788727B2 (en) * 2002-06-13 2004-09-07 Intel Corporation Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
FR2965642B1 (fr) 2010-09-30 2012-10-26 Centre Nat Rech Scient Convertisseur optique de longueur d'onde
US9020350B2 (en) 2011-06-24 2015-04-28 Techsys Insights Optical spectrum recovery
KR102065318B1 (ko) 2012-02-03 2020-01-10 라피스캔 시스템스, 인코포레이티드 조합형 산란 및 투과 멀티-뷰 이미징 시스템
US10670740B2 (en) 2012-02-14 2020-06-02 American Science And Engineering, Inc. Spectral discrimination using wavelength-shifting fiber-coupled scintillation detectors
WO2016154044A1 (en) 2015-03-20 2016-09-29 Rapiscan Systems, Inc. Hand-held portable backscatter inspection system
US10830911B2 (en) * 2018-06-20 2020-11-10 American Science And Engineering, Inc. Wavelength-shifting sheet-coupled scintillation detectors
US11340361B1 (en) 2020-11-23 2022-05-24 American Science And Engineering, Inc. Wireless transmission detector panel for an X-ray scanner
US12283389B2 (en) 2021-10-01 2025-04-22 Rapiscan Holdings, Inc. Methods and systems for the concurrent generation of multiple substantially similar X-ray beams

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04360591A (ja) * 1991-06-06 1992-12-14 Hamamatsu Photonics Kk 波長可変光源装置
FR2736168B1 (fr) * 1995-06-30 1997-07-25 Thomson Csf Convertisseur de frequence comprenant un guide semiconducteur a heterostructure
FR2740271B1 (fr) * 1995-10-20 1997-11-07 Thomson Csf Laser a puits quantique
FR2784514B1 (fr) * 1998-10-13 2001-04-27 Thomson Csf Procede de controle d'un laser semiconducteur unipolaire

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DS George and MW McCall, "Wavelength conversion schemes ..."Int. Journ. Optoelec. vol.10 pp 315-323 *

Also Published As

Publication number Publication date
DE60105825T2 (de) 2005-10-06
AU2001275714A1 (en) 2002-02-18
ES2227242T3 (es) 2005-04-01
EP1310024A1 (de) 2003-05-14
ATE277440T1 (de) 2004-10-15
EP1310024B1 (de) 2004-09-22
DE60105825D1 (de) 2004-10-28
US7081985B2 (en) 2006-07-25
GB0019376D0 (en) 2000-09-27
WO2002013344A1 (en) 2002-02-14
US20050073740A1 (en) 2005-04-07

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)