GB2365208A - Amorphous alingan light emitting diode - Google Patents
Amorphous alingan light emitting diode Download PDFInfo
- Publication number
- GB2365208A GB2365208A GB0017755A GB0017755A GB2365208A GB 2365208 A GB2365208 A GB 2365208A GB 0017755 A GB0017755 A GB 0017755A GB 0017755 A GB0017755 A GB 0017755A GB 2365208 A GB2365208 A GB 2365208A
- Authority
- GB
- United Kingdom
- Prior art keywords
- amorphous
- compound semiconductor
- allngan
- light emitting
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000001875 compounds Chemical class 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 4
- 239000010980 sapphire Substances 0.000 claims abstract description 4
- 241000206607 Porphyra umbilicalis Species 0.000 claims description 27
- 239000011701 zinc Substances 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- KWYKSRAECRPMIS-UHFFFAOYSA-N azane;hydrazine Chemical compound N.NN KWYKSRAECRPMIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- HBCLZMGPTDXADD-UHFFFAOYSA-N C[Zn](C)C Chemical compound C[Zn](C)C HBCLZMGPTDXADD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- SWGZHHCRMZDRSN-BTJKTKAUSA-N (Z)-but-2-enedioic acid 1-phenoxypropan-2-ylhydrazine Chemical compound OC(=O)\C=C/C(O)=O.NNC(C)COC1=CC=CC=C1 SWGZHHCRMZDRSN-BTJKTKAUSA-N 0.000 claims 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005253 cladding Methods 0.000 description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 210000003692 ilium Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
- H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Led Devices (AREA)
Abstract
An amorphous AlInGaN light emitting diode comprises i-type, p-type and/or n-type impurity amorphous compound semiconductor layer on a GaN substrate or a sapphire substrate. The amorphous AlInGaN light emitting diode has low manufacture cost and high yield.
Description
<Desc/Clms Page number 1> Arnor hous AllnGaN liaht ernittin- diode Field of the invention The present invention relates to an amorphous AllnGaN light emitting diode. especially to an arnorphous AlInGaN light emitting diode %\ith lwx manufacture cost and hiah vield.
Backaround of the invention The compound serniconductor devices had been found useful application for dispIL,,, and communication products etc. 'More particulafl\. the GaN based COMPOUnd serniconductors ha%e received much attention because of the blue liahi emittina abilltv. The GaN based compound semiconductor is direct band-gap materials with high efficient enerav-transferrin2 rate and has wide band-2ap distribution 2.0-6.4 eV.
US Pat. NO. 5-563.4-121 has proposed a manufacturing method of GaN based compound sernicondUCtOrS. wherein crystalline GaN based compound semiconductors are specifically used to manufacture tight emitting diodes. Ho\#ever. the cr-,-stalline Ga.N- based compound semiconductors have the problems of high cost and tow yield.
Therefore, it is the object of the present invention to provide an amorphous AllnGaN liaht emittin2 diode with tow manufacture cost and hi#zh yields To achieve the above object. the present invention to provide an amorphous AlInGaN light emitting diode comprising sequentially a p-type GaN substrate. a first p-type amorphous compound semiconductor laver. a second p-type amorphous compound semiconductor laver, an amorphous compound semiconductor impurity laver, a p/n-type amorphous compound
<Desc/Clms Page number 2>
semiconductor laver, and an n-tApe arnorphous compound semiconductor layer. Moreover. to ach M, c the abo% e ob ject# the present invention to provide an amorphous AllriGaN1 light ernitting diode cornprisima sequentially a sapphire substrate. an n-type amorphous compound semiconductor laver. a p/n-tv'pe arnorphous compound semiconductor laver. an amorphous compound semiconductor IMPLIF11% la%cr, I skfcond p-t\ pe amorphous COMPOUnd semiconductor la%er, and a first p-t%pe arnorphous compound serniconductor laver, The #, arious objects and ad% antages of the present Invention will be more readilv understood from the follokvina detailed description when read in con#junctlon with the appended drawing. in which: Brief description of drawing: zn
Fl#z: 1 Is a sectional viev, of the amorphous AllnGaNi light emitting diode accordina to the first preferred embodiment of the present invention: Fla. 21 is a sectional view of the arnorphous AlInGaN light emitting diode accordina to the second preferred embodiment of the present invention. Detail description of preferred embodiment With reference now to Fla. 1, the present invention is intended to provide an amorphous AlInGaN light emitting diode with low manufacture cost and hl2h yield. The amorphous AllnGaN light emitting diode according to the present invention comprises sequentially a p-type GaN substrate 100, a first p-type arnorphous compound semiconductor laver 102, a second p-type amorphous compound semiconductor layer 104, an amorphous compound semiconductor impurity laver 106. a p/n-type amorphous compound
<Desc/Clms Page number 3>
semiconductor layer 108. and an n-type amorphous compound semiconductor laver I 10. wherein the laN ers to I 10 can be formed by vapor grovvth. The first p-t\pe amorphous compound semiconductor laver 102 Is functioned as I buffer la% er. The second p-t% pe amorphous COITIPOLind semiconductor Ia% cr 104 is functioned as upper claddin2 la,, er. The amorphous COMPOUnd semiconductor ii-npurity layer 106 has low resistance to function as lig,lit-ernitting laver. The p n-type arnorphous compound semiconductor layer 108 is functioned as upper cladding la%er. The n-type arnorphous COMPOUnd semiconductor layer 110 is Cunctioneclas clectrodearid pro%,Ides p,,nj'UnCtion. It should be noted that the cross section shape of those layers is rectangular shape Including square shape. %/Ioreover, the pads of the LED arc formed in two etched dents (not shok#n) on the n-type amorphous cornpOUnd semiconductor layer 110. kkhereas the only one pad of the LED in US Pat. NO. 5.563.4221 is formed in etched dent. The p-type impurity is selected form the 2roup consisting of Zinc. 'Ma2neslurn. Beryllium, Strontium. Bariurn and Cadmium and has impurities concentration of concentration 1014-22 EA/cm 3. The n-type Impurity is selected form the group consisting of Silicon. Germanium, Tin, Sulfur. Tellurium and Selenium and has impurities concentration of concentration I 0_1 4-2 'EA/cm Moreover. heatin2, annealing, electron-beam shooting for temperature between 601 C to 1200 'C . and operation time between I to 50 minutes can be performed after above process. The reaction P-as contains ammonia or hydrazine. or ammonia- hydrazine combined trimethylaluminum and the reaction gas can further contain the
<Desc/Clms Page number 4>
sin2le or combined gas frorn the trimethyl galliurn and,'or triethyl galliurn. Moreover. the reaction 2as further contains at least one aas o fd leffiv I -zinc. trimethyl-zinc. trimethyl-indiurn. and cyclopentadienyl -magnesIL11-n.
F12. 21 is a sectional % ic%#, of' the amorphous AlInGaN light ernitting diode accordina to the second preferred embodiment of the present invention. The present im,'ention provides an amorphous AlInGaN light ernitting diode comprising sequentially a sapphire substrate 200. an n-type amorphous compound semiconductor layer 202. a p/n-type amorphous compound semiconductor laver 204. an arnorphous compound semiconductor irnpurit\# laver 206, a second p-t,,pe arnorphOLIS compound semiconductor laver 208. and a First p-type amorphous compound semiconductor laver 210. vvhcrein the layers 202 to 210 can be formed by vapor growth. The n-type amorphous compound semiconductor laver 202 is functioned as buffer laver. The p/n-type amorphous compound semiconductor laver 204 is functioned as upper cladding layer. The amorphous compound semiconductor impurity laver 206 has low resistance to function as light-emitting taver. The second p-type amorphous compound semiconductor laver 208 is functioned as upper cladding laver. The First p-type amorphous compound semiconductor laver 210 is functioned as electrode and provides p/n junction.
It should be noted that the cross section shape of those layers is rectanQular shape including square shape. Moreover. the pads of the LED are formed in two etched dents (not shown) on the first p-type amorphous compound semiconductor laver 210. whereas the only one pad of the LED in US Pat, NO. 5,563,422 is formed in etched dent.
4
<Desc/Clms Page number 5>
The p-t,,pe impurity is selected form the 2roup consisting of Zinc. Maanesium. Ber',Ilium. Strontium. Barium and Cadmium and has impurities concentration ofconcentration 10"-"'EA/cm The n-tvpe impurit-, is selected form tile 2rOUP consisting of Silicon. Germanium, Tin, Sulfur. Tellurium and Selenium and has impurities concentration of concentration 10"_-EA,'cn-l. Nloreo%er. hcatln2. arincalina. electron-bearn shooting for temperature bem een 60 1 C to 1200 C . and operation tirne bem-een I to 50 minutes can he performed after above process., The reaction gas contains arnmorlia or hvdrazine,, or ammonia-hydrazine combined trimethvIaluminum and the reaction aas can further contain the sinale or combined bias from the tr'i-nethvl 2all'um and/or trieth-V'I L'a 11LIM. Moreover. the reaction aas further contains at least one gas of dlethyl-zinc. trii-neth% I-zinc. trimethyl-indium. and cyclopentadienyl -magneslul-n.
Although the present invention has been described with reference to the preferred embodiment thereof. it will be understood that the invention is not limited to the details thereof. Various substitutions and modifications have suaszested in the foregoing description. and other will occur to those ofordinar-% skill in the art. Therefore. all such substitutions and modifications are intended to be embraced within the scope of the invention as defined in the appended claims.
<Desc/Clms Page number 6>
Claims (1)
1. An arnorphous AllnGaN light ernittM2 diode comprising, sequential1% a p-t% pe GaN7 substrate. a first p-type 11110IThOLIS COMPOLind semiconductor laN er. a second p-t%pe amorphous compound semiconductor la#,er, an amorphous compound semiconductor irnpurit#, 1wer- a p/n-type amorphous compound serni conductor laver. and an pe amorphous compound semiconductor la" er. 2 The amorphous AllnGaN light ei-nitting 1 1 diode as in clairn 1, #\hercin 1 the P-tVpe Impurity is selected form the group consisting of Zinc. N/lagnesIUM. BervIlium. Strontium. Bart'Llm and CadmiLlIn and has impurities concentration o(concentration lO'-"-EA,crn` The amorphous AllnGaN light emitting diode as In claim 1, wherein the 3 n-t%,Pe Impurity is selected form the group consisting of Silicon. Germanium. Tin. Sulfur. Tellurium and Selenium and has impurities concentration of concentration 10'--- EAjcm' 4. The amorphous AllnGaN light emitting diode as in claim 1. wherein the reaction gas contains ammonia or hydrazine. or ammonia-hydrazine combined trimethylaluminurn and the reaction gas can further contain the single or combined aas from the trimethyl gallium and/or triethyl gallium. 5. The amorphous AllnGaN light emitting diode as in claim 4. wherein the reaction -as further contains at least one !aas of diethyl-zinc, trimethyl-zinc, trimethyl-Indium. and cyclopentadlenyl -magnesium. 6. An amorphous AllnGaN light emitting diode comprising sequentially sapphire substrate, an n-type amorphous compound semiconductor layer, a p/n-type amorphous compound semiconductor layer, an amorphous compound
<Desc/Clms Page number 7>
serniconductor impurity laver. a second p-type amorphous compound semiconductor laver. and a first p-type amorphous compound semiconductor layer. 7. The arnorphous AllnGaN light emittin#g diode as in claim 6, wherein the p-t% # pe impurio, i s selected form the group consisting I I - of Zinc. I N/lagnes' - I LI M. Bervillum. Strontium. Barium and Cadmium and has impurities ConCentration ofconcentration l0"-"EAcm_' . S. The amorphous AllnGaN light emitting diode as in claim 6, wherein the n-t\pe impurity is selected form the group COr1SIStIm,_ of Silicon. Germanium. Tin. Sulfur. Tellurium and Selenium and has impurities concentration ot 1-2concentration 101 "EA.,"crn". 9. The amorphous AllnGaN light ernitting diode as in clairn 6. wherein the reaction gas contains ammonia or h-,,,drazine. or ammonia-hvdrazine combined trimethvlalui-ninum and the reaction gas can further contain the single or combined gas from the trimeth#,,I gallium and/or triethvi gallium. 10. The amorphous AlInGaN light emitting diode as in claim 9. wherein the reaction ,as further contains at least one gas of" diethvl-zinc, trirneth% I-7111c. trimeth-,,I-Indium, and cyclopentadienyl -magnesium. 11. An amorphous AlInGaN light emitfing diode substantially as hereinbefore described with reference to and as illustrated in the accompanying drawings.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0017755A GB2365208A (en) | 2000-07-19 | 2000-07-19 | Amorphous alingan light emitting diode |
| HK00104479A HK1026818A2 (en) | 2000-07-19 | 2000-07-20 | Amorphous a1ingan light emitting diode |
| DE20013106U DE20013106U1 (en) | 2000-07-19 | 2000-07-28 | Amorphous AlInGaN light emitting diode |
| FR0010394A FR2812765B3 (en) | 2000-07-19 | 2000-08-07 | AMORPHOUS ALINGaN LIGHT-EMITTING DIODE |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0017755A GB2365208A (en) | 2000-07-19 | 2000-07-19 | Amorphous alingan light emitting diode |
| HK00104479A HK1026818A2 (en) | 2000-07-19 | 2000-07-20 | Amorphous a1ingan light emitting diode |
| DE20013106U DE20013106U1 (en) | 2000-07-19 | 2000-07-28 | Amorphous AlInGaN light emitting diode |
| FR0010394A FR2812765B3 (en) | 2000-07-19 | 2000-08-07 | AMORPHOUS ALINGaN LIGHT-EMITTING DIODE |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0017755D0 GB0017755D0 (en) | 2000-09-06 |
| GB2365208A true GB2365208A (en) | 2002-02-13 |
Family
ID=27625408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0017755A Withdrawn GB2365208A (en) | 2000-07-19 | 2000-07-19 | Amorphous alingan light emitting diode |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE20013106U1 (en) |
| FR (1) | FR2812765B3 (en) |
| GB (1) | GB2365208A (en) |
| HK (1) | HK1026818A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2231171C1 (en) * | 2003-04-30 | 2004-06-20 | Закрытое акционерное общество "Инновационная фирма "ТЕТИС" | Light-emitting diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0764989A1 (en) * | 1995-09-25 | 1997-03-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device and method for fabricating semiconductor light emitting device |
| GB2317053A (en) * | 1996-09-06 | 1998-03-11 | Hewlett Packard Co | Nitride LED |
| GB2338109A (en) * | 1998-06-05 | 1999-12-08 | Hewlett Packard Co | Light emitting diode |
| EP0977279A2 (en) * | 1998-07-31 | 2000-02-02 | Xerox Corporation | AlGalnN LED and laser diode structures |
-
2000
- 2000-07-19 GB GB0017755A patent/GB2365208A/en not_active Withdrawn
- 2000-07-20 HK HK00104479A patent/HK1026818A2/en not_active IP Right Cessation
- 2000-07-28 DE DE20013106U patent/DE20013106U1/en not_active Expired - Lifetime
- 2000-08-07 FR FR0010394A patent/FR2812765B3/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0764989A1 (en) * | 1995-09-25 | 1997-03-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device and method for fabricating semiconductor light emitting device |
| GB2317053A (en) * | 1996-09-06 | 1998-03-11 | Hewlett Packard Co | Nitride LED |
| GB2338109A (en) * | 1998-06-05 | 1999-12-08 | Hewlett Packard Co | Light emitting diode |
| EP0977279A2 (en) * | 1998-07-31 | 2000-02-02 | Xerox Corporation | AlGalnN LED and laser diode structures |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2231171C1 (en) * | 2003-04-30 | 2004-06-20 | Закрытое акционерное общество "Инновационная фирма "ТЕТИС" | Light-emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| DE20013106U1 (en) | 2000-10-19 |
| HK1026818A2 (en) | 2000-11-24 |
| FR2812765A3 (en) | 2002-02-08 |
| GB0017755D0 (en) | 2000-09-06 |
| FR2812765B3 (en) | 2002-06-14 |
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