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GB2362261B - A photon source - Google Patents

A photon source

Info

Publication number
GB2362261B
GB2362261B GB9927107A GB9927107A GB2362261B GB 2362261 B GB2362261 B GB 2362261B GB 9927107 A GB9927107 A GB 9927107A GB 9927107 A GB9927107 A GB 9927107A GB 2362261 B GB2362261 B GB 2362261B
Authority
GB
United Kingdom
Prior art keywords
photon source
photon
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9927107A
Other versions
GB9927107D0 (en
GB2362261A (en
Inventor
Richard Andrew Hogg
Andrew James Shields
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Research Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Research Europe Ltd filed Critical Toshiba Research Europe Ltd
Priority to GB9927107A priority Critical patent/GB2362261B/en
Publication of GB9927107D0 publication Critical patent/GB9927107D0/en
Priority to US09/713,242 priority patent/US7019333B1/en
Publication of GB2362261A publication Critical patent/GB2362261A/en
Application granted granted Critical
Publication of GB2362261B publication Critical patent/GB2362261B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L9/00Cryptographic mechanisms or cryptographic arrangements for secret or secure communications; Network security protocols
    • H04L9/08Key distribution or management, e.g. generation, sharing or updating, of cryptographic keys or passwords
    • H04L9/0816Key establishment, i.e. cryptographic processes or cryptographic protocols whereby a shared secret becomes available to two or more parties, for subsequent use
    • H04L9/0852Quantum cryptography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341Structures having reduced dimensionality, e.g. quantum wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computer Security & Cryptography (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
GB9927107A 1999-11-16 1999-11-16 A photon source Expired - Lifetime GB2362261B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9927107A GB2362261B (en) 1999-11-16 1999-11-16 A photon source
US09/713,242 US7019333B1 (en) 1999-11-16 2000-11-16 Photon source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9927107A GB2362261B (en) 1999-11-16 1999-11-16 A photon source

Publications (3)

Publication Number Publication Date
GB9927107D0 GB9927107D0 (en) 2000-01-12
GB2362261A GB2362261A (en) 2001-11-14
GB2362261B true GB2362261B (en) 2002-08-21

Family

ID=10864621

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9927107A Expired - Lifetime GB2362261B (en) 1999-11-16 1999-11-16 A photon source

Country Status (1)

Country Link
GB (1) GB2362261B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019090477A1 (en) * 2017-11-07 2019-05-16 华为技术有限公司 Optical waveguide, single-photon source and manufacturing method for optical waveguide

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7068698B2 (en) * 2001-02-07 2006-06-27 The Board Of Trustees Of The Leland Stanford Junior University Room-temperature source of single photons based on a single molecule in a condensed matter host
US7132676B2 (en) 2001-05-15 2006-11-07 Kabushiki Kaisha Toshiba Photon source and a method of operating a photon source
GB2378575B (en) * 2001-05-15 2003-09-03 Toshiba Res Europ Ltd A photon source and a method of operating a photon source
GB2380605B (en) 2001-10-02 2004-01-14 Toshiba Res Europ Ltd A photon source and method of its fabrication and operation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215911A (en) * 1988-03-23 1989-09-27 Gen Electric Co Plc Semiconductor laser
JPH0346289A (en) * 1989-07-14 1991-02-27 Hitachi Ltd Semiconductor device
EP0875946A1 (en) * 1997-04-30 1998-11-04 Interuniversitair Micro-Elektronica Centrum Vzw Light emitting diode with a microcavity and a method of producing such device
EP0877428A2 (en) * 1997-04-30 1998-11-11 Interuniversitair Micro-Elektronica Centrum Vzw A device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing said device
GB2354368A (en) * 1999-09-14 2001-03-21 Toshiba Res Europ Ltd Photon source

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2215911A (en) * 1988-03-23 1989-09-27 Gen Electric Co Plc Semiconductor laser
JPH0346289A (en) * 1989-07-14 1991-02-27 Hitachi Ltd Semiconductor device
EP0875946A1 (en) * 1997-04-30 1998-11-04 Interuniversitair Micro-Elektronica Centrum Vzw Light emitting diode with a microcavity and a method of producing such device
EP0877428A2 (en) * 1997-04-30 1998-11-11 Interuniversitair Micro-Elektronica Centrum Vzw A device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing said device
GB2354368A (en) * 1999-09-14 2001-03-21 Toshiba Res Europ Ltd Photon source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019090477A1 (en) * 2017-11-07 2019-05-16 华为技术有限公司 Optical waveguide, single-photon source and manufacturing method for optical waveguide

Also Published As

Publication number Publication date
GB9927107D0 (en) 2000-01-12
GB2362261A (en) 2001-11-14

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20191115