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GB2359190B - Light emitting devices with riddled barriers for electrons and holes - Google Patents

Light emitting devices with riddled barriers for electrons and holes

Info

Publication number
GB2359190B
GB2359190B GB0003367A GB0003367A GB2359190B GB 2359190 B GB2359190 B GB 2359190B GB 0003367 A GB0003367 A GB 0003367A GB 0003367 A GB0003367 A GB 0003367A GB 2359190 B GB2359190 B GB 2359190B
Authority
GB
United Kingdom
Prior art keywords
riddled
barriers
electrons
holes
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0003367A
Other versions
GB0003367D0 (en
GB2359190A (en
Inventor
Wang Nang Wang
Yurii Georgievich Shreter
Yurii Toomasovich Rebane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GB0003367A priority Critical patent/GB2359190B/en
Publication of GB0003367D0 publication Critical patent/GB0003367D0/en
Publication of GB2359190A publication Critical patent/GB2359190A/en
Application granted granted Critical
Publication of GB2359190B publication Critical patent/GB2359190B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
GB0003367A 2000-02-14 2000-02-14 Light emitting devices with riddled barriers for electrons and holes Expired - Fee Related GB2359190B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0003367A GB2359190B (en) 2000-02-14 2000-02-14 Light emitting devices with riddled barriers for electrons and holes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0003367A GB2359190B (en) 2000-02-14 2000-02-14 Light emitting devices with riddled barriers for electrons and holes

Publications (3)

Publication Number Publication Date
GB0003367D0 GB0003367D0 (en) 2000-04-05
GB2359190A GB2359190A (en) 2001-08-15
GB2359190B true GB2359190B (en) 2004-02-11

Family

ID=9885562

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0003367A Expired - Fee Related GB2359190B (en) 2000-02-14 2000-02-14 Light emitting devices with riddled barriers for electrons and holes

Country Status (1)

Country Link
GB (1) GB2359190B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
JPH10270173A (en) * 1997-03-27 1998-10-09 Junji Kido Organic electroluminescent element and its manufacture

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
JPH10270173A (en) * 1997-03-27 1998-10-09 Junji Kido Organic electroluminescent element and its manufacture

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WPI Abstract Accession No 1998-600400 & JP 10 270 173 A *

Also Published As

Publication number Publication date
GB0003367D0 (en) 2000-04-05
GB2359190A (en) 2001-08-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20080214