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GB2352561B - DRAM cell capacitor - Google Patents

DRAM cell capacitor

Info

Publication number
GB2352561B
GB2352561B GB0021424A GB0021424A GB2352561B GB 2352561 B GB2352561 B GB 2352561B GB 0021424 A GB0021424 A GB 0021424A GB 0021424 A GB0021424 A GB 0021424A GB 2352561 B GB2352561 B GB 2352561B
Authority
GB
United Kingdom
Prior art keywords
dram cell
cell capacitor
capacitor
dram
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0021424A
Other versions
GB2352561A (en
GB0021424D0 (en
Inventor
Yun-Gi Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019980028822A external-priority patent/KR100292938B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0021424D0 publication Critical patent/GB0021424D0/en
Publication of GB2352561A publication Critical patent/GB2352561A/en
Application granted granted Critical
Publication of GB2352561B publication Critical patent/GB2352561B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10P50/667—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB0021424A 1998-07-16 1999-05-27 DRAM cell capacitor Expired - Fee Related GB2352561B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019980028822A KR100292938B1 (en) 1998-07-16 1998-07-16 Highly integrated DRAM cell capacitors and their manufacturing method
GB9912457A GB2339962B (en) 1998-07-16 1999-05-27 Cylindrical capacitor and a method of fabrication thereof

Publications (3)

Publication Number Publication Date
GB0021424D0 GB0021424D0 (en) 2000-10-18
GB2352561A GB2352561A (en) 2001-01-31
GB2352561B true GB2352561B (en) 2003-02-19

Family

ID=26315609

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0021424A Expired - Fee Related GB2352561B (en) 1998-07-16 1999-05-27 DRAM cell capacitor

Country Status (1)

Country Link
GB (1) GB2352561B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401681A (en) * 1993-02-12 1995-03-28 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells
US5491103A (en) * 1993-04-08 1996-02-13 Samsung Electronics Co., Ltd. Method for manufacturing a capacitor structure of a semiconductor memory device
US5597756A (en) * 1995-06-21 1997-01-28 Micron Technology, Inc. Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack
WO1997032342A1 (en) * 1996-03-01 1997-09-04 Ace Memory, Inc. High capacity stacked dram device and process
US5714779A (en) * 1992-06-30 1998-02-03 Siemens Aktiengesellschaft Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor
US5756388A (en) * 1997-06-24 1998-05-26 Powerchip Semiconductor Corp. Method for fabricating a rake-shaped capacitor
US5770500A (en) * 1996-11-15 1998-06-23 Micron Technology, Inc. Process for improving roughness of conductive layer
GB2336942A (en) * 1998-04-29 1999-11-03 Samsung Electronics Co Ltd Method for fabricating a DRAM cell capacitor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714779A (en) * 1992-06-30 1998-02-03 Siemens Aktiengesellschaft Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor
US5401681A (en) * 1993-02-12 1995-03-28 Micron Technology, Inc. Method of forming a bit line over capacitor array of memory cells
US5491103A (en) * 1993-04-08 1996-02-13 Samsung Electronics Co., Ltd. Method for manufacturing a capacitor structure of a semiconductor memory device
US5597756A (en) * 1995-06-21 1997-01-28 Micron Technology, Inc. Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack
WO1997032342A1 (en) * 1996-03-01 1997-09-04 Ace Memory, Inc. High capacity stacked dram device and process
US5770500A (en) * 1996-11-15 1998-06-23 Micron Technology, Inc. Process for improving roughness of conductive layer
US5756388A (en) * 1997-06-24 1998-05-26 Powerchip Semiconductor Corp. Method for fabricating a rake-shaped capacitor
GB2336942A (en) * 1998-04-29 1999-11-03 Samsung Electronics Co Ltd Method for fabricating a DRAM cell capacitor

Also Published As

Publication number Publication date
GB2352561A (en) 2001-01-31
GB0021424D0 (en) 2000-10-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090527