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GB2349737B - Electron beam exposure apparatus - Google Patents

Electron beam exposure apparatus

Info

Publication number
GB2349737B
GB2349737B GB0010288A GB0010288A GB2349737B GB 2349737 B GB2349737 B GB 2349737B GB 0010288 A GB0010288 A GB 0010288A GB 0010288 A GB0010288 A GB 0010288A GB 2349737 B GB2349737 B GB 2349737B
Authority
GB
United Kingdom
Prior art keywords
electron beam
exposure apparatus
beam exposure
electron
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0010288A
Other versions
GB0010288D0 (en
GB2349737A (en
Inventor
Hiroshi Yasuda
Takamasa Sato
Mitsuhiro Nakano
Kenichi Miyazawa
Shigeru Maruyama
Tomohiko Abe
Takeshi Haraguchi
Shin-Ichi Hamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of GB0010288D0 publication Critical patent/GB0010288D0/en
Publication of GB2349737A publication Critical patent/GB2349737A/en
Application granted granted Critical
Publication of GB2349737B publication Critical patent/GB2349737B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H10P76/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
GB0010288A 1999-04-28 2000-04-27 Electron beam exposure apparatus Expired - Fee Related GB2349737B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12244399 1999-04-28

Publications (3)

Publication Number Publication Date
GB0010288D0 GB0010288D0 (en) 2000-06-14
GB2349737A GB2349737A (en) 2000-11-08
GB2349737B true GB2349737B (en) 2001-06-13

Family

ID=14835986

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0010288A Expired - Fee Related GB2349737B (en) 1999-04-28 2000-04-27 Electron beam exposure apparatus

Country Status (4)

Country Link
KR (1) KR100339140B1 (en)
DE (1) DE10020714A1 (en)
GB (1) GB2349737B (en)
TW (1) TW538323B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139146B2 (en) 2019-02-27 2021-10-05 Nuflare Technology, Inc. Set of aperture substrates for multiple beams and multi charged particle beam apparatus

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008062450B4 (en) * 2008-12-13 2012-05-03 Vistec Electron Beam Gmbh Arrangement for illuminating a substrate with a plurality of individually shaped particle beams for high-resolution lithography of structural patterns
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
WO2013051467A1 (en) * 2011-10-03 2013-04-11 株式会社Ｐａｒａｍ Electron beam lithography device and lithographic method
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
EP2937888B1 (en) * 2014-04-25 2019-02-20 IMS Nanofabrication GmbH Multi-beam tool for cutting patterns
EP3358599B1 (en) 2014-05-30 2021-01-27 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using row calibration
JP6890373B2 (en) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー Compensation for imaging deflection in particle beam lithography machines using a convolution kernel
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
JP7183315B2 (en) 2020-02-03 2022-12-05 アイエムエス ナノファブリケーション ゲーエムベーハー Compensation of Blur Change in Multibeam Writer
JP7555297B2 (en) 2020-04-24 2024-09-24 アイエムエス ナノファブリケーション ゲーエムベーハー Charged Particle Source
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4524278A (en) * 1982-02-15 1985-06-18 Poole Jan B Le Charged particle beam exposure device incorporating beam splitting
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
GB2340991A (en) * 1998-08-19 2000-03-01 Ims Ionen Mikrofab Syst Multibeam particle lithography

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4524278A (en) * 1982-02-15 1985-06-18 Poole Jan B Le Charged particle beam exposure device incorporating beam splitting
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
GB2340991A (en) * 1998-08-19 2000-03-01 Ims Ionen Mikrofab Syst Multibeam particle lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11139146B2 (en) 2019-02-27 2021-10-05 Nuflare Technology, Inc. Set of aperture substrates for multiple beams and multi charged particle beam apparatus

Also Published As

Publication number Publication date
KR100339140B1 (en) 2002-05-31
TW538323B (en) 2003-06-21
KR20010014831A (en) 2001-02-26
GB0010288D0 (en) 2000-06-14
GB2349737A (en) 2000-11-08
DE10020714A1 (en) 2001-01-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040427