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GB2234529B - Epitaxial growth process - Google Patents

Epitaxial growth process

Info

Publication number
GB2234529B
GB2234529B GB8917097A GB8917097A GB2234529B GB 2234529 B GB2234529 B GB 2234529B GB 8917097 A GB8917097 A GB 8917097A GB 8917097 A GB8917097 A GB 8917097A GB 2234529 B GB2234529 B GB 2234529B
Authority
GB
United Kingdom
Prior art keywords
epitaxial growth
growth process
epitaxial
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8917097A
Other versions
GB8917097D0 (en
GB2234529A (en
Inventor
Stephen Rolt
Kenneth George Snowden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Nortel Networks Optical Components Ltd
Original Assignee
STC PLC
Northern Telecom Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC, Northern Telecom Europe Ltd filed Critical STC PLC
Priority to GB8917097A priority Critical patent/GB2234529B/en
Publication of GB8917097D0 publication Critical patent/GB8917097D0/en
Publication of GB2234529A publication Critical patent/GB2234529A/en
Application granted granted Critical
Publication of GB2234529B publication Critical patent/GB2234529B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P14/3218—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H10P14/24—
    • H10P14/27—
    • H10P14/2905—
    • H10P14/3418—
    • H10P14/3421—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
GB8917097A 1989-07-26 1989-07-26 Epitaxial growth process Expired - Fee Related GB2234529B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8917097A GB2234529B (en) 1989-07-26 1989-07-26 Epitaxial growth process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8917097A GB2234529B (en) 1989-07-26 1989-07-26 Epitaxial growth process

Publications (3)

Publication Number Publication Date
GB8917097D0 GB8917097D0 (en) 1989-09-13
GB2234529A GB2234529A (en) 1991-02-06
GB2234529B true GB2234529B (en) 1993-06-02

Family

ID=10660663

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8917097A Expired - Fee Related GB2234529B (en) 1989-07-26 1989-07-26 Epitaxial growth process

Country Status (1)

Country Link
GB (1) GB2234529B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116013766A (en) * 2021-10-22 2023-04-25 华为数字能源技术有限公司 A kind of epitaxial equipment and semiconductor device

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119968A (en) * 1964-11-06 1968-07-17 Siemens Ag Improvements in or relating to methods producing semiconductor material
GB1228920A (en) * 1967-05-31 1971-04-21
GB2119278A (en) * 1982-04-13 1983-11-16 Michael Paul Neary Improvements in or relating to a chemical method
EP0125318A1 (en) * 1982-11-15 1984-11-21 MITSUI TOATSU CHEMICALS, Inc. Method of forming amorphous silicon film
US4505949A (en) * 1984-04-25 1985-03-19 Texas Instruments Incorporated Thin film deposition using plasma-generated source gas
GB2162369A (en) * 1984-07-26 1986-01-29 Nishizawa Junichi Apparatus for forming semiconductor crystal
GB2163000A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Apparatus for forming crystal of semiconductor
GB2163181A (en) * 1984-07-16 1986-02-19 Japan Res Dev Corp Method of manufacturing GaAs single crystals
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
EP0229633A2 (en) * 1986-01-08 1987-07-22 Gregory A. Roche Apparatus and method for laser-induced chemical vapor deposition
GB2200138A (en) * 1984-07-26 1988-07-27 Japan Res Dev Corp Semiconductor crystal growth apparatus

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119968A (en) * 1964-11-06 1968-07-17 Siemens Ag Improvements in or relating to methods producing semiconductor material
GB1228920A (en) * 1967-05-31 1971-04-21
GB2119278A (en) * 1982-04-13 1983-11-16 Michael Paul Neary Improvements in or relating to a chemical method
EP0125318A1 (en) * 1982-11-15 1984-11-21 MITSUI TOATSU CHEMICALS, Inc. Method of forming amorphous silicon film
US4645687A (en) * 1983-11-10 1987-02-24 At&T Laboratories Deposition of III-V semiconductor materials
US4505949A (en) * 1984-04-25 1985-03-19 Texas Instruments Incorporated Thin film deposition using plasma-generated source gas
GB2163181A (en) * 1984-07-16 1986-02-19 Japan Res Dev Corp Method of manufacturing GaAs single crystals
GB2162369A (en) * 1984-07-26 1986-01-29 Nishizawa Junichi Apparatus for forming semiconductor crystal
GB2163000A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Apparatus for forming crystal of semiconductor
GB2200138A (en) * 1984-07-26 1988-07-27 Japan Res Dev Corp Semiconductor crystal growth apparatus
EP0229633A2 (en) * 1986-01-08 1987-07-22 Gregory A. Roche Apparatus and method for laser-induced chemical vapor deposition

Also Published As

Publication number Publication date
GB8917097D0 (en) 1989-09-13
GB2234529A (en) 1991-02-06

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020726