GB2228949A - Silicon doped diamond films - Google Patents
Silicon doped diamond films Download PDFInfo
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- GB2228949A GB2228949A GB9003085A GB9003085A GB2228949A GB 2228949 A GB2228949 A GB 2228949A GB 9003085 A GB9003085 A GB 9003085A GB 9003085 A GB9003085 A GB 9003085A GB 2228949 A GB2228949 A GB 2228949A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/8303—Diamond
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
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- H10P14/24—
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- H10P14/2905—
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- H10P14/3406—
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- H10P14/3408—
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- H10P14/3441—
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- H10P14/3444—
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- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A method for the formation of an n-type semiconducting thin film of diamond wherein a source gas which contains carbon capable of forming a diamond thin film on a substrate by a vapor phase technique is decomposed to deposit a diamond thin film on a substrate is characterised in that an impurity gas containing Si is added in such a ratio of Si/C that Si/C</=2.0%. A suitable source gas includes at least one material selected from a hydrocarbon, an alcohol and acetone; 1-900 ppm of SiH; with the balance hydrogen. The Si-doped n-type diamond thin film may be used in combination with a boron doped p-type diamond thin film and/or an undoped diamond thin film.
Description
TITLE OF THE INVENTION
METHOD FOR FORMING n-TYPE SEMICONDUCTING DIAMOND FILMS
BY VAPOR PHASE TECHNIQUES
BACKGROUND OF THE INVENTION
Field of The invention
This invention relates to a method of forming n-type semiconducting diamond films by vapor phase synthesis and also to their applications to electronic devices.
Description of The Prior Art
Natural diamonds are usually insulating in nature except for so-called type II-b diamonds which exhibit semiconducting characteristics. However, it is well known in the art that if a trace amount of an appropriate impurity element is incorporated or doped in diamond, it becomes semiconductive. Diamond has a band gap as large as 5.5 eV, so that if converted into a semiconductor, diamond can be expected as a material for semiconducting electronic devices which are operable at high temperatures, for example, of 5000C at which conventional Si devices will fail. In order to fabricate such diamond electronic devices, it is essential to reproducibly form both p and n-type semiconducting diamond films. The p-type semiconducting thin film of diamond can be readily prepared by doping B (boron) in the diamond film.In contrast, it is generally accepted that formation of an n-type semiconducting thin film of diamond with high electric conductivity is very difficult. The n-type semiconducting thin films of diamond have been reported as obtained according to the following procedures.
1) P (phosphorus) doped n-type diamond thin films were obtained by a diamond vapor phase preparation process wherein PH3 gas was added, in small amounts as a doping gas, to source gases including CH4 and H2 [Abstract for the National Meeting of the Japan Electric
Society, p S4-13 (1989) ] . This process will be hereinafter referred to as Prior Art 1.
Fig. 7 shows the resistivities of the Pdoped n-type diamond thin films and B-doped p-type diamond films prepared according to the vapor phase preparation process of Prior Art I, respectively. In the figure, the ordinate indicates the B/C or P/C ratio (ppm) in the starting gases and the abscissa indicates the specific resistance (Q.cm). In the figure, the marks "- " and "0" denote the results with respect to the p-doped diamond thin films and the B-doped diamond thin films, respectively.
2) P-dopes and N (nitrogen)-doped n-type diamond thin films were obtained by a vapor phase preparation process wherein phosphoric acid or ammonia is dissolved in a liquid organic compound such as acetone and applied as a reactant gas [Abstract of the
Autumn Meeting of Japan Society of Applied Physics, Vol.
2, p. 465 (1988)]. This process is hereinafter referred to simply as Prior Art II.
3) n-Type diamond thin films were obtained by implanting C+ ions into bulk single crystal diamond, followed by thermal annealing [Applied Physics Letter,
Vol. 41, No. 10, November 15, 1982, p. 950). This method will be hereinafter referred to as Prior Art III.
In Prior Art I, n-type semiconducting diamond thin films were obtained by doping of P. As shown in Fig. 7, however, the resistivity of the p-doped diamond films is higher by four order of magnitude or over than that of the B-doped diamond films and thus, the conductivity is not satisfactory for practical applications.
In Prior Art II, n-type diamond films were obtained by doping of N or P. The experimental results revealed that among a number of samples, there were found only several n-type diamond films and thus, this prior art method was not satisfactory with respect to reproducibility.
In the method of Prior Art III, it ls necessary to carry out ion implantation after formation of diamond thin films. Unlike the doping through gas, the film formation and doping cannot be carried out simultaneously, coupled with the need of annealing after the ion implantation, thus presenting problems from the standpoints of both costs and productivity.
SUMMARY OF THE INVENTION
It is accordingly an object of the Invention to provide a method for the formation of an n-type semiconducting thin film of diamond by a vapor phase technique In a reproducible manner.
It is another object of the invention to provide a method for the formation of an n-type semiconducting thin film of diamond which has a practical level of conductivity and wherein the film formation and doping can be carried out at the same time.
The above objects can be achieved, according to the invention, by a method for the formation of an n type semiconducting thin film of diamond wherein a source gas which contains carbon capable of forming a diamond thin film on a substrate by a vapor phase technique is decomposed to deposit a diamond thin film on a substrate, the method comprising adding an impurity gas containing Si in such a ratio of Si/C that Si/C s 2.08.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a schematic view of a microwave plasma CVD apparatus used to form diamond thin films;
Fig. 2 Is a schematic illustrative view of a resistivity measuring apparatus using a four-point probe;
Fig. 3 is a graphical representation of the resistivity in relation to the variation in the concentration of impurity gases;
Fig. 4 is a side view of.a p-n junction diode using a B-doped p-type diamond thin film and a Sidoped n-type diamond thin film;
Fig. 5 is a graph showing the V-I characteristic of the diode of Fig. 4;
Fig. 6 is a schematic side view of a photosensor using a three-layer structure including an
Si-doped n-type semiconducting diamond thin film, an undoped diamond thin film and a B-doped p-type semiconducting diamond thin film; and
Fig. 7 is a graphical representation of the resistivity in relation to the variation in the ratios,
B/C and P/C, in starting gases used in Prior Art 1.
DESCRlPTlON OF THE lNVENTlON
In the practice of the invention, a source gas containing C capable of forming a diamond thin film is mixed with a gas containing an lmpurity gas containing Si. This mixed gas is introduced and placed under vapor phase conditions of preparing a diamond thin film under which the temperature and pressure are appropriately controlled, so that the mixed gas is converted into a plasma. Under these conditions, the carbon component in the source gas is decomposed into graphite, amorphous carbon and/or diamond and deposed on a substrate. Since, however, the hydrogen excited in the plasma is predominantly combined with graphite and amorphous carbon and eventually, a diamond film is deposited on the substrate. As stated before, a small amount of Si, I.e. Si/C s 2.0%, is contained in the mixed gas.The atomic radius of Si is 1.175 angstroms which is significantly larger than the atomic radius of C which is 0.77 angstroms. When Si is
Incorporated in the lattice of diamond crystals, the C-C atomic bonds are broken, thereby forming so-called dangling bonds. The dangling bonds become a supply source for free electrons. This is why the diamond thin film formed on a substrate exhibits the n-type semiconducting characteristic. If the content of the gas containing Si is too large, only SiC is formed on the substrate without formation of any diamond thin film.
The method of the invention will become apparent from the following embodiments or examples which should not be construed as limitation thereof.
Example 1
Reference is now made to the accompanying drawings wherein like reference numerals indicate like parts or members and particularly, to Fig. 1 which shows the microwave plasma CVD (chemical vapor deposition) apparatus used to form diamond thin films by a vapor phase technique.
In Fig. 1, a microwave power supply 1 is shown, which has at one side a waveguide 5 through an isolator 2 having a power monitor 3 and a three-stub tuner 4. Indicated at 6 is a quartz reaction chamber 6.
The waveguide 5 is provided at its end a plunger 7 through the reaction chamber 6. The reaction chamber 6 is so intersected with the waveguide 5 as shown in the figure. At the intersection, there is provided an ntype Si wafer substrate 8 of high resistance having a surface area of 20 x 10 mm2. Indicated at 9 is a plasma generated about the Si wafer substrate 8r at 10 is a starting gas introducing port provided at one end of the reaction chamber 6 and at 11 is an exhaust port provided at the other end of the reaction chamber 6. The exhaust port 11 is connected to a vacuum pump (not shown) through an exhaust pipe 12 having a valve 13. A by-pass line 14 with a flow control valve 15 and a stop valve 16 is provided for by-passing the valve 13. Two view ports 17a, 17b are provided at opposite sides of the reaction chamber 6.An optical thermometer 18 for detecting the surface temperature of the Si wafer substrate 8 is placed in the reaction chamber 6 through the view port 17a but is now in offset position. Indicated at 19 is a vacuum sensor with which the gas pressure in the reaction chamber 6 can be monitored and at 20 is a wafer jacket provided around the intersection between the waveguide 5 and the reaction chamber 6.
Fig. 2 shows a four-point probe resistivity measuring device. The device includes a diamond thin film 21, a four-point probe 22, tungsten (W) needles 23 projecting from the probe 22, a voltage gauge 24, an ammeter 25 and a constant current generator 26.
The apparatus of Fig. 1 was used to make the following experiment. Prior to the diamond deposition, the silicon substrate 8 was polished with a paste of diamond powder with a size of 0.25 micrometers for 30 minutes in order to increase the nucleation density of diamond on the substrate. The experiment was made in the following manner.
(1) The polished Si wafer substrate 8 was placed in the reaction chamber 8, and the valve 13 was opened. While the pressure in the reaction chamber 6 was monitored by use of the vacuum sensor 19, the reaction chamber 6 was evacuated by means of the vacuum pump (not shown) to an extent of 10-2 Torr.
(2) A mixed source gas consisting of methane (CH4), silane (SiH4) and hydrogen (H2) was introduced from the starting gas introducing port 10 into the reaction chamber 6. In this example, CH4 was used as a carbon source for the formation of diamond. Other materials capable of producing carbon when decomposed on a heated substrate may be used and include, for example, hydrocarbons such as ethane, propane, ethylene and the like, alcohols, acetone and the like. The source gas used in this example had such a composition of 0.5% of
CH4, and from 1 to 900 ppm of SiH4 with the balance of hydrogen gas. The flow rate was 100 cc/minute. The following experiment was repeated using different concentrations of SiH4.
(3) The valve 13 was closed, and the stop valve 16 was opened. A microwave of 2.45 GHz generated from the microwave power supply 1 at 350 W was introduced into the reaction chamber to generate a plasma.
(4) The flow control valve 15 was regulated so that the gas pressure in the reaction chamber 6 was maintained at 30 Torr, until completion of the experiment.
(5) The Si wafer substrate 8 was heated by means of the microwave passed through the waveguide 5 into the reaction chamber 6 and the plasma generated only around the substrate. The stab tuner 4 and the plunger 7 were regulated so that the reflection wave became minimized. As a result, the surface temperature of the Si wafer substrate determined by use of the optical thermometer was about 8000C. For the synthesis of diamond, the substrate temperature should be in the range of from 700 to 10000C as is known in the art. In this range, the plasma of CH4, SiH4 and H2 introduced into the reaction chamber 6 generates only about the Si wafer substrate 8, thereby forming carbon atom deposits on the substrate 8. However, the excited hydrogen atoms produced in the plasma 9 preferentially react with carbon atoms forming graphite and amorphous carbon to form a hydrocarbon gas.Thus, such unnecessary carbon atoms can be eliminated from the surface of the Si wafer substrate 8 and only a diamond film grows on the substrate 8.
(6) The above procedure was continued over 7 hours and, as a result, a two micrometer thick diamond film could be formed on the Si wafer substrate 8. The
X-ray diffraction and Raman spectroscopy revealed that the thin films formed using SiH4 In amounts not larger than 100 ppm were made of diamond of good quality.
According to the Zeebeck measurement, It was confirmed that all the films were of n-type.
(7) The thin films formed on the Si wafer substrate 8 were taken out and subjected to measurement of the resistivity by the use of the device shown in
Fig. 2. The results of the measurement are shown in
Fig. 3. In Fig. 3, the ordinate indicates the concentration (ppm) of SiH4 or B2H6 and the abscissa indicates the resistivity ( Q ). In Fig. 3, the marks " and "0", respectively, denote Si-doped diamond film (containing SiC) and B-doped diamond. In the figure, the range indicated by the arrow (± ) in the vertical direction at a concentration of 1 ppm shows a resistivity of Si-doped diamond.
The preparation conditions of the B-doped ptype diamond thin films indicated in Fig. 3 are similar to those of the Si-doped diamond thin films except that
B2H6 is added instead of SiH4 and the concentration of
B2H6 ls varied in the range of from 1 to 50 ppm. The measurement of the resistivity of the B-doped diamond thin films was made using the device shown in Fig. 2.
In Fig. 3, when the concentration of SiH4 is up to about 3 ppm, the resistivity of the Si-doped diamond thin film is similar to that of the B-doped diamond thin film. However, when the concentration of
SiH4 exceeds about 5 ppm, the resistivity of the Sidoped diamond thin film is higher by two orders of magnitude than that of the B-doped diamond thin film (i.e. the conductivity becomes poorer), but is lower by about one order of magnitude than that of the P-doped diamond thin film shown In Fig. 7. Thus, it will be seen that the conductivity is significantly improved by doping with Si. Although the resistivity is lowered at an SiH4 concentration of not less than 100 ppm, this is because SiC is formed on the Si wafer substrate 8 owing to too much an amount of Si in the source gas.
Accordingly, the amount of SiH4 based on CH4 = 0.5% should be not larger than 100 ppm. This corresponds to a ratio of S and C which is Si/C 5 (100 ppm/0.5%)=2%.
With regard to the lower limit of Si/C, such a ratio should be appropriately selected so as to obtain a resistivity which depends on the purpose of the semiconducting diamond thin film. From the standpoint of the addition and preparation of an Si-containing gas, the lower limit is preferably be 0.0001%.
Example 2
As is shown in Fig. 4, a B-doped p-type diamond thin film 32 was first formed on a low resistance p-type wafer substrate 31 in the same manner as in Example 1 except that 1 ppm of B2H6 was added instead of SiH4, followed by further formation of an Sidoped n-type diamond thin film 33 on the first film in the same manner as in Example 1 except that 10 ppm of
SiH4 was added. In the figure, 34a, 34b denote ohmic electrodes and 35a, 35b denote lead wires, respectively.
In this manner, the p-n junction of the diamond thin films were formed. In order to confirm the above, current-voltage measurements were carried out, revealing that the diode had a rectifying action as shown in Fig. 5. Thus, lt will be seen that such a diode using diamond can be operated at high temperatures.
Example 3
As is shown in Fig. 6, a B-doped p-type diamond thin film 32 (p-layer) was formed on a lower resistance p-type Si wafer substrate 31 in the same manner as in Example 1 except that 1 ppm of B2H6 was added instead of SiH4, followed by formation of an undoped insulating diamond thin film 36 (i layer) on the p layer 32 and then of an Si-doped n-type diamond thin film 33 (n layer) on the film 36 in the same manner as in Example 1 except that 10 ppm of SiH4 was used, thereby making a diamond thin film having a triple layer structure of the n layer/i layer/p layer.
When light was irradiated at the i layer of the diamond thin film made of the triple layer structure, a photoelectric voltage was generated. Thus, an optical sensor was realized.
Claims (7)
1. In a method for the formation of an ntype semiconducting thin film of diamond wherein a source gas which contains carbon capable of forming a diamond thin film on a substrate by a vapor phase technique is decomposed to deposit a diamond thin film on a substrate, the improvement comprising adding an impurity gas containing Si in such a ratio of Si/C that
Si/C S 2.0%.
2. A method according to Claim 1, wherein said substrate is heated to a temperature of from 700 to 10000C.
3. A method according to Claim 1, wherein said source gas includes at least a hydrocarbon, an alcohol and acetone and from 1 to 900 ppm of SiH4 with the balance of H2.
4. A method according to Claim 1, further comprising forming a B-doped p-type diamond thin film prior to the formation of the n-type semiconducting thin film of diamond, or vice versa.
5. A method according to Claim 4, further comprising forming an undoped diamond thin film on the
B-doped p-type diamond thin film) or on the Si-doped ntype diamond thin film.
6. A method for the formation of an n-type semiconducting thin film of diamond, substantially as hereinbefore described with reference to any of the
Examples and/or the accompanying drawings.
7. A substrate having an n-type semiconducting thin film of diamond formed by a method according to any of claims 1 to 6.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1037166A JPH02217397A (en) | 1989-02-15 | 1989-02-15 | Vapor-phase synthesis of thin film of n-type semiconductor diamond |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9003085D0 GB9003085D0 (en) | 1990-04-11 |
| GB2228949A true GB2228949A (en) | 1990-09-12 |
| GB2228949B GB2228949B (en) | 1993-06-30 |
Family
ID=12490013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9003085A Expired - Fee Related GB2228949B (en) | 1989-02-15 | 1990-02-12 | Method for forming n-type semiconducting diamond films by vapor phase techniques |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH02217397A (en) |
| GB (1) | GB2228949B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0518532A1 (en) * | 1991-05-29 | 1992-12-16 | De Beers Industrial Diamond Division (Proprietary) Limited | Boron-doped diamond |
| DE19643550A1 (en) * | 1996-10-24 | 1998-05-14 | Leybold Systems Gmbh | Light-transparent, heat radiation reflecting layer system |
| EP1036863A4 (en) * | 1998-07-07 | 2002-11-27 | Japan Science & Tech Corp | LOW-STRENGTH TYPE N DIAMOND SYNTHESIS PROCESS |
| WO2003014427A1 (en) * | 2001-08-08 | 2003-02-20 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US6858080B2 (en) | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
| US7201886B2 (en) | 1998-05-15 | 2007-04-10 | Apollo Diamond, Inc. | Single crystal diamond tool |
| US8591856B2 (en) | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
| US8986645B2 (en) | 2003-12-12 | 2015-03-24 | Element Six Limited | Diamond |
| CN118039466A (en) * | 2024-04-12 | 2024-05-14 | 山东大学 | Composite substrate with Si-doped diamond modified layer and semiconductor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5167478B2 (en) * | 2005-02-22 | 2013-03-21 | 国立大学法人 鹿児島大学 | Semiconductor device and manufacturing method thereof |
| RU2415204C2 (en) * | 2005-06-22 | 2011-03-27 | Элемент Сикс Лимитед | Colourless diamond layer |
| JP4949493B2 (en) * | 2010-02-18 | 2012-06-06 | 日本電信電話株式会社 | N-type semiconductor diamond and method for producing the same |
| JP2016175798A (en) * | 2015-03-20 | 2016-10-06 | ストローブ株式会社 | Nanocrystalline diamond, method for producing the same, and apparatus for producing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62235393A (en) * | 1986-04-07 | 1987-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Solid lubricant film having high hardness and formation thereof |
| US4806900A (en) * | 1986-09-26 | 1989-02-21 | Naoji Fujimori | Thermistor and method for producing the same |
-
1989
- 1989-02-15 JP JP1037166A patent/JPH02217397A/en active Pending
-
1990
- 1990-02-12 GB GB9003085A patent/GB2228949B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62235393A (en) * | 1986-04-07 | 1987-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Solid lubricant film having high hardness and formation thereof |
| US4806900A (en) * | 1986-09-26 | 1989-02-21 | Naoji Fujimori | Thermistor and method for producing the same |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0518532A1 (en) * | 1991-05-29 | 1992-12-16 | De Beers Industrial Diamond Division (Proprietary) Limited | Boron-doped diamond |
| DE19643550A1 (en) * | 1996-10-24 | 1998-05-14 | Leybold Systems Gmbh | Light-transparent, heat radiation reflecting layer system |
| US5976683A (en) * | 1996-10-24 | 1999-11-02 | Leybold Systems Gmbh | Coating system transparent to light and reflecting thermal radiation |
| US7560086B2 (en) | 1998-05-15 | 2009-07-14 | Apollo Diamond, Inc. | Single crystal diamond having 12C, 13C, and phosphorous |
| US6858080B2 (en) | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
| US7201886B2 (en) | 1998-05-15 | 2007-04-10 | Apollo Diamond, Inc. | Single crystal diamond tool |
| US7258741B2 (en) | 1998-05-15 | 2007-08-21 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US7459024B2 (en) | 1998-05-15 | 2008-12-02 | Apollo Diamond, Inc. | Method of forming an N-type doped single crystal diamond |
| US7942966B2 (en) | 1998-05-15 | 2011-05-17 | Apollo Diamond, Inc. | Method of growing boron doped single crystal diamond in a plasma reactor |
| US8187380B2 (en) | 1998-05-15 | 2012-05-29 | Apollo Diamond, Inc | Method of growing single crystal diamond in a plasma reactor |
| US8591856B2 (en) | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
| EP1036863A4 (en) * | 1998-07-07 | 2002-11-27 | Japan Science & Tech Corp | LOW-STRENGTH TYPE N DIAMOND SYNTHESIS PROCESS |
| WO2003014427A1 (en) * | 2001-08-08 | 2003-02-20 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US8986645B2 (en) | 2003-12-12 | 2015-03-24 | Element Six Limited | Diamond |
| CN118039466A (en) * | 2024-04-12 | 2024-05-14 | 山东大学 | Composite substrate with Si-doped diamond modified layer and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9003085D0 (en) | 1990-04-11 |
| JPH02217397A (en) | 1990-08-30 |
| GB2228949B (en) | 1993-06-30 |
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