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GB2228745B - Process for the selective deposition of thin diamond film by gas phase synthesis - Google Patents

Process for the selective deposition of thin diamond film by gas phase synthesis

Info

Publication number
GB2228745B
GB2228745B GB9000473A GB9000473A GB2228745B GB 2228745 B GB2228745 B GB 2228745B GB 9000473 A GB9000473 A GB 9000473A GB 9000473 A GB9000473 A GB 9000473A GB 2228745 B GB2228745 B GB 2228745B
Authority
GB
United Kingdom
Prior art keywords
gas phase
phase synthesis
diamond film
selective deposition
thin diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9000473A
Other versions
GB9000473D0 (en
GB2228745A (en
Inventor
Takayoshi Inoue
Hiroyuki Tachibana
Akimitsu Nakaue
Kazuo Kumagai
Koichi Miyata
Koji Kobashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP409289A external-priority patent/JPH02184598A/en
Priority claimed from JP32225989A external-priority patent/JP2690796B2/en
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of GB9000473D0 publication Critical patent/GB9000473D0/en
Publication of GB2228745A publication Critical patent/GB2228745A/en
Application granted granted Critical
Publication of GB2228745B publication Critical patent/GB2228745B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P14/6902—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H10P14/24—
    • H10P14/271—
    • H10P14/272—
    • H10P14/2901—
    • H10P14/2905—
    • H10P14/2925—
    • H10P14/3406—
    • H10P14/6336—
    • H10P14/69215—
    • H10P14/69433—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB9000473A 1989-01-10 1990-01-09 Process for the selective deposition of thin diamond film by gas phase synthesis Expired - Fee Related GB2228745B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP409289A JPH02184598A (en) 1989-01-10 1989-01-10 Selective film formation of diamond through vapor synthesis
JP32225989A JP2690796B2 (en) 1989-12-11 1989-12-11 Selective formation method of vapor phase synthetic diamond thin film

Publications (3)

Publication Number Publication Date
GB9000473D0 GB9000473D0 (en) 1990-03-07
GB2228745A GB2228745A (en) 1990-09-05
GB2228745B true GB2228745B (en) 1993-09-08

Family

ID=26337810

Family Applications (3)

Application Number Title Priority Date Filing Date
GB9000473A Expired - Fee Related GB2228745B (en) 1989-01-10 1990-01-09 Process for the selective deposition of thin diamond film by gas phase synthesis
GB9224173A Expired - Fee Related GB2260341B (en) 1989-01-10 1992-11-18 Process for the selective deposition of thin diamond film by chemical vapour deposition
GB9224174A Expired - Fee Related GB2260342B (en) 1989-01-10 1992-11-18 Process for the selective deposition of thin diamond film by chemical vapour deposition

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB9224173A Expired - Fee Related GB2260341B (en) 1989-01-10 1992-11-18 Process for the selective deposition of thin diamond film by chemical vapour deposition
GB9224174A Expired - Fee Related GB2260342B (en) 1989-01-10 1992-11-18 Process for the selective deposition of thin diamond film by chemical vapour deposition

Country Status (1)

Country Link
GB (3) GB2228745B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9103691D0 (en) * 1991-02-21 1991-04-10 De Beers Ind Diamond Radiation absorbers
FR2675947A1 (en) * 1991-04-23 1992-10-30 France Telecom PROCESS FOR LOCAL PASSIVATION OF A SUBSTRATE BY A HYDROGEN AMORPHOUS CARBON LAYER AND METHOD FOR MANUFACTURING THIN FILM TRANSISTORS ON THE PASSIVE SUBSTRATE.
CA2072326A1 (en) * 1991-08-08 1993-02-09 Charles D. Iacovangelo Method for selective cvd diamond deposition
JP2924989B2 (en) * 1992-01-28 1999-07-26 日本特殊陶業株式会社 Diamond film-coated silicon nitride base member and method of manufacturing the same
US5729074A (en) * 1994-03-24 1998-03-17 Sumitomo Electric Industries, Ltd. Micro mechanical component and production process thereof
GB9513426D0 (en) * 1995-06-29 1997-03-12 Diamanx Products Ltd Diamond treatment
KR0151165B1 (en) * 1996-04-12 1998-10-15 문정환 Diamond micromachining method
JP3449459B2 (en) * 1997-06-02 2003-09-22 株式会社ジャパンエナジー Method for manufacturing member for thin film forming apparatus and member for the apparatus
KR20140088585A (en) 2011-10-28 2014-07-10 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. Devices including a diamond layer
JP6679022B2 (en) 2016-02-29 2020-04-15 信越化学工業株式会社 Diamond substrate manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278710A (en) * 1979-08-27 1981-07-14 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for submicron pattern generation
JPS62297298A (en) * 1986-06-16 1987-12-24 Kobe Steel Ltd Vapor-phase synthesis of diamond

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278710A (en) * 1979-08-27 1981-07-14 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for submicron pattern generation
JPS62297298A (en) * 1986-06-16 1987-12-24 Kobe Steel Ltd Vapor-phase synthesis of diamond

Also Published As

Publication number Publication date
GB9000473D0 (en) 1990-03-07
GB2260342B (en) 1993-09-08
GB2260341A (en) 1993-04-14
GB2260342A (en) 1993-04-14
GB2260341B (en) 1993-09-08
GB2228745A (en) 1990-09-05
GB9224174D0 (en) 1993-01-06
GB9224173D0 (en) 1993-01-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20030109