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GB2215123B - Improvement in integrated circuits - Google Patents

Improvement in integrated circuits

Info

Publication number
GB2215123B
GB2215123B GB8803505A GB8803505A GB2215123B GB 2215123 B GB2215123 B GB 2215123B GB 8803505 A GB8803505 A GB 8803505A GB 8803505 A GB8803505 A GB 8803505A GB 2215123 B GB2215123 B GB 2215123B
Authority
GB
United Kingdom
Prior art keywords
improvement
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8803505A
Other versions
GB8803505D0 (en
GB2215123A (en
Inventor
Robert William Hunt
John Michael Young
Roger Leslie Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8803505A priority Critical patent/GB2215123B/en
Publication of GB8803505D0 publication Critical patent/GB8803505D0/en
Priority to EP19880310302 priority patent/EP0316104A3/en
Publication of GB2215123A publication Critical patent/GB2215123A/en
Application granted granted Critical
Publication of GB2215123B publication Critical patent/GB2215123B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
GB8803505A 1987-11-03 1988-02-16 Improvement in integrated circuits Expired - Fee Related GB2215123B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB8803505A GB2215123B (en) 1988-02-16 1988-02-16 Improvement in integrated circuits
EP19880310302 EP0316104A3 (en) 1987-11-03 1988-11-02 Integrated circuits comprising resistors and bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8803505A GB2215123B (en) 1988-02-16 1988-02-16 Improvement in integrated circuits

Publications (3)

Publication Number Publication Date
GB8803505D0 GB8803505D0 (en) 1988-03-16
GB2215123A GB2215123A (en) 1989-09-13
GB2215123B true GB2215123B (en) 1990-10-24

Family

ID=10631767

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8803505A Expired - Fee Related GB2215123B (en) 1987-11-03 1988-02-16 Improvement in integrated circuits

Country Status (1)

Country Link
GB (1) GB2215123B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291328A (en) * 1979-06-15 1981-09-22 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
EP0037103A1 (en) * 1980-03-31 1981-10-07 Kabushiki Kaisha Toshiba Semiconductor device
US4370798A (en) * 1979-06-15 1983-02-01 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
GB2110470A (en) * 1981-11-27 1983-06-15 Hughes Aircraft Co Polycrystalline semiconductor resistor
EP0097595A2 (en) * 1982-06-21 1984-01-04 Fairchild Semiconductor Corporation Static RAM cell
EP0100676A2 (en) * 1982-08-02 1984-02-15 Fujitsu Limited Resistors in semiconductor devices
US4579600A (en) * 1983-06-17 1986-04-01 Texas Instruments Incorporated Method of making zero temperature coefficient of resistance resistors
US4682402A (en) * 1983-05-16 1987-07-28 Nec Corporation Semiconductor device comprising polycrystalline silicon resistor element

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291328A (en) * 1979-06-15 1981-09-22 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
US4370798A (en) * 1979-06-15 1983-02-01 Texas Instruments Incorporated Interlevel insulator for integrated circuit with implanted resistor element in second-level polycrystalline silicon
EP0037103A1 (en) * 1980-03-31 1981-10-07 Kabushiki Kaisha Toshiba Semiconductor device
GB2110470A (en) * 1981-11-27 1983-06-15 Hughes Aircraft Co Polycrystalline semiconductor resistor
EP0097595A2 (en) * 1982-06-21 1984-01-04 Fairchild Semiconductor Corporation Static RAM cell
EP0100676A2 (en) * 1982-08-02 1984-02-15 Fujitsu Limited Resistors in semiconductor devices
US4682402A (en) * 1983-05-16 1987-07-28 Nec Corporation Semiconductor device comprising polycrystalline silicon resistor element
US4579600A (en) * 1983-06-17 1986-04-01 Texas Instruments Incorporated Method of making zero temperature coefficient of resistance resistors

Also Published As

Publication number Publication date
GB8803505D0 (en) 1988-03-16
GB2215123A (en) 1989-09-13

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee