GB2208875A - Depositing surface layers using ion beans - Google Patents
Depositing surface layers using ion beans Download PDFInfo
- Publication number
- GB2208875A GB2208875A GB8819752A GB8819752A GB2208875A GB 2208875 A GB2208875 A GB 2208875A GB 8819752 A GB8819752 A GB 8819752A GB 8819752 A GB8819752 A GB 8819752A GB 2208875 A GB2208875 A GB 2208875A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- ion
- source
- chamber
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002344 surface layer Substances 0.000 title claims description 11
- 238000000151 deposition Methods 0.000 title abstract description 17
- 235000010627 Phaseolus vulgaris Nutrition 0.000 title 1
- 244000046052 Phaseolus vulgaris Species 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 150000002500 ions Chemical class 0.000 claims abstract description 35
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 12
- 239000007787 solid Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000010949 copper Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012298 atmosphere Substances 0.000 abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 229910052712 strontium Inorganic materials 0.000 abstract description 3
- 229910000831 Steel Inorganic materials 0.000 abstract description 2
- 229910052788 barium Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 239000010959 steel Substances 0.000 abstract description 2
- 239000002887 superconductor Substances 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- 229910002264 La1.85Sr0.15CuO4 Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910001427 strontium ion Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Apparatus which may be used to form on a substrate a layer containing two or more elemental or molecular components as illustrated in the figure comprises a reduced-pressure chamber 1, vacuum means for reducing the pressure in the chamber, a support in the chamber for the substrate, a plurality of ion sources 3, 4, 5 and a beam-controlling lens, which may be a magnetic or an electrostatic lens, for each ion source 9, 10, 11, to direct and focus the ion beams on to a common zone of the substrate. Single or multiple layered products may be produced using this apparatus. The ion source may be a solid source of ions, a plasma source, a Freeman source or a saddle source. The apparatus may include a laser unit 12 which produces a laser beam which is used to modify the crystal structure of the depositing layer or to etch the deposited material after its formation. The lenses may have ion accelerating facilities and the substrate may be given an electrical bias. The apparatus may be adapted to feed a continuous substrate therethrough. The ion beams may trace a path over the surface of a fixed substrate. The specific examples describe the formation of layers comprising the elements La, Sr, Cu and oxygen in different proportions (La1.85Sr0.15CuO4) using sources of La, Sr, and Cu ions in an oxygen atmosphere and layers containing the elements Y, Ba, Cu and O which function as superconductors. The substrate may be flat steel or copper wire. <IMAGE>
Description
Apparatus and Method for Depositing
Surface Layers on Substrates.
The present invention is concerned with the deposition of surface layers on substrates and comprises apparatus and a method for that purpose. It is particularly suitable for the deposition of layers consisting of alloys or other combinations of two or irore elements.
Surface layers may be applied to substrates for a range of different purposes where the objective is to enhance the surface properties of the substrate. Among such purposes is to increase the hardness and/or the wear-resistance or corrosionresistance of the substrate or simply to modify its appearance.
A wide range of materials may be deposited, including metals and their alloys and a variety of chemical compounds including oxides, nitrides and mixtures of compounds. To effect deposition of these diverse materials for different purposes, a variety of processes and associated apparatus have been developed.
By way of example, a layer of titanium nitride may be formed by generating titsni#rn ions in a nitrogen atmosphere so as to produce titanium nitride will the surface of the substrate.
In an alternative process, the material to be deposited is produced within the deposition chamber at a very high temperature by dissociation of the appropriate gaseous reactants, the new product thus formed by chemical reaction being subsequently deposited on the chosen substrate.
While presently available deposition processes have many advantages, which differ from one process to another, they also suffer fratn various limitations. For example, when it is desired to deposit a layer comprising two or more oumponents, very tight control of all process variables is essential for some processes if a layer of the desired composition is to be reliably and consistently produced.
It is an object of the present invention to provide an improved apparatus and method for depositing surface layers on substrates, whereby some at least of the disadvantages and/or limitations of existing such apparatus and methods may be reduced or eliminated, in particular in the deposition of layers containing two or more elemental or molecular components.
The apparatus according to the invention caprices a chamber adapted to sustain a substantially reduced pressure therein, vacuum means for reducing the pressure in said chamber, a support within the chamber for a substrate upon which the surface layer is to be deposited, a plurality of ion sources and a plurality of beam-controlling lenses, each lens being disposed to direct a beam of ions from one of said ion sources on to a common zone of the surface of a substrate upon said support.
The process according to the invention, for forming upon the surface of a substrate a layer containing two or more elemental or molecular con}cnents, comprises generating a plurality of berms, each consisting of different ions, and directing said ion beams simultaneously to a common zone of the surface of said substrate.
It will be seen that an important characteristic feature of the apparatus and method according to the present invention is the simultaneous arrival at or adjacent to the substrate surface of ions from at least two difference sources, the different ions being the components which together make up the desired deposited surface layer. Thus reaction to form a coating compound or compounds, or mixing to form an alloy layer, occurs wholly or largely in the region adjacent to the substrate surface.Not only does this make it possible to carry out the deposition under high vacuum rather than within a gaseous ah~sphere, it also affords maximum facility for controlling, and indeed varying, the composition of the deposited layer.
Although the apparatus of the present invention includes a plurality of ion sources and associated lenses, it may, of course, still be used when desired to deposit ions of a single species, when a single-cczDDnent layer is required. In the same way, although the apparatus has the facility for carrying out deposition under high vacuum, it may still be operated with a gaseous atmosphere, especially a low-pressure atmosphere, within the deposition chamber, for example when it is desired to supply one of the components of the layer in the form of a gaseous reactant.
The ion sources which are a feature of the apparatus of the invention may tak~ many different forms. Such sources include solid sources of ions such as the arc source and also include plasma sources, Freeman sources and saddle sources. The sources employed in a given apparatus may be of the same or different types. For example, at least one component of the layer may be derived from a solid ion source and at least one from a gaseous source.
For each ion source, a separate lens system is provided, to direct the associated ion beam on to the substrate. lenses for this purpose are of magnetic and/or electrostatic type, by means of which the ions in the beam are accelerated or diverted and the beam is directed or focused. In general, it is highly desirable to include an ion accelerating facility in each lens system, not only because accelerated ions tend to yield better structural characteristics in the resulting surface layer but also because a facility for varying the energy of the ions by varying the acceleration applied affords greatly inprcved control over the deposition process generally.
The lens systems preferably also include features for focusing the beams on to a closely-defined area of the substrate, although the size of the area will vary depending upon the nature and intended function of the surface layer being produced. For example, if the layer is to form a narrow conducting path as a part of a microelectronic component, then the beams may need to be focused to a fine point on the surface of the substrate.
The combined beams may then trace a desired path over the substrate surface, either by moving the substrate, for example continuously over a linear path within or through the deposition chamber, or by diverting the beams in a predetermined controlled way over a stationary or moving substrate. As an alternative, it may be desired to form a layer over a less tightly defined area or indeed over the whole exposed surface of an article forming the substrate. In such circumstances precise focusing of the ion beams may be unnecessary or undesirable. If this is the case, then a conductive substrate may be given an electrical bias to attract ions in the beams to the substrate surface.
In yet another possible application, a laser may be included in the apparatus, whereby a laser beam may be directed on to the substrate surface, to influence the properties of the layer during its formation or selectively to remove by vaporisation selected parts of the layer when it has been formed.
The use of a plurality of separate ion sources, especially in omibination with accelerator features of the lens systems, gives a high degree of control over the composition and other characteristics of the surface layer formed. Not only is it possible to set in adzuice with a high degree of precision the composition of the deposited layer; it is also possible to vary, uniformly or in steps, the composition of the layer either across the substrate surface or through the thickness of the layer in a direction perpendicular to the substrate surface.
The substrate itself may take any manageable form. Thus it may be one or more discrete articles remainIng stationary in a vacuum chamber throughout the deposition operation.
Equally, the invention lends itself to the deposition of a layer in a continuous operation upon a continuous substrate, for example a tape, wire or rod. The latter type of substrate may be fed continuously into and out of the deposition chamber through suitable vacuum seals, or the vacuum may be maintained in the chamber by differential pumping. Such a continuous substrate may be subjected to further continuous treatment in a subsequent operation; for example it may pass fran the deposition chamber to a machine for providing a continuous sheath about the article or for drawing or otherwise shaping the product.
It will be seen that the apparatus and met'nod according to the invention may be used to produce a very wide range of products.
Among many other possibilities, it is suitable for the formation of single or laminated layers of alloys of metals and alloys of other compounds, for example upon wire substrates or upon non-oonductive supports. One particular application envisaged is the formation of alloys of mixed oxides of alkaline earth and/or transition metals upon wire substrates, e.g. of copper, to form a product functiai:ng as a superconductor.
The invention will nova be further described and exemplified with reference to the accopanying drawing, which illustrates in a highly schematic form one embodiment of the apparatus according to the invention.
Referring to the drawing, the illustrated apparatus comprises a vacuum chamber 1 in the form of an extended cylindrical pressure vessel seen in radial cross-section. An elongated substrate 2 in the form of a flat tape passes axially through the chamber 1, entering and leaving the chamber through aligned vacuum seals (not shown). Three separate ion sources 3, 4 and 5 are individually linked to the chamber 1 by beam tubes 6, 7 and 8 respectively.
The ion beams generated in the ion sources each pass through a magnetic or electrostatic lens (9, 10 and 11 respectively), by means of which the beams are accelerated and focused upon a osmman point on the surface of the substrate 2, at which point the beams converge and the ions combine and form a layer on the substrate.
The box designated by the reference numeral 12 signifies a laser unit, which is an optional feature of the apparatus and which in selected applications may be employed to produce a laser beam, either directed at the point on the substrate upon which the ion beams are focused (to modify the crystal structure of the layer as it is formed) or used to etch or otherwise selectively remove the deposited layer after its formation.
The invention is further illustrated by means of the following Examples,which describe one #td#rrent of the process according to the invention.
EKarr#p1es In the apparatus illustrated in the drawing, layers comprising the elements lanthanum, strontium, copper and oxygen in different proportions were formed upon several substrates, each in the form of a flat steel substrate. In each case, the lanthanum, strontium and copper ions were produced in arc evaporators using the elements in the form of solid discs. An oxygen atmosphere at a pressure lying within the range from 10 -4 to 5 x 10-2 millibar was maintained in the vacuum chamber. The substrate was maintained at a negative potential of 0 to 800 volts with respect to the chamber, the voltage being varied during the formation of the layer to keep the temperature of the substrate below a preselected upper value in the range from 400 to 1000 C.
In one specific example, in which the oxygen pressure was maintained at 10-3 millibar, the negative potential on the substrate was initially 200 volts and was varied to keep the temperature of the substrate below 400 C. A layer of an alloy having a composition corresponding to the empirical formula La.1.85 Sr0.15 Cu 04 was Cbtaied.
In further analogous examples, layers were produced containing the elements yttrium, barium, copper and oxygen.
Claims (16)
1. Apparatus for forming upon the surface of a substrate a layer containing two or more elemental or molecular components, which apparatus comprises a chamber adapted to sustain a substantially reduced pressure therein, vacuum means for reducing the pressure in said chamber, a support within the chamber for a substrate upon which the surface layer is to be deposited, a plurality of ion sources and a plurality of beam-controlling lenses, each lens being disposed to direct a beam of ions from one of said ion sources on to a commDn zone of the surface of a substrate upon said support.
2. Apparatus as claimed in claim 1, wherein each ion source comprises a solid source of ions, a plasma source, a Freeman source or a saddle source.
3. Apparatus as claimed in either of the preceding claims, wherein each lens is a magnetic or an electrostatic lens.
4. Apparatus as claimed in any of the preceding claims, wherein each lens incloses an ion accelerating facility.
5. Apparatus as claimed in any of the preceding claims, wherein each lens is adapted to focus the associated ion beam to a closelydefined area of the substrate.
6. Apparatus as claimed in any of the preceding claims, including means to effect relative movement of the ion beams and the substrate.
7. Apparatus Rs claimed in any of the preceding claims, including a ~2ser adapted to direct a laser beam on to the surface of a substrate upon the support.
8. Apparatus as claimed in any of the preceding claims, including mEans to feed a continuous substrate through said chamber.
9. A process for forming upon the surface of a substrate a layer containing two or itore elemental or molecular components, which process comprises generating a plurality of beams, each consisting of different ions, and directing said ion beams simdltaneously to a ooooon zone of the surface of the substrate.
10. A process as claimed in claim 9, wherein the ion beams together trace a path over the surface of a fixed substrate.
11. A process as claimed in claim 9, wherein the substrate is moved continuously through said ion beams.
12. A process as claimed in claim 11, wherein the substrate is subjected to further continuous treatment in a subsequent operation.
13. A process as claimed in any of claims 9 to 12, wherein the substrate is electrically conductive and is given an electrical bias.
14. A process as claimed in any of claims 9 to 13, wherein a laser beam is directed on to the substrate surface during or subsequent to the forming of the layer thereon.
15. Apparatus for forming upon the surface of a substrate a layer containing two or rttre elemental or molecular components, said apparatus being substantially as hereinbefore described with reference to, and as illustrated in, the accoçanying drawing.
16. A process for forming upon the surface of a substrate a layer containing two or mDre elemental or molecul@r components, said process being substantially as hereinbefore described in the foregoing Example.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB878719794A GB8719794D0 (en) | 1987-08-21 | 1987-08-21 | Depositing surface layers on substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8819752D0 GB8819752D0 (en) | 1988-09-21 |
| GB2208875A true GB2208875A (en) | 1989-04-19 |
Family
ID=10622612
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB878719794A Pending GB8719794D0 (en) | 1987-08-21 | 1987-08-21 | Depositing surface layers on substrates |
| GB8819752A Withdrawn GB2208875A (en) | 1987-08-21 | 1988-08-19 | Depositing surface layers using ion beans |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB878719794A Pending GB8719794D0 (en) | 1987-08-21 | 1987-08-21 | Depositing surface layers on substrates |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB8719794D0 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658389A (en) * | 1989-06-29 | 1997-08-19 | Kabushiki Kaisha Toshiba | Thin film forming method and apparatus |
| US5776253A (en) * | 1993-10-14 | 1998-07-07 | Neuralsystems Corporation | Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device |
| US5797987A (en) * | 1995-12-14 | 1998-08-25 | Ppg Industries, Inc. | Zinc phosphate conversion coating compositions and process |
| RU2120680C1 (en) * | 1996-07-29 | 1998-10-20 | Институт ядерной физики СО РАН | Method for implanting particles in solid body |
| WO2001061066A1 (en) * | 2000-02-17 | 2001-08-23 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
| RU2264480C2 (en) * | 2000-04-10 | 2005-11-20 | Падеров Анатолий Николаевич | Method of deposition of protective coatings on details made out of refractory alloys |
| US7229675B1 (en) | 2000-02-17 | 2007-06-12 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115572950B (en) * | 2022-10-14 | 2024-07-16 | 苏州岚创科技有限公司 | Multi-ion source synchronous sputtering coating device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1089967A (en) * | 1964-12-28 | 1967-11-08 | Hermsdorf Keramik Veb | Improvements in or relating to arrangements for the manufacture of electronic components comprising thin films |
| US4346301A (en) * | 1979-07-30 | 1982-08-24 | Hughes Aircraft Company | Ion implantation system |
| EP0061906A1 (en) * | 1981-03-26 | 1982-10-06 | Inoue-Japax Research Incorporated | A method of, and an apparatus for, processing a workpiece with energetic particles and a product processed thereby |
| EP0062818A1 (en) * | 1981-03-30 | 1982-10-20 | Asahi Kasei Kogyo Kabushiki Kaisha | Process of producing a Hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor |
| EP0107356A2 (en) * | 1982-09-23 | 1984-05-02 | Energy Conversion Devices, Inc. | Compositionally varied materials and method and system for synthesizing the materials |
| GB2144151A (en) * | 1983-07-27 | 1985-02-27 | American Telephone & Telegraph | Method of selective area epitaxial growth |
| WO1987000966A1 (en) * | 1985-08-07 | 1987-02-12 | The Commonwealth Of Australia | Control of uniformity of growing alloy film |
| GB2181747A (en) * | 1985-09-11 | 1987-04-29 | Sharp Kk | A molecular beam epitaxial growth apparatus |
| WO1987002713A1 (en) * | 1985-10-31 | 1987-05-07 | Ncr Corporation | A method for forming an abrasion resistant coating on a transparent substrate |
| GB2194555A (en) * | 1986-07-31 | 1988-03-09 | Nippon Telegraph & Telephone | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
-
1987
- 1987-08-21 GB GB878719794A patent/GB8719794D0/en active Pending
-
1988
- 1988-08-19 GB GB8819752A patent/GB2208875A/en not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1089967A (en) * | 1964-12-28 | 1967-11-08 | Hermsdorf Keramik Veb | Improvements in or relating to arrangements for the manufacture of electronic components comprising thin films |
| US4346301A (en) * | 1979-07-30 | 1982-08-24 | Hughes Aircraft Company | Ion implantation system |
| EP0061906A1 (en) * | 1981-03-26 | 1982-10-06 | Inoue-Japax Research Incorporated | A method of, and an apparatus for, processing a workpiece with energetic particles and a product processed thereby |
| EP0062818A1 (en) * | 1981-03-30 | 1982-10-20 | Asahi Kasei Kogyo Kabushiki Kaisha | Process of producing a Hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor |
| EP0107356A2 (en) * | 1982-09-23 | 1984-05-02 | Energy Conversion Devices, Inc. | Compositionally varied materials and method and system for synthesizing the materials |
| GB2144151A (en) * | 1983-07-27 | 1985-02-27 | American Telephone & Telegraph | Method of selective area epitaxial growth |
| WO1987000966A1 (en) * | 1985-08-07 | 1987-02-12 | The Commonwealth Of Australia | Control of uniformity of growing alloy film |
| GB2181747A (en) * | 1985-09-11 | 1987-04-29 | Sharp Kk | A molecular beam epitaxial growth apparatus |
| WO1987002713A1 (en) * | 1985-10-31 | 1987-05-07 | Ncr Corporation | A method for forming an abrasion resistant coating on a transparent substrate |
| GB2194555A (en) * | 1986-07-31 | 1988-03-09 | Nippon Telegraph & Telephone | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
Non-Patent Citations (1)
| Title |
|---|
| WO87/00966 A1 is equivalent to GB2192902 A * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658389A (en) * | 1989-06-29 | 1997-08-19 | Kabushiki Kaisha Toshiba | Thin film forming method and apparatus |
| US5776253A (en) * | 1993-10-14 | 1998-07-07 | Neuralsystems Corporation | Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device |
| US5795385A (en) * | 1993-10-14 | 1998-08-18 | Neuralsystems Corporation | Method of forming single-crystalline thin film by beam irradiator |
| US6032611A (en) * | 1993-10-14 | 2000-03-07 | Neuralsystems Corporation | Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device |
| US5797987A (en) * | 1995-12-14 | 1998-08-25 | Ppg Industries, Inc. | Zinc phosphate conversion coating compositions and process |
| RU2120680C1 (en) * | 1996-07-29 | 1998-10-20 | Институт ядерной физики СО РАН | Method for implanting particles in solid body |
| WO2001061066A1 (en) * | 2000-02-17 | 2001-08-23 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
| US7229675B1 (en) | 2000-02-17 | 2007-06-12 | Anatoly Nikolaevich Paderov | Protective coating method for pieces made of heat resistant alloys |
| RU2264480C2 (en) * | 2000-04-10 | 2005-11-20 | Падеров Анатолий Николаевич | Method of deposition of protective coatings on details made out of refractory alloys |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8819752D0 (en) | 1988-09-21 |
| GB8719794D0 (en) | 1987-09-30 |
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