GB2208119B - Method and structure for achieving low contact resistance to aluminum and its alloys - Google Patents

Method and structure for achieving low contact resistance to aluminum and its alloys

Info

Publication number: GB2208119B
Authority: GB; United Kingdom
Prior art keywords: alloys; aluminum; contact resistance; low contact; achieving low
Prior art date: 1987-06-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

GB8812936A

Other versions

GB8812936D0 (en

GB2208119A (en

Inventor

Ronald Harvey Wilson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

General Electric Co

Original Assignee

General Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-01

Filing date

1988-06-01

Publication date

1992-01-15

1988-06-01 Application filed by General Electric Co filed Critical General Electric Co

1988-07-06 Publication of GB8812936D0 publication Critical patent/GB8812936D0/en

1989-03-01 Publication of GB2208119A publication Critical patent/GB2208119A/en

1992-01-15 Application granted granted Critical

1992-01-15 Publication of GB2208119B publication Critical patent/GB2208119B/en

2008-06-01 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H10W20/056—

GB8812936A 1987-06-01 1988-06-01 Method and structure for achieving low contact resistance to aluminum and its alloys Expired - Lifetime GB2208119B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US5651087A	1987-06-01	1987-06-01

Publications (3)

Publication Number	Publication Date
GB8812936D0 GB8812936D0 (en)	1988-07-06
GB2208119A GB2208119A (en)	1989-03-01
GB2208119B true GB2208119B (en)	1992-01-15

Family

ID=22004882

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8812936A Expired - Lifetime GB2208119B (en)	1987-06-01	1988-06-01	Method and structure for achieving low contact resistance to aluminum and its alloys

Country Status (4)

Country	Link
JP (1)	JP2798250B2 (en)
DE (1)	DE3818509A1 (en)
FR (1)	FR2620860B1 (en)
GB (1)	GB2208119B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR930000309B1 (en) *	1989-11-22	1993-01-15	삼성전자 주식회사	Manufacturing method of semiconductor device
US5032233A (en) *	1990-09-05	1991-07-16	Micron Technology, Inc.	Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point metal as an anti-reflective coating during laser planarization
JPH04346231A (en) *	1991-05-23	1992-12-02	Canon Inc	Manufacture of semiconductor device
US7361581B2 (en)	2004-11-23	2008-04-22	International Business Machines Corporation	High surface area aluminum bond pad for through-wafer connections to an electronic package
US20060131700A1 (en) *	2004-12-22	2006-06-22	David Moses M	Flexible electronic circuit articles and methods of making thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1596907A (en) *	1978-05-25	1981-09-03	Fujitsu Ltd	Manufacture of semiconductor devices
EP0143652A2 (en) *	1983-11-28	1985-06-05	Kabushiki Kaisha Toshiba	Process for forming multi-layer interconnections
EP0194109A2 (en) *	1985-02-28	1986-09-10	Kabushiki Kaisha Toshiba	Method for producing a semiconductor device using a chemical vapour deposition step
EP0319214A1 (en) *	1987-12-04	1989-06-07	AT&T Corp.	Method for making semiconductor integrated circuits using selective tungsten deposition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5918659A (en) *	1982-07-23	1984-01-31	Hitachi Ltd	How to form multilayer wiring
JPS5998535A (en) *	1982-11-29	1984-06-06	Hitachi Ltd	Manufacturing method of semiconductor integrated circuit
JPS59202651A (en) *	1983-05-04	1984-11-16	Hitachi Ltd	Forming method of multilayer interconnection
JPS60115221A (en) *	1983-11-28	1985-06-21	Toshiba Corp	Manufacture of semiconductor device
DE3684414D1 (en) *	1985-05-10	1992-04-23	Gen Electric	METHOD AND DEVICE FOR SELECTIVE CHEMICAL EVAPORATION.

1988
- 1988-05-31 DE DE3818509A patent/DE3818509A1/en not_active Withdrawn
- 1988-05-31 JP JP63134274A patent/JP2798250B2/en not_active Expired - Fee Related
- 1988-06-01 GB GB8812936A patent/GB2208119B/en not_active Expired - Lifetime
- 1988-06-01 FR FR888807310A patent/FR2620860B1/en not_active Expired - Fee Related

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1596907A (en) *	1978-05-25	1981-09-03	Fujitsu Ltd	Manufacture of semiconductor devices
EP0143652A2 (en) *	1983-11-28	1985-06-05	Kabushiki Kaisha Toshiba	Process for forming multi-layer interconnections
EP0194109A2 (en) *	1985-02-28	1986-09-10	Kabushiki Kaisha Toshiba	Method for producing a semiconductor device using a chemical vapour deposition step
EP0319214A1 (en) *	1987-12-04	1989-06-07	AT&T Corp.	Method for making semiconductor integrated circuits using selective tungsten deposition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEDM Technical Digest, Dec 5-7 1983, pages 550-553, *

Also Published As

Publication number	Publication date
JP2798250B2 (en)	1998-09-17
GB8812936D0 (en)	1988-07-06
GB2208119A (en)	1989-03-01
FR2620860B1 (en)	1994-07-29
JPH01308050A (en)	1989-12-12
FR2620860A1 (en)	1989-03-24
DE3818509A1 (en)	1988-12-22

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Legal Events

Date	Code	Title	Description
2004-01-21	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20030601