GB2204065A - Vapour deposited metal films for integrated circuit manufacture - Google Patents
Vapour deposited metal films for integrated circuit manufacture Download PDFInfo
- Publication number
- GB2204065A GB2204065A GB08702999A GB8702999A GB2204065A GB 2204065 A GB2204065 A GB 2204065A GB 08702999 A GB08702999 A GB 08702999A GB 8702999 A GB8702999 A GB 8702999A GB 2204065 A GB2204065 A GB 2204065A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- layer
- deposited
- metal film
- pseudoamorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 71
- 239000002184 metal Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 47
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010937 tungsten Substances 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 37
- 230000008569 process Effects 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 230000008021 deposition Effects 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 239000011733 molybdenum Substances 0.000 claims abstract description 11
- 238000001465 metallisation Methods 0.000 claims abstract description 8
- 230000006911 nucleation Effects 0.000 claims abstract description 5
- 238000010899 nucleation Methods 0.000 claims abstract description 5
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 238000005137 deposition process Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 150000001728 carbonyl compounds Chemical class 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 abstract description 8
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 13
- 230000012010 growth Effects 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000012799 electrically-conductive coating Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A process for forming a vapour deposited metal film of tungsten or molybdenum, the process comprising the steps of providing a substrate surface capable of supporting the required film, heating the substrate surface in a vapour deposition chamber, admitting a decomposable compound of the selected metal in vapour form to said chamber, decomposing said compound such that a film of the metal is deposited on said surface, interrupting said decomposition step when a predetermined thickness of said metal film has been formed, depositing a pseudoamorphous layer of the metal effective to provide new crystal nucleation centres on the previously deposited metal film, continuing the metal deposition until a further predetermined metal film thickness has been formed, interrupting the deposition process and removing the required substrate with metal film from said chamber. The pseudoamorphous layer may be produced by 1) deposition of silicon from a silicon-containing gas and contact with the metal compound vapour to replace the silicon layer with new metal deposition nuclei or 2) deposition from the metal carbonyl. Improves the surface roughness. <IMAGE>
Description
VAPOUR DEPQS1TED METAL FILMS
This invention relates to vapour deposited metal films. It relates particularly to films which are deposited by a chemical process and where the metals include tungsten and molybdenum.
In the construction of integrated circuit devices such as Very
Large Scale Integrated circuits it is necessary for a body of a substrate material to be given an electrically conductive coating.
Where the electrically conductive coating is to be formed of tungsten, it has been found that a low pressure chemical vapour deposition process using tungsten hexafluoride in the presence of hydrogen as a gaseous reducing agent is, in general, a satisfactory process to use. This process, however, can give significant surface roughness in the deposited film. This is due to the growth of preferred crystallographic facets which cause certain crystal planes to protrude above the average film thickness. Typically, a film one micrometre (1,000 nanometres) in thickness grown by this technique will have an average surface roughness of plus or minus 150 nanometres. Roughness of this order will cause a problem when the film is intended to be further processed for use as a conducting material in integrated circuit device construction.In particular, if the film is to be etched by an anisotropic process, the presence of the roughness dictates that a large overetch must be employed in order to clear etched areas thus exposing the lower layers to the etchant material and possibly causing serious damage. Also the effectiveness of optical lithographic techniques commonly used in integrated circuit processing can be severely compromised by the presence of rough, highly reflective metal surfaces.
The presence of a rough metal surface can also have electrical property implications since a severely rough metal surface will cause a degradation in the dielectric quality of an electrical insulation layer which is subsequently deposited on the metal surface.
An object of the present invention therefore is to improve the surface smoothness of vapour deposited tungsten and molybdenum films.
According to the invention, there is provided a process for forming a vapour deposited metal film of tungsten or molybdenum, the process comprising the steps of providing a substrate surface capable of supporting the required film, heating the substrate surface in a vapour deposition chamber, admitting a decomposable compound of the selected metal in vapour form to said chamber, decomposing said compound such that a film of the metal is deposited on said surface, interrupting said decomposition step when a predetermined thickness of said metal film has been formed, depositing a pseudoamorphous layer of the metal effective to provide new crystal nucleation centres on the previously deposited metal film, continuing the metal deposition until a further predetermined metal film thickness has been formed, interrupting the deposition process and removing the required substrate with metal film from said chamber.
Preferably, the pseudoamorphous layer is deposited by the steps of admitting a flow of a silicon containing gas to said chamber and decomposing said gas such that a silicon layer is deposited on said metal film, replacing said gas flow with the metal compound vapour such that the freshly deposited silicon layer is replaced with the metal thus forming new metal deposition nuclei on the previously deposited metal film.
In an alternative embodiment, the pseudoamorphous layer is deposited by the steps of admitting a flow of a carbonyl compound of the metal and decomposing this to form the pseudoamorphous layer.
In a further embodiment, the pseudoamorphous layer is deposited by the step of initiating a radiofrequency electrical discharge within the decomposable metal vapour compound atmosphere or within an atmosphere of a silicon containing gas in the chamber.
The step of depositing the pseudoamorphous layer before a further metal film layer may be repeated one or more times. The step of depositing the pseudoamorphous layer may be effected at the same temperature as that required to deposit the metal film.
The silicon containing gas may be silane or a polysilane such as disilane.
Conveniently, the deposition step is effected at a temperature of less than 5000 C, such as one between 400 and 425or.
Promotion of the pseudoamorphous layer deposition stage may be effected by radiofrequency electrical discharge means in the deposition chamber.
A particular embodiment of the present invention will now be described, by way of example, with reference to the accompanying drawing, in which;
Figure 1 is a cross-sectional view greatly enlarged showing a body of substrate material carrying a vapour deposited tungsten film,
Figure 2 is a similar view showing a film which has been treated to give a renucleated tungsten surface of greater smoothness, and,
Figure 3 is a schematic diagram of a tungsten-deposition apparatus for low pressure chemical vapour deposition.
The problem of the increased surface roughening that can occur with a chemical vapour deposit of tungsten can be seen in the crosssectional view of Figure 1. This Figure shows a silicon wafer substrate 1 which has been given a low pressure chemical vapour deposition coating 2 of tungsten in a single deposition stage of one hour duration. Initially, the upper surface of the substrate 1 is seen to be smooth but the body of tungsten as it is laid down on the substrate surface commences as a crystalline growth from a number of nucleation points. Different planes of the resulting crystals grow forward at different rates so that the initially smooth upper surface of the combination becomes increasingly more roughened as certain planes protrude above the average film thickness.
As depicted in the Figure, when the coating 2 has a thickness of about one micrometre the average surface roughness can be about 150 nanometres.
The process of the present invention in one embodiment makes use of a chemically deposited layer of silicon which is laid down on top of the tungsten coating 2. After this step, the further deposition of tungsten from the tungsten hexafluoride vapour will result in the silicon film chemically reducing the vapour to produce a pseudoamorphous tungsten deposit which thus has no particular tendency to promote crystal plane growth.
The silicon lying on the previously deposited tungsten surface will be spontaneously removed by the reduction process so that the coating 2 includes only the tungsten metal deposit that is required.
The pseudoamorphous tungsten deposit provides a suitable base for the further growth of tungsten since a surface that is capable of uniform growth has now been recreated.
Figure 2 shows a similar substrate 1 which has supported four tungsten deposition stages with intervening silicon deposition stages.
The total tungsten deposition time as with the embodiment of Figure 1 was one hour and the upper tungsten surface 3 is now seen to be very much smoother than that of Figure 1. After each silicon deposition stage, the pseudoamorphous tungsten growth which formed allowed new crystal growth to start from the upper surface and the crystals, at least initially, will be small so that the occurrence of fast growing crystal planes will be minimised. With further deposition of the tungsten film, the crystal planes will again resume their irregular growth pattern and the formation of a rough surface is again a possibility. The step of interrupting the tungsten deposition and laying down a temporary silicon deposit may thus be repeated as often as necessary until the required final thickness of the tungsten deposit has been achieved.
It will be noted that an initial film of tungsten is grown to the predetermined thickness by the reaction between tungsten hexafluoride (WF6) and hydrogen. A film of amorphous silicon is then deposited at the same temperature by the pyrolysis of disilane.
The tungsten deposition is then continued, the silicon being consumed by the reaction:
2WF6(g) + 3 Si(s) 3 Si F4(g) + 2W(s)
The thickness and uniformity of the silicon layer has been found not to be too critical provided that (a) sufficient tungsten is deposited by the chemical reaction just described in order to completely recreate a uniformly grossing surface, and (b) the silicon thickness is sufficiently thin to be totally consumed in this reaction. This implies a silicon thickness of 2-20 nanometres. Thus, the process is highly tolerant of poor uniformity control. The number of renucleation steps necessary is dependent on the final thickness required for the tungsten film and the required smoothness.In practice, it has been found sufficient to renucleate the surface every 250 nanometres thickness of tungsten grown in order to significantly improve the smoothness.
Figure 3 shows the tungsten deposition apparatus used for the experimental work. In this Figure, a horizontally disposed vapour deposition chamber 6 is depicted having a loading door assembly 7 and which is capable of being heated by resistance heater elements 8 under the control of a temperature controller 9. The deposition chamber 6 also includes a gas pressure sensor 11.
A gas flow supply for the deposition chamber 6 is provided through reactive gas lines 12 which are connected through a gas control system 13 to a tungsten hexafluoride (WF6) supply source 14.
Also provided is a disilane supply source 15. The control system 13 also controls supplies of argon from an argon source 16 and hydrogen from a hydrogen source 17. The hydrogen gas supply is delivered through a palladium diffuser 18 which serves to improve the purity of the hydrogen as it is delivered to the chamber 6.
A gas outlet from the deposition chamber 6 is connected through a vibration absorbing flexible hose 19 to a Roots blower 21 which is backed by a vacuum pump 22. A vacuum valve 23 is also provided.
In one example of use of the deposition apparatus, silicon wafers are cleaned by standard cleaning procedures and a layer approximately 100 nanometres in thickness of silicon dioxide is grown on the surface by thermal oxidation. An adhesion layer of titanium having a thickness of 100 nanometres is then applied by a
DC sputtering process. The resulting wafer bodies are then loaded into the deposition chamber 6 and heated to 4400C in a hydrogen gas ambient atmosphere at 400mTorr for thirty minutes.A tungsten film is then deposited by admitting a flow of 100 standard cubic centimetres per minute (sccm) of tungsten hexafluoride and one standard litre per minute (slm) of hydrogen at a pressure of 400mTorr and a temperature of 4400 C. This step is continued for twelve minutes after which the flow of gases is interrupted and the system is allowed to reach base pressure for one minute. Disilane - in a mixture with argon is then admitted at 50 sccm and a pressure of
SOOmTorr at the same temperature for a period of ten minutes. The flow of gases is then interrupted again and the system is allowed to reach base pressure for one minute. Further tungsten is then deposited using the conditions already described.
A total of four tungsten growth steps and three disilane growth steps are employed. The total thickness of the resulting tungsten film is 0.8 micrometres. The surface roughness was estimated from electron micrographs to be approximately 50 nanometres This value can be compared with that for a tungsten film deposited without the additional disilane steps for the same length of time. In this case, the film thickness was identical but the surface roughness was about 200 nanometres. There was no difference able to be measured in the electrical sheet resistance of the two differently produced types of film.
In a second example of use of the deposition apparatus, silicon wafers are prepared as before. They are heated to 4000C in a hydrogen gas ambient atmosphere at 450mTorr for one hour in a graphite plasma deposition boat of a design commonly used in the semiconductor industry. Tungsten is then deposited by conditions identical to those of the first example. After fifteen minutes, the flow of gases is interrupted and 200 sccm of silane (SiH < ) and 200 sccm of argon are admitted to the chamber at SOOmTorr. A radiofrequency electrical discharge is then applied through an electrode (not shown) which is located in the chamber 6. The electrical energy was supplied by means of a power supply generator (Advanced Energy Systems) providing one kilowatt of power for ten minutes.The silane supply is then removed and the tungsten deposition resumed.
A total of four tungsten growth steps and three silane growth steps yielded a tungsten film of 0.8 micrometre in thickness with a surface roughness of about 50 nanometres A control growth operation carried out without the silane plasma steps produced a surface roughness of about 200 nanometres.
The foregoing descriptions of embodiments of the invention have been given by way of example only and a number of modifications may be made without departing from the scope of the invention as defined in the appended claims. For instance, it is not essential that the metal film to be deposited should be tungsten and in an alternative embodiment the metal could, for example, be molybdenum. It may also be possible to deposit the pseudoamorphous layer by alternative means, for example from the metal carbonyl, that is M(CO)6, where M = W or Mo, or alternatively by a radiofrequency discharge of the metal hexafluoride in hydrogen.
Claims (11)
1. A process for forming a vapour deposited metal film of tungsten or molybdenum, the process comprising the steps of providing a substrate surface capable of supporting the required film, heating the substrate surface in a vapour deposition chamber, admitting a decomposable compound of the selected metal in vapour form to said chamber, decomposing said compound such that a film of the metal is deposited on said surface, interrupting said decomposition step when a predetermined thickness of said metal film has been formed, depositing a pseudoamorphous layer of the metal effective to provide new crystal nucleation centres on the previously deposited metal film, continuing the metal deposition until a further predetermined metal film thickness has been formed, interrupting the deposition process and removing the required substrate with metal film from said chamber.
2. A processs as claimed in Claim 1, in which the pseudoamorphous layer is deposited by the steps of admitting a flow of a silicon containing gas to said chamber and decomposing said gas such that a silicon layer is deposited on said metal film, replacing said gas flow with the metal compound vapour such that the freshly deposited silicon layer is replaced with the metal thus forming new metal deposition nuclei on the previously deposited metal film.
3. A process as claimed in Claim 1, in which the pseudoamorphous layer is deposited by the steps of admitting a flow of a carbonyl compound of the metal and decomposing this to form the pseudoamorphous layer.
4. A process as claimed in Claim 1, in which the pseudoamorphous layer is deposited by the step of initiating a radiofrequency electrical discharge within the decomposable metal vapour compound atmosphere or within an atmosphere of a silicon containing gas in the chamber.
5. A process as claimed in any one of Claims 1 to 4, in which the step of depositing said pseudoamorphous layer before a further metal film layer is repeated one or more times.
6. A process as claimed in any one of Claims 1 to 5, in which the step of depositing said pseudoamorphous layer is effected at the same temperature as that required to deposit the said metal film.
7. A process as claimed in Claim 2, in which the silicon containing gas is silane or a polysilane such as disilane.
8. A process as claimed in any one of Claims 1 to 7, in which the deposition step is effected at a temperature of less than 5000 C, such as one between 400 and 4250 C.
9. A process as claimed in any one of Claims 1 to 3 or 5 to 8, in which promotion of the pseudoamorphous layer deposition stage is effected by radiofrequency electrical discharge means in said chamber.
10. A process for forming a vapour deposited metal film of tungsten or molybdenum, substantially as hereinbefore described with reference to the accompanying drawing.
11. A vapour deposited metal film of tungsten or molybdenum, when formed by a process as claimed in any one of Claims 1 to 10.
11. A vapour deposited metal film of tungsten or molybdenum, when formed by a process as claimed in any one of Claims 1 to 10.
Amendments to the claims have been filed as follows
CLAIMS 1. A process for forming a vapour deposited metal film of high purity tungsten or molybdenum, the process comprising the steps of providing a substrate surface capable of supporting the required film, heating the substrate surface in a low pressure chemical vapour deposition chamber, admitting a decomposable compound of the selected metal in vapour form to said chamber, decomposing said compound such that a film of the metal is deposited on said surface, interrupting said decomposition step when a predetermined thickness of said metal film has been formed, depositing a p eudoamorphous layer of the metal effective to provide new crystal nucleation centres on the previously deposited metal film, continuing the metal deposition until a further predetermined metal film thickness has been formed, interrupting the deposition process and removing the required substrate with metal film from said chamber.
2. A process as claimed in Claim 1, in which the pseudoamorphous layer is deposited by the steps of admitting a flow of a silicon containing gas to said chamber and decomposing said gas such that a continuous silicon layer is deposited on said metal film, replacing said gas flow with the metal compound vapour such that the freshly deposited silicon layer is replaced with the metal thus forming new metal deposition nuclei on the previously deposited metal film.
3. A process as claimed in Claim 1, in which the pseudoamorphous layer is deposited by the steps of admitting a flow of a carbonyl compound of the metal and decomposing this to form the pseudoamorphous layer.
4. A process as claimed in Claim 1, in which the pseudoamorphous layer is deposited by the step of initiating a radiofrequency electrical discharge within the decomposable metal vapour compound atmosphere or within an atmosphere of a silicon containing gas in the chamber.
5. A process as claimed in any one of Claims 1 to 4, in which the step of depositing said pseudoamorphous layer before a further metal film layer is repeated one or more times.
6. A process as claimed in any one of Claims 1 to 5, in which the step of depositing said pseudoamorphous layer is effected at the same temperature as that required to deposit the said metal film.
7. A process as claimed in Claim 2, in which the silicon containing gas is silane or a polysilane such as disilane.
8. A process as claimed in any one of Claims 1 to 7, in which the deposition step is effected at a temperature of less than 5000 C, such as one between 400 and 4250C..
9. A process as claimed in any one of Claims 1 to 3 or 5 to 8, in which promotion of the pseudoamorphous layer deposition stage is effected by radiofrequency electrical discharge means in said chamber.
10. A process for forming a vapour deposited metal film of tungsten or molybdenum, substantially as hereinbefore described with reference to the accompanying drawing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08702999A GB2204065A (en) | 1987-02-10 | 1987-02-10 | Vapour deposited metal films for integrated circuit manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08702999A GB2204065A (en) | 1987-02-10 | 1987-02-10 | Vapour deposited metal films for integrated circuit manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8702999D0 GB8702999D0 (en) | 1987-03-18 |
| GB2204065A true GB2204065A (en) | 1988-11-02 |
Family
ID=10612024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08702999A Pending GB2204065A (en) | 1987-02-10 | 1987-02-10 | Vapour deposited metal films for integrated circuit manufacture |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2204065A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230142966A1 (en) * | 2021-11-10 | 2023-05-11 | Entegris, Inc. | Molybdenum precursor compounds |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1186892A (en) * | 1966-04-16 | 1970-04-08 | Philips Electronic Associated | Improvements in and relating to Methods of Providing Polycrystalline Layers |
-
1987
- 1987-02-10 GB GB08702999A patent/GB2204065A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1186892A (en) * | 1966-04-16 | 1970-04-08 | Philips Electronic Associated | Improvements in and relating to Methods of Providing Polycrystalline Layers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230142966A1 (en) * | 2021-11-10 | 2023-05-11 | Entegris, Inc. | Molybdenum precursor compounds |
| US12297531B2 (en) * | 2021-11-10 | 2025-05-13 | Entegris, Inc. | Methods of preparing molybdenum-containing films |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8702999D0 (en) | 1987-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1122766B1 (en) | Method and apparatus for enhanced chamber cleaning | |
| KR102158307B1 (en) | Plasma treatment process to improve in-situ chamber cleaning efficiency in plasma processing chamber | |
| US20050139578A1 (en) | Thin-film forming apparatus having an automatic cleaning function for cleaning the inside | |
| EP0671756B1 (en) | Plasma processing apparatus employing a textured focus ring | |
| US5759360A (en) | Wafer clean sputtering process | |
| JP3415207B2 (en) | Metal thin film formation method by chemical vapor deposition | |
| EP0630990A2 (en) | Method of limiting sticking of body to a susceptor in a deposition treatment | |
| US5510297A (en) | Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor | |
| EP0630989A2 (en) | Method of plasma chemical vapor deposition of layer with improved interface | |
| EP0418592B1 (en) | Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus | |
| JPH0697154A (en) | Selfcleaning method of reaction apparatus | |
| JP3112880B2 (en) | Cleaning method for CVD equipment | |
| JP2000260721A (en) | Chemical vapor deposition apparatus, chemical vapor deposition method, and cleaning method for chemical vapor deposition apparatus | |
| KR20010104260A (en) | Gas reactions to eliminate contaminates in a cvd chamber | |
| JPS621565B2 (en) | ||
| GB2204065A (en) | Vapour deposited metal films for integrated circuit manufacture | |
| TWI837677B (en) | Treatment for high-temperature cleans | |
| US20070209677A1 (en) | Self-Cleaning Catalytic Chemical Vapor Deposition Apparatus And Cleaning Method Thereof | |
| JP2726414B2 (en) | Method for producing silicon-based thin film | |
| JPS6134931A (en) | Silicon film manufacturing method | |
| JPH02151031A (en) | Manufacturing method of semiconductor device | |
| EP0349695A1 (en) | Method of depositing metal on a silicon substrate | |
| JP3522738B2 (en) | Metal thin film formation method by chemical vapor deposition | |
| JP2891991B1 (en) | Plasma CVD equipment | |
| JP2689985B2 (en) | Semiconductor device manufacturing method and manufacturing apparatus |