GB2200795B - Eprom cell with integral select transistor - Google Patents

Eprom cell with integral select transistor

Info

Publication number: GB2200795B
Authority: GB; United Kingdom
Prior art keywords: select transistor; eprom cell; integral select; integral; eprom
Prior art date: 1987-02-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

GB8800379A

Other versions

GB8800379D0 (en

GB2200795A (en

Inventor

Simon M Tam

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intel Corp

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-02-02

Filing date

1988-01-08

Publication date

1990-10-03

1988-01-08 Application filed by Intel Corp filed Critical Intel Corp

1988-02-10 Publication of GB8800379D0 publication Critical patent/GB8800379D0/en

1988-08-10 Publication of GB2200795A publication Critical patent/GB2200795A/en

1990-10-03 Application granted granted Critical

1990-10-03 Publication of GB2200795B publication Critical patent/GB2200795B/en

2008-01-08 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/031—Manufacture or treatment of data-storage electrodes
- H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

GB8800379A 1987-02-02 1988-01-08 Eprom cell with integral select transistor Expired - Lifetime GB2200795B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US999887A	1987-02-02	1987-02-02

Publications (3)

Publication Number	Publication Date
GB8800379D0 GB8800379D0 (en)	1988-02-10
GB2200795A GB2200795A (en)	1988-08-10
GB2200795B true GB2200795B (en)	1990-10-03

Family

ID=21740931

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8800379A Expired - Lifetime GB2200795B (en)	1987-02-02	1988-01-08	Eprom cell with integral select transistor

Country Status (3)

Country	Link
JP (1)	JPS63271973A (en)
KR (1)	KR880010496A (en)
GB (1)	GB2200795B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5268319A (en) *	1988-06-08	1993-12-07	Eliyahou Harari	Highly compact EPROM and flash EEPROM devices
US5095344A (en)	1988-06-08	1992-03-10	Eliyahou Harari	Highly compact eprom and flash eeprom devices
US5268318A (en) *	1988-06-08	1993-12-07	Eliyahou Harari	Highly compact EPROM and flash EEPROM devices
EP0369676B1 (en) *	1988-11-17	1995-11-08	Seiko Instr Inc	Semi-conductor non-volatile memory.
US5262987A (en) *	1988-11-17	1993-11-16	Seiko Instruments Inc.	Floating gate semiconductor nonvolatile memory having impurity doped regions for low voltage operation
JPH03102878A (en) *	1989-09-18	1991-04-30	Seiko Instr Inc	Electrically erasable nonvolatile semiconductor memory
IT1236980B (en) *	1989-12-22	1993-05-12	Sgs Thomson Microelectronics	NON-VOLATILE EPROM MEMORY CELL WITH DIVIDED GATE AND SELF-ALIGNED FIELD INSULATION PROCESS FOR OBTAINING THE ABOVE CELL
US5572054A (en) *	1990-01-22	1996-11-05	Silicon Storage Technology, Inc.	Method of operating a single transistor non-volatile electrically alterable semiconductor memory device
CA2051686C (en) *	1990-01-22	2001-10-23	Bing Yeh	Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
JPH088318B2 (en) *	1990-05-09	1996-01-29	株式会社東芝	Method for manufacturing non-volatile semiconductor memory device
JPH0424969A (en) *	1990-05-15	1992-01-28	Toshiba Corp	semiconductor storage device
FR2672434A1 (en) *	1991-01-31	1992-08-07	Gemplus Card Int	OXIDE BREAKING MOS FUSE.
JP3854629B2 (en) *	1991-04-09	2006-12-06	シリコン・ストーリッジ・テクノロジー・インク	Memory array device, memory cell device and programming method thereof
US5424567A (en) *	1991-05-15	1995-06-13	North American Philips Corporation	Protected programmable transistor with reduced parasitic capacitances and method of fabrication
JP2004186452A (en) *	2002-12-04	2004-07-02	Renesas Technology Corp	Nonvolatile semiconductor memory device and manufacturing method thereof
JP2010062594A (en) *	2009-12-18	2010-03-18	Renesas Technology Corp	Non-volatile semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2077492A (en) *	1980-06-04	1981-12-16	Ates Componenti Elettron	Electrically alterable nonvolatile floating gate memory cell
EP0211632A2 (en) *	1985-08-02	1987-02-25	WaferScale Integration Inc.	Self-aligned split gate EPROM

1988
- 1988-01-08 GB GB8800379A patent/GB2200795B/en not_active Expired - Lifetime
- 1988-01-23 KR KR1019880000511A patent/KR880010496A/en not_active Ceased
- 1988-02-02 JP JP63021423A patent/JPS63271973A/en active Pending

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2077492A (en) *	1980-06-04	1981-12-16	Ates Componenti Elettron	Electrically alterable nonvolatile floating gate memory cell
EP0211632A2 (en) *	1985-08-02	1987-02-25	WaferScale Integration Inc.	Self-aligned split gate EPROM

Also Published As

Publication number	Publication date
JPS63271973A (en)	1988-11-09
GB8800379D0 (en)	1988-02-10
GB2200795A (en)	1988-08-10
KR880010496A (en)	1988-10-10

Publication	Publication Date	Title
GB2163490B (en)	1987-03-11	Injection device
GB8518336D0 (en)	1985-08-29	Microbial fuel cells
GB2200795B (en)	1990-10-03	Eprom cell with integral select transistor
EP0294085A3 (en)	1989-10-11	Electrochemical elements
YU232787A (en)	1990-06-30	Portable diascope with decreased highth
EP0163031A3 (en)	1989-01-18	Superconducting transistor
GB8819748D0 (en)	1988-09-21	Transistor
GB8722896D0 (en)	1987-11-04	Conductivity cell
GB8523369D0 (en)	1985-10-23	Transistor
SG66993G (en)	1993-08-06	Transistor arrangement
EP0290923A3 (en)	1988-11-30	Incubator
GB8621443D0 (en)	1986-10-15	Cells
GB2177908B (en)	1988-05-11	Drain fitting with detented open position
EP0220045A3 (en)	1989-03-08	Established cell line
GB8828496D0 (en)	1989-01-11	Gate
JPS6459778A (en)	1989-03-07	Fuel cell facility
GB2178593B (en)	1989-07-26	Transistor manufacture
GB2176334B (en)	1988-05-25	Aluminium-air cell
GB8708831D0 (en)	1987-05-20	Erasing eprom cell
JPS6452387A (en)	1989-02-28	Fuel cell
GB2208031B (en)	1990-07-25	Voltaic cell
GB2161129B (en)	1987-01-14	Article-distributing device associated with feeding assembly units
HUT36697A (en)	1985-10-28	Zpper with continuous closing elements
GB8717916D0 (en)	1987-09-03	Incubator
GB8619426D0 (en)	1986-09-17	Transistor

Legal Events

Date	Code	Title	Description
1992-09-02	PCNP	Patent ceased through non-payment of renewal fee