GB2297648B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: GB2297648B
Authority: GB; United Kingdom
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1991-08-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB9601877A

Other versions

GB9601877D0 (en

GB2297648A (en

Inventor

Ji-Hong Ahn

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-08-31

Filing date

1992-08-26

Publication date

1996-10-23

1991-08-31 Priority claimed from KR1019910015250A external-priority patent/KR940009611B1/en

1992-08-26 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1992-08-26 Priority claimed from GB9218177A external-priority patent/GB2259187B/en

1996-04-03 Publication of GB9601877D0 publication Critical patent/GB9601877D0/en

1996-08-07 Publication of GB2297648A publication Critical patent/GB2297648A/en

1996-10-23 Application granted granted Critical

1996-10-23 Publication of GB2297648B publication Critical patent/GB2297648B/en

2012-08-26 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)

GB9601877A 1991-08-31 1992-08-26 Semiconductor device Expired - Fee Related GB2297648B (en)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
KR1019910015250A KR940009611B1 (en)	1991-08-31	1991-08-31	Capacitor Fabrication of Highly Integrated Semiconductor Devices Patterned Using Oxide Etch Masks (POEM Cells)
KR910021974		1991-11-30
KR920003339		1992-02-29
GB9218177A GB2259187B (en)	1991-08-31	1992-08-26	Semiconductor device

Publications (3)

Publication Number	Publication Date
GB9601877D0 GB9601877D0 (en)	1996-04-03
GB2297648A GB2297648A (en)	1996-08-07
GB2297648B true GB2297648B (en)	1996-10-23

Family

ID=27450924

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GB9601877A Expired - Fee Related GB2297648B (en)	1991-08-31	1992-08-26	Semiconductor device
GB9521179A Expired - Fee Related GB2293690B (en)	1991-08-31	1992-08-26	Manufacturing method for a semiconductor device

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
GB9521179A Expired - Fee Related GB2293690B (en)	1991-08-31	1992-08-26	Manufacturing method for a semiconductor device

Country Status (1)

Country	Link
GB (2)	GB2297648B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5739060A (en) *	1996-08-16	1998-04-14	United Microelecrtronics Corporation	Method of fabricating a capacitor structure for a semiconductor memory device
DE19637389C1 (en) *	1996-09-13	1997-10-16	Siemens Ag	High packing density DRAM cell array production
JPH10229172A (en) *	1997-01-06	1998-08-25	Texas Instr Inc <Ti>	Method of forming lower electrode of dram-cell-stacked capacitor
NL1006113C2 (en) *	1997-05-22	1998-11-25	United Microelectronics Corp	Forming DRAM cell containing data storage capacitor, used for computer memory chips

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0443439A2 (en) *	1990-02-23	1991-08-28	INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH	One-transistor-storage cell device and method for making the same
GB2250377A (en) *	1990-11-29	1992-06-03	Samsung Electronics Co Ltd	Method for manufacturing a semiconductor device with villus type capacitor
GB2252447A (en) *	1991-01-30	1992-08-05	Samsung Electronics Co Ltd	Highly integrated semiconductor DRAM

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR910010043B1 (en) *	1988-07-28	1991-12-10	한국전기통신공사	Fine Line Width Formation Method Using Spacer
JPH0338061A (en) *	1989-07-05	1991-02-19	Fujitsu Ltd	Semiconductor memory
US5084405A (en) *	1991-06-07	1992-01-28	Micron Technology, Inc.	Process to fabricate a double ring stacked cell structure

1992
- 1992-08-26 GB GB9601877A patent/GB2297648B/en not_active Expired - Fee Related
- 1992-08-26 GB GB9521179A patent/GB2293690B/en not_active Expired - Fee Related

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0443439A2 (en) *	1990-02-23	1991-08-28	INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH	One-transistor-storage cell device and method for making the same
GB2250377A (en) *	1990-11-29	1992-06-03	Samsung Electronics Co Ltd	Method for manufacturing a semiconductor device with villus type capacitor
GB2252447A (en) *	1991-01-30	1992-08-05	Samsung Electronics Co Ltd	Highly integrated semiconductor DRAM

Also Published As

Publication number	Publication date
GB2293690B (en)	1996-06-19
GB9601877D0 (en)	1996-04-03
GB2293690A (en)	1996-04-03
GB9521179D0 (en)	1995-12-20
GB2297648A (en)	1996-08-07

Publication	Publication Date	Title
KR970005695B1 (en)	1997-04-18	Semiconductor device
GB2261990B (en)	1995-10-11	Semiconductor device
GB2259187B (en)	1996-06-19	Semiconductor device
KR970001887B1 (en)	1997-02-18	Semiconductor device
GB2269935B (en)	1997-01-22	Semiconductor device
EP0503078A4 (en)	1992-11-19	Semiconductor device
EP0564204A3 (en)	1994-09-28	Semiconductor device
EP0536668A3 (en)	1993-05-26	Vertical semiconductor device
EP0594441A3 (en)	1994-06-08	Semiconductor device
EP0461639A3 (en)	1993-09-22	Plastic-molded-type semiconductor device
GB2267996B (en)	1996-04-17	Semiconductor device
GB2249869B (en)	1994-10-12	Semiconductor device
GB2266183B (en)	1994-12-07	Semiconductor device
TW476451U (en)	2002-02-11	Semiconductor device
EP0454134A3 (en)	1993-05-19	Semiconductor device
EP0495114A4 (en)	1992-10-28	Semiconductor device
TW438049U (en)	2001-05-28	Semiconductor device
GB2256313B (en)	1995-03-29	Semiconductor device
EP0495991A4 (en)	1992-10-28	Semiconductor device
GB9100619D0 (en)	1991-02-27	Semiconductor device
EP0534203A3 (en)	1993-08-25	Semiconductor device
KR950013786B1 (en)	1995-11-16	Semiconductor device
GB2244864B (en)	1995-01-18	Semiconductor device
GB2297648B (en)	1996-10-23	Semiconductor device
GB9009558D0 (en)	1990-06-20	Semiconductor device

Legal Events

Date	Code	Title	Description
2011-04-27	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20100826