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GB2291741B - Lightly doped drain field effect transistors - Google Patents

Lightly doped drain field effect transistors

Info

Publication number
GB2291741B
GB2291741B GB9515147A GB9515147A GB2291741B GB 2291741 B GB2291741 B GB 2291741B GB 9515147 A GB9515147 A GB 9515147A GB 9515147 A GB9515147 A GB 9515147A GB 2291741 B GB2291741 B GB 2291741B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
lightly doped
doped drain
drain field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9515147A
Other versions
GB2291741A (en
GB9515147D0 (en
Inventor
Byung Jin Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9515147D0 publication Critical patent/GB9515147D0/en
Publication of GB2291741A publication Critical patent/GB2291741A/en
Application granted granted Critical
Publication of GB2291741B publication Critical patent/GB2291741B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H10D64/01324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H10P50/667—
GB9515147A 1994-07-25 1995-07-24 Lightly doped drain field effect transistors Expired - Fee Related GB2291741B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940017957A KR960006004A (en) 1994-07-25 1994-07-25 Semiconductor device and manufacturing method

Publications (3)

Publication Number Publication Date
GB9515147D0 GB9515147D0 (en) 1995-09-20
GB2291741A GB2291741A (en) 1996-01-31
GB2291741B true GB2291741B (en) 1998-07-22

Family

ID=19388729

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9515147A Expired - Fee Related GB2291741B (en) 1994-07-25 1995-07-24 Lightly doped drain field effect transistors

Country Status (6)

Country Link
US (1) US5559049A (en)
JP (1) JP2774952B2 (en)
KR (1) KR960006004A (en)
CN (1) CN1041471C (en)
DE (1) DE19527131B4 (en)
GB (1) GB2291741B (en)

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Also Published As

Publication number Publication date
DE19527131A1 (en) 1996-02-01
US5559049A (en) 1996-09-24
DE19527131B4 (en) 2007-04-12
CN1123957A (en) 1996-06-05
JPH0846201A (en) 1996-02-16
GB2291741A (en) 1996-01-31
KR960006004A (en) 1996-02-23
CN1041471C (en) 1998-12-30
JP2774952B2 (en) 1998-07-09
GB9515147D0 (en) 1995-09-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20070724