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GB2288691B - Bipolar semiconductor device and production method therfor - Google Patents

Bipolar semiconductor device and production method therfor

Info

Publication number
GB2288691B
GB2288691B GB9510500A GB9510500A GB2288691B GB 2288691 B GB2288691 B GB 2288691B GB 9510500 A GB9510500 A GB 9510500A GB 9510500 A GB9510500 A GB 9510500A GB 2288691 B GB2288691 B GB 2288691B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
production method
bipolar semiconductor
method therfor
therfor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9510500A
Other versions
GB2288691A (en
GB9510500D0 (en
Inventor
Seiji Ochi
Hirotaka Kizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4217251A external-priority patent/JP2731089B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9510500D0 publication Critical patent/GB9510500D0/en
Publication of GB2288691A publication Critical patent/GB2288691A/en
Application granted granted Critical
Publication of GB2288691B publication Critical patent/GB2288691B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/881—Resonant tunnelling transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
GB9510500A 1991-10-02 1992-09-30 Bipolar semiconductor device and production method therfor Expired - Fee Related GB2288691B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25511891 1991-10-02
JP4217251A JP2731089B2 (en) 1991-10-02 1992-07-21 High speed operation semiconductor device and method of manufacturing the same
GB9220600A GB2260858B (en) 1991-10-02 1992-09-30 High-speed semiconductor device and production method therefor

Publications (3)

Publication Number Publication Date
GB9510500D0 GB9510500D0 (en) 1995-07-19
GB2288691A GB2288691A (en) 1995-10-25
GB2288691B true GB2288691B (en) 1996-06-12

Family

ID=27266395

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9510500A Expired - Fee Related GB2288691B (en) 1991-10-02 1992-09-30 Bipolar semiconductor device and production method therfor

Country Status (1)

Country Link
GB (1) GB2288691B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1178537A3 (en) * 1998-02-20 2004-09-29 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and semiconductor device
US6737684B1 (en) 1998-02-20 2004-05-18 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and semiconductor device
GB2341974A (en) * 1998-09-22 2000-03-29 Secr Defence Semiconductor device incorporating a superlattice structure
WO2007121524A1 (en) * 2006-04-20 2007-11-01 Epitactix Pty Ltd. Method of manufacture and resulting structures for semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0292568A1 (en) * 1986-12-03 1988-11-30 Hitachi, Ltd. Hetero-junction bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0292568A1 (en) * 1986-12-03 1988-11-30 Hitachi, Ltd. Hetero-junction bipolar transistor

Also Published As

Publication number Publication date
GB2288691A (en) 1995-10-25
GB9510500D0 (en) 1995-07-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000930