GB2288091B - Buit-in drive power-source semiconductor device - Google Patents

Buit-in drive power-source semiconductor device

Info

Publication number: GB2288091B
Authority: GB; United Kingdom
Prior art keywords: buit; semiconductor device; drive power; source semiconductor; source
Prior art date: 1991-05-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB9422123A

Other versions

GB2288091A (en

GB9422123D0 (en

Inventor

Naoki Kumagai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fuji Electric Co Ltd

Original Assignee

Fuji Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-05-10

Filing date

1992-05-08

Publication date

1995-12-20

1991-12-27 Priority claimed from JP3346632A external-priority patent/JPH05122035A/en

1992-05-08 Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd

1992-05-08 Priority claimed from GB9209923A external-priority patent/GB2257583B/en

1995-01-04 Publication of GB9422123D0 publication Critical patent/GB9422123D0/en

1995-10-04 Publication of GB2288091A publication Critical patent/GB2288091A/en

1995-12-20 Application granted granted Critical

1995-12-20 Publication of GB2288091B publication Critical patent/GB2288091B/en

2012-05-08 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Electronic Switches (AREA)

GB9422123A 1991-05-10 1992-05-08 Buit-in drive power-source semiconductor device Expired - Fee Related GB2288091B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP10528791		1991-05-10
JP3346632A JPH05122035A (en)	1991-05-10	1991-12-27	Semiconductor device with built-in driving power source
GB9209923A GB2257583B (en)	1991-05-10	1992-05-08	Built-in drive power-source semiconductor device

Publications (3)

Publication Number	Publication Date
GB9422123D0 GB9422123D0 (en)	1995-01-04
GB2288091A GB2288091A (en)	1995-10-04
GB2288091B true GB2288091B (en)	1995-12-20

Family

ID=27266171

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GB9422122A Expired - Fee Related GB2288090B (en)	1991-05-10	1992-05-08	Built-in drive power-source semiconductor device
GB9422123A Expired - Fee Related GB2288091B (en)	1991-05-10	1992-05-08	Buit-in drive power-source semiconductor device

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
GB9422122A Expired - Fee Related GB2288090B (en)	1991-05-10	1992-05-08	Built-in drive power-source semiconductor device

Country Status (1)

Country	Link
GB (2)	GB2288090B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19728283A1 (en) *	1997-07-02	1999-01-07	Siemens Ag	Control circuit for a controllable semiconductor component
US6169431B1 (en)	1998-06-02	2001-01-02	Infineon Technologies Ag	Drive circuit for a controllable semiconductor component
US6806457B2 (en) *	2001-09-28	2004-10-19	Tai-Her Yang	Transistor photoelectric conversion drive circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1444168A (en) *	1972-12-08	1976-07-28	Asea Ab	Thyristor circuit
GB2049329A (en) *	1979-05-14	1980-12-17	Honeywell Inc	Electrical load control system

1992
- 1992-05-08 GB GB9422122A patent/GB2288090B/en not_active Expired - Fee Related
- 1992-05-08 GB GB9422123A patent/GB2288091B/en not_active Expired - Fee Related

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1444168A (en) *	1972-12-08	1976-07-28	Asea Ab	Thyristor circuit
GB2049329A (en) *	1979-05-14	1980-12-17	Honeywell Inc	Electrical load control system

Also Published As

Publication number	Publication date
GB2288091A (en)	1995-10-04
GB9422122D0 (en)	1995-01-04
GB2288090B (en)	1995-12-20
GB2288090A (en)	1995-10-04
GB9422123D0 (en)	1995-01-04

Publication	Publication Date	Title
KR970005695B1 (en)	1997-04-18	Semiconductor device
GB2261990B (en)	1995-10-11	Semiconductor device
GB2259187B (en)	1996-06-19	Semiconductor device
KR970001887B1 (en)	1997-02-18	Semiconductor device
EP0563580A3 (en)	1993-12-01	Drive circuit for semiconductor light-emitting device
EP0564204A3 (en)	1994-09-28	Semiconductor device
GB9305127D0 (en)	1993-04-28	Semiconductor device
EP0594441A3 (en)	1994-06-08	Semiconductor device
EP0501316A3 (en)	1994-11-09	Optical semiconductor device
EP0535307A3 (en)	1993-07-28	Semiconductor laser device
KR970006537B1 (en)	1997-04-29	Semiconductor device
EP0506480A3 (en)	1993-02-03	Semiconductor device package
GB2267996B (en)	1996-04-17	Semiconductor device
GB2266183B (en)	1994-12-07	Semiconductor device
EP0497270A3 (en)	1993-01-20	Semiconductor laser device driving circuit
TW540828U (en)	2003-07-01	Semiconductor device
GB2257583B (en)	1995-10-25	Built-in drive power-source semiconductor device
SG49206A1 (en)	1998-05-18	Semiconductor device
GB2256313B (en)	1995-03-29	Semiconductor device
KR970003890B1 (en)	1997-03-22	Semiconductor device
KR970006538B1 (en)	1997-04-29	Semiconductor device
EP0527547A3 (en)	1993-03-10	Semiconductor laser device
GB2288091B (en)	1995-12-20	Buit-in drive power-source semiconductor device
EP0534203A3 (en)	1993-08-25	Semiconductor device
KR950013786B1 (en)	1995-11-16	Semiconductor device

Legal Events

Date	Code	Title	Description
2002-12-31	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20020508