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GB2285338B - Method for fabricating capacitor - Google Patents

Method for fabricating capacitor

Info

Publication number
GB2285338B
GB2285338B GB9426360A GB9426360A GB2285338B GB 2285338 B GB2285338 B GB 2285338B GB 9426360 A GB9426360 A GB 9426360A GB 9426360 A GB9426360 A GB 9426360A GB 2285338 B GB2285338 B GB 2285338B
Authority
GB
United Kingdom
Prior art keywords
fabricating capacitor
fabricating
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9426360A
Other versions
GB9426360D0 (en
GB2285338A (en
Inventor
Yeong Jin Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Co Ltd filed Critical Hyundai Electronics Co Ltd
Publication of GB9426360D0 publication Critical patent/GB9426360D0/en
Publication of GB2285338A publication Critical patent/GB2285338A/en
Application granted granted Critical
Publication of GB2285338B publication Critical patent/GB2285338B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
GB9426360A 1993-12-29 1994-12-29 Method for fabricating capacitor Expired - Fee Related GB2285338B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930030853A KR0120547B1 (en) 1993-12-29 1993-12-29 Fabricating method of capacitor

Publications (3)

Publication Number Publication Date
GB9426360D0 GB9426360D0 (en) 1995-03-01
GB2285338A GB2285338A (en) 1995-07-05
GB2285338B true GB2285338B (en) 1997-08-27

Family

ID=19373820

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9426360A Expired - Fee Related GB2285338B (en) 1993-12-29 1994-12-29 Method for fabricating capacitor

Country Status (2)

Country Link
KR (1) KR0120547B1 (en)
GB (1) GB2285338B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0180779B1 (en) * 1995-02-27 1999-03-20 김주용 Method for manufacturing semiconductor capacitor
DE19527023C1 (en) * 1995-07-24 1997-02-27 Siemens Ag Method of manufacturing a capacitor in a semiconductor device
DE19546999C1 (en) * 1995-12-15 1997-04-30 Siemens Ag Capacitor mfg system for semiconductor device
DE19707977C1 (en) * 1997-02-27 1998-06-10 Siemens Ag Capacitor production especially for DRAM cell array
EP0862207A1 (en) * 1997-02-27 1998-09-02 Siemens Aktiengesellschaft Method of forming a DRAM trench capacitor
DE19821776C1 (en) * 1998-05-14 1999-09-30 Siemens Ag Capacitor production in an IC, especially for stacked capacitor production in a DRAM circuit
DE19821777C1 (en) * 1998-05-14 1999-06-17 Siemens Ag DRAM capacitor production employs a side wall support structure and an etch-stop layer
KR100442779B1 (en) * 2001-12-20 2004-08-04 동부전자 주식회사 Method for manufacturing dram device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0507683A1 (en) * 1991-04-01 1992-10-07 Fujitsu Limited Stacked capacitor and method for making same
US5223729A (en) * 1990-09-26 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of producing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223729A (en) * 1990-09-26 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and a method of producing the same
EP0507683A1 (en) * 1991-04-01 1992-10-07 Fujitsu Limited Stacked capacitor and method for making same

Also Published As

Publication number Publication date
GB9426360D0 (en) 1995-03-01
KR0120547B1 (en) 1997-10-27
GB2285338A (en) 1995-07-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20071229