[go: up one dir, main page]

GB2284934B - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
GB2284934B
GB2284934B GB9425120A GB9425120A GB2284934B GB 2284934 B GB2284934 B GB 2284934B GB 9425120 A GB9425120 A GB 9425120A GB 9425120 A GB9425120 A GB 9425120A GB 2284934 B GB2284934 B GB 2284934B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9425120A
Other versions
GB9425120D0 (en
GB2284934A (en
Inventor
Shoji Kitamura
Yoichi Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of GB9425120D0 publication Critical patent/GB9425120D0/en
Publication of GB2284934A publication Critical patent/GB2284934A/en
Application granted granted Critical
Publication of GB2284934B publication Critical patent/GB2284934B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127Lasers; Multiple laser arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0232Lead-frames
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/123Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0231Stems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02218Material of the housings; Filling of the housings
    • H01S5/02234Resin-filled housings; the housings being made of resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • H10W72/5522
    • H10W90/756

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Optical Head (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
GB9425120A 1993-12-14 1994-12-13 Semiconductor laser Expired - Fee Related GB2284934B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5312360A JPH07170019A (en) 1993-12-14 1993-12-14 Semiconductor laser device

Publications (3)

Publication Number Publication Date
GB9425120D0 GB9425120D0 (en) 1995-02-08
GB2284934A GB2284934A (en) 1995-06-21
GB2284934B true GB2284934B (en) 1997-06-25

Family

ID=18028317

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9425120A Expired - Fee Related GB2284934B (en) 1993-12-14 1994-12-13 Semiconductor laser

Country Status (5)

Country Link
JP (1) JPH07170019A (en)
DE (1) DE4444618A1 (en)
FR (1) FR2713828B1 (en)
GB (1) GB2284934B (en)
TW (1) TW373828U (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335980A (en) * 1994-06-07 1995-12-22 Fuji Electric Co Ltd Semiconductor laser device
JP3082695B2 (en) 1997-01-16 2000-08-28 日本電気株式会社 Semiconductor laser device and manufacturing method thereof
JP3735033B2 (en) 2000-12-07 2006-01-11 シャープ株式会社 Semiconductor laser device
US6577656B2 (en) * 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568830A1 (en) * 1992-04-07 1993-11-10 Fuji Electric Co., Ltd. Semiconductor laser device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01166591A (en) * 1987-12-22 1989-06-30 Nec Kagoshima Ltd Laser diode
JPH02125688A (en) * 1988-11-04 1990-05-14 Sony Corp Semiconductor laser device
JPH02125687A (en) * 1988-11-04 1990-05-14 Sony Corp Semiconductor laser device
JPH02159084A (en) * 1988-12-12 1990-06-19 Mitsubishi Electric Corp molded light emitting element
JPH0724323B2 (en) * 1989-09-05 1995-03-15 三菱電機株式会社 Semiconductor laser device
US5140384A (en) * 1990-06-14 1992-08-18 Rohm Co., Ltd. Semiconductor laser device mounted on a stem
JPH04137580A (en) * 1990-09-27 1992-05-12 Sharp Corp Stem for semiconductor laser
DE69118482T2 (en) * 1990-11-07 1996-08-22 Fuji Electric Co Ltd Laser diode with a protective layer on its light-emitting end surface
JP2823381B2 (en) * 1991-04-19 1998-11-11 ローム株式会社 Semiconductor laser device
JPH04346281A (en) * 1991-05-23 1992-12-02 Sharp Corp Semiconductor laser device
JPH04364791A (en) * 1991-06-12 1992-12-17 Fuji Electric Co Ltd Semiconductor laser
JPH0523563U (en) * 1991-07-17 1993-03-26 ソニー株式会社 Semiconductor laser device
US5307362A (en) * 1991-11-06 1994-04-26 Rohm Co., Ltd. Mold-type semiconductor laser device
US5499262A (en) * 1992-03-18 1996-03-12 Rohm Co., Ltd. Semiconductor laser light source unit
DE69218431T2 (en) * 1992-10-14 1997-09-25 Ibm Encapsulated, light emitting diode and encapsulation process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568830A1 (en) * 1992-04-07 1993-11-10 Fuji Electric Co., Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
GB9425120D0 (en) 1995-02-08
FR2713828B1 (en) 1996-02-02
GB2284934A (en) 1995-06-21
TW373828U (en) 1999-11-01
JPH07170019A (en) 1995-07-04
DE4444618A1 (en) 1995-06-22
FR2713828A1 (en) 1995-06-16

Similar Documents

Publication Publication Date Title
GB2285172B (en) Semiconductor laser device
DE69412472D1 (en) Laser
DE69407455D1 (en) Semiconductor laser
GB2275822B (en) Semiconductor devices
DE69411364D1 (en) Semiconductor laser
EP0494765A3 (en) Semiconductor lasers
EP0557638A3 (en) Semiconductor laser device
EP0494766A3 (en) Semiconductor lasers
EP0518320A3 (en) Semiconductor laser
KR970007180B1 (en) Laser
EP0416477A3 (en) Semiconductor laser
EP0500351A3 (en) Semiconductor laser
GB2294804B (en) Laser device
EP0468482A3 (en) Semiconductor laser
GB2278726B (en) Semiconductor laser device
DE69404135D1 (en) Laser
SG77568A1 (en) Semiconductor laser
EP0589727A3 (en) Semiconductor laser device
GB9422901D0 (en) Semiconductor lasers
EP0650235A3 (en) Semiconductor laser device.
DE69407374D1 (en) Semiconductor laser
DE69402115D1 (en) Semiconductor laser
GB2284934B (en) Semiconductor laser
DE69326042D1 (en) Laser
KR0127283B1 (en) Semiconductor laser devcice

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19991213