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GB2279808B - Thermally matched readout/detector assembly and method for fabricating same - Google Patents

Thermally matched readout/detector assembly and method for fabricating same

Info

Publication number
GB2279808B
GB2279808B GB9418859A GB9418859A GB2279808B GB 2279808 B GB2279808 B GB 2279808B GB 9418859 A GB9418859 A GB 9418859A GB 9418859 A GB9418859 A GB 9418859A GB 2279808 B GB2279808 B GB 2279808B
Authority
GB
United Kingdom
Prior art keywords
substrate
silicon
bonded
assembly
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9418859A
Other versions
GB2279808A (en
GB9418859D0 (en
Inventor
Ronald M Finnila
Gerard T Malloy
Joseph J Bendik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of GB9418859D0 publication Critical patent/GB9418859D0/en
Publication of GB2279808A publication Critical patent/GB2279808A/en
Application granted granted Critical
Publication of GB2279808B publication Critical patent/GB2279808B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/004—Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a metal of the iron group
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1843—Infrared image sensors of the hybrid type
    • H10P72/74—
    • H10W90/00—
    • H10P72/7432—
    • H10P72/7434—
    • H10P72/744—
    • H10W20/20—
    • H10W72/072—
    • H10W72/07232—
    • H10W72/07236—
    • H10W72/073—
    • H10W72/07307—
    • H10W72/07331—
    • H10W72/07336—
    • H10W72/07337—
    • H10W72/241—
    • H10W72/252—
    • H10W72/29—
    • H10W72/352—
    • H10W72/353—
    • H10W72/354—
    • H10W72/877—
    • H10W72/952—
    • H10W90/722—
    • H10W90/734—
    • H10W99/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

An intergrated circuit assembly includes a silicon thin film circuit bonded to a substrate of a material selected to provide the assembly with an effective thermal expansion characteristic that approximately matches hat of another device, such as HgCdTe detector. The assembly, when bump bonded with the device, is resistant to failure when subjected to thermal cycling. A first method for manufacturing the assembly includes the steps of forming a desired circuit in a thin layer (12) of silicon on a silicon substrate of a bonded silicon wafer. The thin silicon layer including the circuit is is then bonded to the selected substrate material (24). Thereafter the silicon substrate is removed and the resulting assembly may be mated to the device (36). A second method employs a two stage transfer technique wherein the processed thin silicon layer is bonded to a first, temporary substrate; the silicon substrate is removed; a second, permanent substrate is attached; and the first substrate is removed. The second substrate is comprised of a material selected for providing the assembly with a coefficient of thermal expansion that is matched to the material of the device. <IMAGE>
GB9418859A 1993-01-19 1994-01-10 Thermally matched readout/detector assembly and method for fabricating same Expired - Fee Related GB2279808B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US621293A 1993-01-19 1993-01-19
PCT/US1994/000370 WO1994017557A1 (en) 1993-01-19 1994-01-10 Thermally matched readout/detector assembly and method for fabricating same

Publications (3)

Publication Number Publication Date
GB9418859D0 GB9418859D0 (en) 1994-11-09
GB2279808A GB2279808A (en) 1995-01-11
GB2279808B true GB2279808B (en) 1996-11-20

Family

ID=46257859

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9418859A Expired - Fee Related GB2279808B (en) 1993-01-19 1994-01-10 Thermally matched readout/detector assembly and method for fabricating same

Country Status (3)

Country Link
JP (1) JPH07506937A (en)
GB (1) GB2279808B (en)
WO (1) WO1994017557A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19513678C2 (en) * 1995-04-11 2002-03-14 Aeg Infrarot Module Gmbh Detector arrangement consisting of several submodules
DE19546423C1 (en) * 1995-12-12 1997-02-20 Siemens Ag Radiation sensitive transducer e.g. CCD or photodiode array
SG83089A1 (en) * 1996-10-18 2001-09-18 Eg & G Internat Isolation process for surface micromachined sensors and actuators
AU2002356147A1 (en) 2001-08-24 2003-03-10 Schott Glas Method for producing contacts and printed circuit packages
AU2002360300A1 (en) 2001-10-26 2003-05-12 Massachusetts Institute Of Technology Hybrid integration of electrical and optical chips
US7723815B1 (en) * 2004-07-09 2010-05-25 Raytheon Company Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization
US7576404B2 (en) * 2005-12-16 2009-08-18 Icemos Technology Ltd. Backlit photodiode and method of manufacturing a backlit photodiode
US8154099B2 (en) 2009-08-19 2012-04-10 Raytheon Company Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate
JP5587826B2 (en) * 2011-05-12 2014-09-10 日本電信電話株式会社 Semiconductor device
IL242952B (en) 2015-12-06 2021-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Array of detectors and a method to create it
US20180068843A1 (en) 2016-09-07 2018-03-08 Raytheon Company Wafer stacking to form a multi-wafer-bonded structure
US10453731B2 (en) * 2016-10-21 2019-10-22 Raytheon Company Direct bond method providing thermal expansion matched devices
US10300649B2 (en) 2017-08-29 2019-05-28 Raytheon Company Enhancing die flatness
US10847569B2 (en) 2019-02-26 2020-11-24 Raytheon Company Wafer level shim processing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371862A2 (en) * 1988-11-29 1990-06-06 The University Of North Carolina At Chapel Hill Method of forming a nonsilicon semiconductor on insulator structure
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays
JPH03266478A (en) * 1990-03-15 1991-11-27 Fujitsu Ltd Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069243B2 (en) * 1987-09-01 1994-02-02 日本電気株式会社 Solid-state image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371862A2 (en) * 1988-11-29 1990-06-06 The University Of North Carolina At Chapel Hill Method of forming a nonsilicon semiconductor on insulator structure
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays
JPH03266478A (en) * 1990-03-15 1991-11-27 Fujitsu Ltd Semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol16 no79 (E-1171)26 February1992& JP A 03266478 (FUJITSU) *
PPATENT ABSTRACTS OF JAPAN vol13 no270 (E-776)8 March 1989 &JP A 010621056 (NEC CORP) *

Also Published As

Publication number Publication date
GB2279808A (en) 1995-01-11
GB9418859D0 (en) 1994-11-09
WO1994017557A1 (en) 1994-08-04
JPH07506937A (en) 1995-07-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19990110