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GB2273605B - Process for producing a semiconductor device and a semiconductor device produced by the process - Google Patents

Process for producing a semiconductor device and a semiconductor device produced by the process

Info

Publication number
GB2273605B
GB2273605B GB9323883A GB9323883A GB2273605B GB 2273605 B GB2273605 B GB 2273605B GB 9323883 A GB9323883 A GB 9323883A GB 9323883 A GB9323883 A GB 9323883A GB 2273605 B GB2273605 B GB 2273605B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
producing
produced
device produced
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9323883A
Other versions
GB9323883D0 (en
GB2273605A (en
Inventor
Takashi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of GB9323883D0 publication Critical patent/GB9323883D0/en
Publication of GB2273605A publication Critical patent/GB2273605A/en
Application granted granted Critical
Publication of GB2273605B publication Critical patent/GB2273605B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H10P14/6526—
    • H10P14/6532—
    • H10P14/6548—
    • H10P14/6922—
    • H10P14/6923—
    • H10P14/6927—
    • H10P95/00—
    • H10P14/6334—
    • H10P14/6336—
    • H10P14/662—
    • H10P14/6682—
    • H10P14/69215—
    • H10P14/69433—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB9323883A 1992-11-20 1993-11-19 Process for producing a semiconductor device and a semiconductor device produced by the process Expired - Fee Related GB2273605B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4312423A JPH06163523A (en) 1992-11-20 1992-11-20 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
GB9323883D0 GB9323883D0 (en) 1994-01-05
GB2273605A GB2273605A (en) 1994-06-22
GB2273605B true GB2273605B (en) 1996-08-28

Family

ID=18029044

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9323883A Expired - Fee Related GB2273605B (en) 1992-11-20 1993-11-19 Process for producing a semiconductor device and a semiconductor device produced by the process

Country Status (3)

Country Link
JP (1) JPH06163523A (en)
KR (1) KR0118105B1 (en)
GB (1) GB2273605B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09307106A (en) * 1996-05-20 1997-11-28 Nec Corp Method for manufacturing semiconductor device
GB2327090A (en) * 1997-07-09 1999-01-13 British Aerospace CVD manufacturing a multilayer optical mirror using ultra-violet light
JPH11288893A (en) 1998-04-03 1999-10-19 Nec Corp Semiconductor manufacturing apparatus and semiconductor device manufacturing method
JP2000332010A (en) 1999-03-17 2000-11-30 Canon Sales Co Inc Method of forming interlayer insulating film and semiconductor device
JP2001274148A (en) * 2000-03-24 2001-10-05 Tokyo Electron Ltd System and method for plasma processing
KR100724627B1 (en) * 2005-06-30 2007-06-04 주식회사 하이닉스반도체 Method for manufacturing a semiconductor device having a step gate asymmetric recess structure
KR100713314B1 (en) * 2005-12-28 2007-05-04 동부일렉트로닉스 주식회사 PCB manufacturing method of semiconductor device
US20180076026A1 (en) * 2016-09-14 2018-03-15 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002512A (en) * 1974-09-16 1977-01-11 Western Electric Company, Inc. Method of forming silicon dioxide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002512A (en) * 1974-09-16 1977-01-11 Western Electric Company, Inc. Method of forming silicon dioxide

Also Published As

Publication number Publication date
KR940012532A (en) 1994-06-23
JPH06163523A (en) 1994-06-10
GB9323883D0 (en) 1994-01-05
GB2273605A (en) 1994-06-22
KR0118105B1 (en) 1997-09-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20071119