Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
  • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
  • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
  • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/06—Auxiliary circuits, e.g. for writing into memory
  • G11C16/10—Programming or data input circuits
  • G11C16/12—Programming voltage switching circuits
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C5/00—Details of stores covered by group G11C11/00
  • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
  • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/06—Modifications for ensuring a fully conducting state
  • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/10—Modifications for increasing the maximum permissible switched voltage
  • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
  • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
  • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
  • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
  • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
  • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
  • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Semiconductor Integrated Circuits (AREA)
• Logic Circuits (AREA)
• Read Only Memory (AREA)
• Electronic Switches (AREA)
• Non-Volatile Memory (AREA)
• Dc-Dc Converters (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Semiconductor Memories (AREA)

Priority Applications (1)

Applications Claiming Priority (1)

Publications (3)

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Family Applications (1)

Country Status (7)

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Citations (4)

Family Cites Families (4)

• 1991
  • 1991-12-28 KR KR1019910024801A patent/KR940008206B1/en not_active Expired - Fee Related
• 1992
  • 1992-10-21 TW TW081108372A patent/TW209926B/zh not_active IP Right Cessation
  • 1992-11-12 FR FR9213607A patent/FR2685807B1/en not_active Expired - Fee Related
  • 1992-12-17 DE DE4242801A patent/DE4242801C2/en not_active Expired - Fee Related
  • 1992-12-22 IT ITMI922927A patent/IT1256217B/en active IP Right Grant
  • 1992-12-23 GB GB9226862A patent/GB2262850B/en not_active Expired - Fee Related
  • 1992-12-25 JP JP34656292A patent/JP2677747B2/en not_active Expired - Fee Related

Patent Citations (4)

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