GB2135594B - Ribbon growth of crystals - Google Patents

Ribbon growth of crystals

Info

Publication number: GB2135594B
Authority: GB; United Kingdom
Prior art keywords: crystals; ribbon growth; ribbon; growth
Prior art date: 1980-01-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08400734A

Other versions

GB8400734D0 (en

GB2135594A (en

Inventor

Emanuel Michael Sachs

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Individual

Original Assignee

Individual

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-01-07

Filing date

1984-01-12

Publication date

1985-05-15

1980-01-07 Priority claimed from US06/109,865 external-priority patent/US4661200A/en

1984-01-12 Application filed by Individual filed Critical Individual

1984-02-15 Publication of GB8400734D0 publication Critical patent/GB8400734D0/en

1984-09-05 Publication of GB2135594A publication Critical patent/GB2135594A/en

1985-05-15 Application granted granted Critical

1985-05-15 Publication of GB2135594B publication Critical patent/GB2135594B/en

Status Expired legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Mechanical Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

GB08400734A 1980-01-07 1984-01-12 Ribbon growth of crystals Expired GB2135594B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US06/109,865 US4661200A (en)	1980-01-07	1980-01-07	String stabilized ribbon growth
US21474180A	1980-12-11	1980-12-11

Publications (3)

Publication Number	Publication Date
GB8400734D0 GB8400734D0 (en)	1984-02-15
GB2135594A GB2135594A (en)	1984-09-05
GB2135594B true GB2135594B (en)	1985-05-15

Family

ID=26807452

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
GB8041489A Expired GB2067920B (en)	1980-01-07	1980-12-30	String stabilised ribbon growth of crystals
GB08400734A Expired GB2135594B (en)	1980-01-07	1984-01-12	Ribbon growth of crystals
GB08400735A Expired GB2135595B (en)	1980-01-07	1984-01-12	String stabilised crystal growth

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
GB8041489A Expired GB2067920B (en)	1980-01-07	1980-12-30	String stabilised ribbon growth of crystals

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
GB08400735A Expired GB2135595B (en)	1980-01-07	1984-01-12	String stabilised crystal growth

Country Status (6)

Country	Link
CA (1)	CA1169336A (en)
DE (1)	DE3100245A1 (en)
FR (1)	FR2473072A1 (en)
GB (3)	GB2067920B (en)
IL (1)	IL61852A (en)
IT (1)	IT1143254B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4689109A (en) *	1980-12-11	1987-08-25	Sachs Emanuel M	String stabilized ribbon growth a method for seeding same
US4659421A (en) *	1981-10-02	1987-04-21	Energy Materials Corporation	System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
DE3240245A1 (en) *	1982-10-29	1984-05-03	Siemens AG, 1000 Berlin und 8000 München	DEVICE FOR PRODUCING TAPE-SHAPED SILICON BODIES FOR SOLAR CELLS
EP0170119B1 (en) *	1984-07-31	1988-10-12	Siemens Aktiengesellschaft	Process and apparatus for making silicon crystal films with a horizontal pulling direction
FR2568490B1 (en) *	1984-08-02	1986-12-05	Comp Generale Electricite	METHOD AND DEVICE FOR DEPOSITING A POLYCRYSTALLINE SILICON LAYER ON A CARBON TAPE
US4861416A (en) *	1985-04-04	1989-08-29	The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration	Ribbon growing method and apparatus
US6402839B1 (en)	1998-08-14	2002-06-11	Ebara Solar, Inc.	System for stabilizing dendritic web crystal growth
US6482261B2 (en)	2000-12-29	2002-11-19	Ebara Solar, Inc.	Magnetic field furnace
ATE373119T1 (en)	2002-10-18	2007-09-15	Evergreen Solar Inc	METHOD AND DEVICE FOR GROWING CRYSTAL
US6814802B2 (en)	2002-10-30	2004-11-09	Evergreen Solar, Inc.	Method and apparatus for growing multiple crystalline ribbons from a single crucible
US20080134964A1 (en) *	2006-12-06	2008-06-12	Evergreen Solar, Inc.	System and Method of Forming a Crystal
FR2913434B1 (en) *	2007-03-08	2009-11-20	Apollon Solar	DEVICE AND METHOD FOR MANUFACTURING SELF-SUPPORTED PLATES OF SILICON OR OTHER CRYSTALLINE MATERIALS.
US8304057B2 (en)	2007-08-31	2012-11-06	Max Era, Inc.	Ribbon crystal end string with multiple individual strings
MX2010002309A (en) *	2007-08-31	2010-03-22	Evergreen Solar Inc	Ribbon crystal string for increasing wafer yield.
EP2324146B1 (en)	2008-08-18	2013-05-29	Max Era, Inc.	Method and apparatus for growing a ribbon crystal while controlling transport of gas borne contaminants across a ribbon surface
EP2622648A1 (en) *	2010-10-01	2013-08-07	Evergreen Solar, Inc.	Sheet wafer processing as a function of wafer weight
US20120164379A1 (en) *	2010-12-22	2012-06-28	Evergreen Solar, Inc.	Wide Sheet Wafer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB796878A (en) *	1955-06-27	1958-06-18	Telefunken Gmbh	Improvements in or relating to methods of stirring molten electrically conductive material
NL113205C (en) *	1958-08-28	1900-01-01
US3129061A (en) *	1961-03-27	1964-04-14	Westinghouse Electric Corp	Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
US3298795A (en) *	1964-03-23	1967-01-17	Westinghouse Electric Corp	Process for controlling dendritic crystal growth
NL124684C (en) *	1964-07-29	1900-01-01
US3370927A (en) *	1966-02-28	1968-02-27	Westinghouse Electric Corp	Method of angularly pulling continuous dendritic crystals
GB1271493A (en) *	1968-05-09	1972-04-19	Stanelco Thermatron Ltd	Improved treatment process
US3639718A (en) *	1970-06-15	1972-02-01	Little Inc A	Pressure- and temperature-controlled crystal growing apparatus
US3865554A (en) *	1971-09-23	1975-02-11	Little Inc A	Pressure-and temperature-controlled apparatus for large-scale production of crystals by the czochralski technique
GB1498925A (en) *	1975-02-07	1978-01-25	Philips Electronic Associated	Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured
DE2520764A1 (en) *	1975-05-09	1976-11-18	Siemens Ag	Single crystal ribbon pulling from fused semiconductor material - through orifice in salt bath to reduce surface tension

1980
- 1980-12-22 CA CA000367354A patent/CA1169336A/en not_active Expired
- 1980-12-30 GB GB8041489A patent/GB2067920B/en not_active Expired
1981
- 1981-01-05 IL IL61852A patent/IL61852A/en not_active IP Right Cessation
- 1981-01-07 DE DE19813100245 patent/DE3100245A1/en active Granted
- 1981-01-07 FR FR8100172A patent/FR2473072A1/en active Granted
- 1981-01-07 IT IT67008/81A patent/IT1143254B/en active
1984
- 1984-01-12 GB GB08400734A patent/GB2135594B/en not_active Expired
- 1984-01-12 GB GB08400735A patent/GB2135595B/en not_active Expired

Also Published As

Publication number	Publication date
GB2067920A (en)	1981-08-05
GB2135595A (en)	1984-09-05
GB8400734D0 (en)	1984-02-15
IT8167008A0 (en)	1981-01-07
GB2135595B (en)	1985-05-22
DE3100245A1 (en)	1982-01-14
DE3100245C2 (en)	1990-07-05
IT1143254B (en)	1986-10-22
GB2067920B (en)	1984-10-24
FR2473072A1 (en)	1981-07-10
GB2135594A (en)	1984-09-05
FR2473072B1 (en)	1984-09-14
CA1169336A (en)	1984-06-19
GB8400735D0 (en)	1984-02-15
IL61852A (en)	1984-05-31

Publication	Publication Date	Title
GB2104410B (en)	1984-12-12	Crystal growing
GB2163672B (en)	1987-07-29	Single crystal growth apparatus
JPS5727996A (en)	1982-02-15	Manufacture of single crystal
GB8333328D0 (en)	1984-01-18	String stabilized ribbon growth
GB2135594B (en)	1985-05-15	Ribbon growth of crystals
GB2103105B (en)	1985-03-27	Crystal growing
GB2070968B (en)	1984-05-02	Controlled atmosphere for crystal growth
GB2043482B (en)	1982-12-08	Crystal growth
GB2084483B (en)	1984-02-15	Method of manufacturing single crystals
GB8421162D0 (en)	1984-09-26	Growth of semi-conductors
DE3365149D1 (en)	1986-09-11	Pulling method of single crystals
GB2095575B (en)	1984-09-26	Crystal growth apparatus
GB2085884B (en)	1984-03-28	Crystals of b-nicotinamide-adenine-dinucleotide and process for preparing the same
GB2147217B (en)	1987-03-04	Growing massecuite crystals
DE3466785D1 (en)	1987-11-19	Apparatus for the growth of single crystals
DE3568801D1 (en)	1989-04-20	Growth of single crystal cadmium-indium-telluride
JPS57110690A (en)	1982-07-09	Growing of tentrite by electroplating
GB2153700B (en)	1987-05-13	Crystal growth
GB2079175B (en)	1983-12-07	Growing crystals
GB8317879D0 (en)	1983-08-03	Performing solution growth of znse crystals
GB2078706B (en)	1983-08-03	Ferrite single crystals
GB2074891B (en)	1983-11-23	Growing crystals
GB8323225D0 (en)	1983-09-28	Controlling diameter of growing single crystal
JPS57132810A (en)	1982-08-17	Growing of giant nandin
JPS5742596A (en)	1982-03-10	Device for carrying out group growth of single crystal

Legal Events

Date	Code	Title	Description
1992-08-26	PCNP	Patent ceased through non-payment of renewal fee