[go: up one dir, main page]

GB2135123B - Multi-level metallization structure for semiconductor device and method of making same - Google Patents

Multi-level metallization structure for semiconductor device and method of making same

Info

Publication number
GB2135123B
GB2135123B GB08402109A GB8402109A GB2135123B GB 2135123 B GB2135123 B GB 2135123B GB 08402109 A GB08402109 A GB 08402109A GB 8402109 A GB8402109 A GB 8402109A GB 2135123 B GB2135123 B GB 2135123B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
making same
metallization structure
level metallization
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08402109A
Other versions
GB8402109D0 (en
GB2135123A (en
Inventor
Albert Wayne Fisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8402109D0 publication Critical patent/GB8402109D0/en
Publication of GB2135123A publication Critical patent/GB2135123A/en
Application granted granted Critical
Publication of GB2135123B publication Critical patent/GB2135123B/en
Expired legal-status Critical Current

Links

Classifications

    • H10W20/064
    • H10W72/071
    • H10W20/056
    • H10W20/4405
GB08402109A 1983-02-10 1984-01-26 Multi-level metallization structure for semiconductor device and method of making same Expired GB2135123B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46564083A 1983-02-10 1983-02-10

Publications (3)

Publication Number Publication Date
GB8402109D0 GB8402109D0 (en) 1984-02-29
GB2135123A GB2135123A (en) 1984-08-22
GB2135123B true GB2135123B (en) 1987-05-20

Family

ID=23848579

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08402109A Expired GB2135123B (en) 1983-02-10 1984-01-26 Multi-level metallization structure for semiconductor device and method of making same

Country Status (7)

Country Link
JP (1) JPH0666313B2 (en)
KR (1) KR910008104B1 (en)
CA (1) CA1209281A (en)
GB (1) GB2135123B (en)
IT (1) IT1213136B (en)
SE (1) SE501466C2 (en)
YU (1) YU18284A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763064B2 (en) 1986-03-31 1995-07-05 株式会社日立製作所 Wiring connection method for IC element
JPH0719841B2 (en) * 1987-10-02 1995-03-06 株式会社東芝 Semiconductor device
USRE36475E (en) 1993-09-15 1999-12-28 Hyundai Electronics Industries Co., Ltd. Method of forming a via plug in a semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112292A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device
JPS55156365A (en) * 1979-05-24 1980-12-05 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
GB8402109D0 (en) 1984-02-29
SE8400592D0 (en) 1984-02-06
JPS59205739A (en) 1984-11-21
KR910008104B1 (en) 1991-10-07
SE8400592L (en) 1984-08-11
YU18284A (en) 1987-12-31
IT8419546A0 (en) 1984-02-09
GB2135123A (en) 1984-08-22
IT1213136B (en) 1989-12-14
KR840008215A (en) 1984-12-13
SE501466C2 (en) 1995-02-20
CA1209281A (en) 1986-08-05
JPH0666313B2 (en) 1994-08-24

Similar Documents

Publication Publication Date Title
EP0146895A3 (en) Method of manufacturing semiconductor device
DE3476841D1 (en) Compound semiconductor device and method of producing it
EP0162677A3 (en) Semiconductor device and method for producing same
DE3479548D1 (en) Semiconductor device and method of manufacture thereof
DE3565339D1 (en) Semiconductor memory device and method of manufacturing the same
DE3361832D1 (en) Semiconductor ic and method of making the same
DE3473531D1 (en) Method of forming semiconductor devices
JPS5763855A (en) Semiconductor device and method of producing same
JPS5749247A (en) Semiconductor wafer and method of producing same
JPS57162363A (en) Semiconductor device and method of producing same
GB8813303D0 (en) Method of manufacturing semiconductor device
KR930005944B1 (en) Manufacturing method of semiconductor device
EP0135942A3 (en) Semiconductor memory and method of producing the same
GB2198584B (en) Semiconductor device and method of making the same
GB8815442D0 (en) Method of manufacturing semiconductor device
EP0111899A3 (en) Semiconductor device and method of manufacturing the same
EP0107416A3 (en) Method of producing semiconductor device
EP0232082A3 (en) Semiconductor deposition method and device
KR910009785B1 (en) Semiconductor memory device and method of fabrication therefor
EP0229362A3 (en) Semiconductor device and method of fabrication
JPS57162375A (en) Amorphous silicon pin semiconductor device and method of producing same
GB8819232D0 (en) Method of producing semiconductor device
EP0370775A3 (en) Method of manufacturing semiconductor device
EP0197284A3 (en) Method of producing semiconductor memory device
GB8801171D0 (en) Method of manufacturing semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970126