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GB2132017B - Semiconductor device array - Google Patents

Semiconductor device array

Info

Publication number
GB2132017B
GB2132017B GB08333116A GB8333116A GB2132017B GB 2132017 B GB2132017 B GB 2132017B GB 08333116 A GB08333116 A GB 08333116A GB 8333116 A GB8333116 A GB 8333116A GB 2132017 B GB2132017 B GB 2132017B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device array
array
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08333116A
Other versions
GB2132017A (en
GB8333116D0 (en
Inventor
Gerald Martin Williams
Neil Thomson Gordon
Anthony Brian Dean
Ian Malcolm Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SECR DEFENCE
UK Secretary of State for Defence
Original Assignee
SECR DEFENCE
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SECR DEFENCE, UK Secretary of State for Defence filed Critical SECR DEFENCE
Priority to GB08333116A priority Critical patent/GB2132017B/en
Publication of GB8333116D0 publication Critical patent/GB8333116D0/en
Publication of GB2132017A publication Critical patent/GB2132017A/en
Application granted granted Critical
Publication of GB2132017B publication Critical patent/GB2132017B/en
Expired legal-status Critical Current

Links

Classifications

    • H10W10/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10P14/22—
    • H10P14/271—
    • H10P14/2912—
    • H10P14/3228—
    • H10P14/3432—
    • H10P14/3442—
    • H10W10/10—
GB08333116A 1982-12-16 1983-12-12 Semiconductor device array Expired GB2132017B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08333116A GB2132017B (en) 1982-12-16 1983-12-12 Semiconductor device array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8235841 1982-12-16
GB08333116A GB2132017B (en) 1982-12-16 1983-12-12 Semiconductor device array

Publications (3)

Publication Number Publication Date
GB8333116D0 GB8333116D0 (en) 1984-01-18
GB2132017A GB2132017A (en) 1984-06-27
GB2132017B true GB2132017B (en) 1986-12-03

Family

ID=26284703

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08333116A Expired GB2132017B (en) 1982-12-16 1983-12-12 Semiconductor device array

Country Status (1)

Country Link
GB (1) GB2132017B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
GB2282722B (en) * 1987-07-30 1995-08-09 Buck Chem Tech Werke Infra-red search head for the location of enemy helicopters
US5079616A (en) * 1988-02-11 1992-01-07 Gte Laboratories Incorporated Semiconductor structure
US5272105A (en) * 1988-02-11 1993-12-21 Gte Laboratories Incorporated Method of manufacturing an heteroepitaxial semiconductor structure
US5238869A (en) * 1988-07-25 1993-08-24 Texas Instruments Incorporated Method of forming an epitaxial layer on a heterointerface
EP0352472A3 (en) * 1988-07-25 1991-02-06 Texas Instruments Incorporated Heteroepitaxy of lattice-mismatched semiconductor materials
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface
KR20070061531A (en) 2004-08-02 2007-06-13 키네티큐 리미티드 Preparation of Cadmium Mercury Telluride on Patterned Silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681668A (en) * 1967-11-14 1972-08-01 Sony Corp Semiconductor device and a method of making the same
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3725751A (en) * 1969-02-03 1973-04-03 Sony Corp Solid state target electrode for pickup tubes
GB1289651A (en) * 1970-01-20 1972-09-20
US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices

Also Published As

Publication number Publication date
GB2132017A (en) 1984-06-27
GB8333116D0 (en) 1984-01-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee