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GB2130009B - Polycrystalline silicon layers for semiconductor devices - Google Patents

Polycrystalline silicon layers for semiconductor devices

Info

Publication number
GB2130009B
GB2130009B GB08329381A GB8329381A GB2130009B GB 2130009 B GB2130009 B GB 2130009B GB 08329381 A GB08329381 A GB 08329381A GB 8329381 A GB8329381 A GB 8329381A GB 2130009 B GB2130009 B GB 2130009B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
polycrystalline silicon
silicon layers
layers
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08329381A
Other versions
GB8329381D0 (en
GB2130009A (en
Inventor
Alois Erhard Widmer
Gunther Harbeke
Liselotte Krausbauer
Edgar Felix Steigmeier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8329381D0 publication Critical patent/GB8329381D0/en
Publication of GB2130009A publication Critical patent/GB2130009A/en
Application granted granted Critical
Publication of GB2130009B publication Critical patent/GB2130009B/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/416—
    • H10P95/00—
GB08329381A 1982-11-12 1983-11-03 Polycrystalline silicon layers for semiconductor devices Expired GB2130009B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44137182A 1982-11-12 1982-11-12

Publications (3)

Publication Number Publication Date
GB8329381D0 GB8329381D0 (en) 1983-12-07
GB2130009A GB2130009A (en) 1984-05-23
GB2130009B true GB2130009B (en) 1986-04-03

Family

ID=23752618

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08329381A Expired GB2130009B (en) 1982-11-12 1983-11-03 Polycrystalline silicon layers for semiconductor devices

Country Status (6)

Country Link
JP (1) JPH0652715B2 (en)
DE (1) DE3340584A1 (en)
FR (1) FR2536210B1 (en)
GB (1) GB2130009B (en)
IT (1) IT1171797B (en)
SE (1) SE500463C2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7949237B2 (en) 2000-12-21 2011-05-24 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
US4789883A (en) * 1985-12-17 1988-12-06 Advanced Micro Devices, Inc. Integrated circuit structure having gate electrode and underlying oxide and method of making same
EP0253014B1 (en) * 1986-07-18 1990-04-11 Nippondenso Co., Ltd. Method of manufacturing a monvolatile semiconductor memory apparatus with writing and erasing capability
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
JP2690917B2 (en) * 1987-12-07 1997-12-17 株式会社日立製作所 Thin film forming method and semiconductor device manufacturing method
FR2627012B1 (en) * 1988-02-10 1990-06-01 France Etat METHOD FOR DEPOSITING A POLYCRYSTALLINE LAYER WITH LARGE GRAIN, LAYER OBTAINED AND TRANSISTOR PROVIDED WITH SUCH A LAYER
DE69030864T2 (en) * 1989-12-01 1997-11-13 Texas Instruments Inc Process of in-situ doping of deposited silicon
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
JP2508948B2 (en) * 1991-06-21 1996-06-19 日本電気株式会社 Method for manufacturing semiconductor device
GB2293691B (en) * 1991-09-07 1996-06-19 Samsung Electronics Co Ltd Semiconductor memory devices
KR960026821A (en) * 1994-12-20 1996-07-22 김주용 Capacitor Manufacturing Method
KR100295718B1 (en) * 1995-06-06 2001-09-03 아사히 가세이 마이크로시스템 가부시끼가이샤 Semiconductor device and method of production thereof
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558815B2 (en) * 1973-06-29 1980-03-06
DE2536174C3 (en) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Process for producing polycrystalline silicon layers for semiconductor components
JPS5249782A (en) * 1975-10-20 1977-04-21 Fujitsu Ltd Process for production of semiconductor device
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
FR2394173A1 (en) * 1977-06-06 1979-01-05 Thomson Csf METHOD OF MANUFACTURING ELECTRONIC DEVICES WHICH INCLUDE A THIN LAYER OF AMORPHIC SILICON AND AN ELECTRONIC DEVICE OBTAINED BY SUCH A PROCESS
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7949237B2 (en) 2000-12-21 2011-05-24 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers

Also Published As

Publication number Publication date
DE3340584A1 (en) 1984-05-17
GB8329381D0 (en) 1983-12-07
DE3340584C2 (en) 1993-02-11
JPS59100561A (en) 1984-06-09
IT8323690A0 (en) 1983-11-11
JPH0652715B2 (en) 1994-07-06
FR2536210A1 (en) 1984-05-18
FR2536210B1 (en) 1986-03-28
SE8306070L (en) 1984-05-13
SE8306070D0 (en) 1983-11-04
IT1171797B (en) 1987-06-10
GB2130009A (en) 1984-05-23
SE500463C2 (en) 1994-06-27

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20031102