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GB2128636B - Silicon-aluminium alloy metallization of semiconductor substrate - Google Patents

Silicon-aluminium alloy metallization of semiconductor substrate

Info

Publication number
GB2128636B
GB2128636B GB08229877A GB8229877A GB2128636B GB 2128636 B GB2128636 B GB 2128636B GB 08229877 A GB08229877 A GB 08229877A GB 8229877 A GB8229877 A GB 8229877A GB 2128636 B GB2128636 B GB 2128636B
Authority
GB
United Kingdom
Prior art keywords
silicon
semiconductor substrate
aluminium alloy
alloy metallization
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08229877A
Other versions
GB2128636A (en
Inventor
Alastair James Malcolm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions UK Ltd
Original Assignee
Motorola Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Ltd filed Critical Motorola Ltd
Priority to GB08229877A priority Critical patent/GB2128636B/en
Publication of GB2128636A publication Critical patent/GB2128636A/en
Application granted granted Critical
Publication of GB2128636B publication Critical patent/GB2128636B/en
Priority to SG52688A priority patent/SG52688G/en
Priority to HK7/89A priority patent/HK789A/en
Expired legal-status Critical Current

Links

Classifications

    • H10D64/0111—
GB08229877A 1982-10-19 1982-10-19 Silicon-aluminium alloy metallization of semiconductor substrate Expired GB2128636B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB08229877A GB2128636B (en) 1982-10-19 1982-10-19 Silicon-aluminium alloy metallization of semiconductor substrate
SG52688A SG52688G (en) 1982-10-19 1988-08-04 Alloy metallization
HK7/89A HK789A (en) 1982-10-19 1989-01-05 Alloy metallization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08229877A GB2128636B (en) 1982-10-19 1982-10-19 Silicon-aluminium alloy metallization of semiconductor substrate

Publications (2)

Publication Number Publication Date
GB2128636A GB2128636A (en) 1984-05-02
GB2128636B true GB2128636B (en) 1986-01-08

Family

ID=10533701

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08229877A Expired GB2128636B (en) 1982-10-19 1982-10-19 Silicon-aluminium alloy metallization of semiconductor substrate

Country Status (3)

Country Link
GB (1) GB2128636B (en)
HK (1) HK789A (en)
SG (1) SG52688G (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3426201A1 (en) * 1984-07-17 1986-01-23 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau PROCESS FOR APPLYING PROTECTIVE LAYERS
JPS6197823A (en) * 1984-10-18 1986-05-16 Fujitsu Ltd Manufacture of semiconductor device
JPS62111421A (en) * 1985-11-09 1987-05-22 Mitsubishi Electric Corp Proportional control method for metal silicide film composition
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
EP0430403B1 (en) 1989-11-30 1998-01-07 STMicroelectronics, Inc. Method for fabricating interlevel contacts
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US5108951A (en) * 1990-11-05 1992-04-28 Sgs-Thomson Microelectronics, Inc. Method for forming a metal contact
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
KR920010620A (en) * 1990-11-30 1992-06-26 원본미기재 How to Form Aluminum Stacked Contacts / Pathways for Multi-layer Interconnect Lines
EP0594300B1 (en) * 1992-09-22 1998-07-29 STMicroelectronics, Inc. Method for forming a metal contact
DE4424420A1 (en) * 1994-07-12 1996-01-18 Telefunken Microelectron Contacting process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
FR1474973A (en) * 1966-02-16 1967-03-31 Radiotechnique Coprim Rtc Method of manufacturing a contact layer for semiconductor devices and products obtained
US3574680A (en) * 1968-05-07 1971-04-13 Ibm High-low ohmic contact deposition method
US3934059A (en) * 1974-02-04 1976-01-20 Rca Corporation Method of vapor deposition
GB2038883B (en) * 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices

Also Published As

Publication number Publication date
SG52688G (en) 1989-01-27
HK789A (en) 1989-01-13
GB2128636A (en) 1984-05-02

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee