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GB2125215B - Gated drode - Google Patents

Gated drode

Info

Publication number
GB2125215B
GB2125215B GB08302987A GB8302987A GB2125215B GB 2125215 B GB2125215 B GB 2125215B GB 08302987 A GB08302987 A GB 08302987A GB 8302987 A GB8302987 A GB 8302987A GB 2125215 B GB2125215 B GB 2125215B
Authority
GB
United Kingdom
Prior art keywords
drode
gated
gated drode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08302987A
Other versions
GB2125215A (en
GB8302987D0 (en
Inventor
William Henry Owen
Richard Thomas Simko
Wallace Edward Tchon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/071,498 external-priority patent/US4326134A/en
Priority claimed from US06/071,499 external-priority patent/US4263664A/en
Application filed by Xicor LLC filed Critical Xicor LLC
Publication of GB8302987D0 publication Critical patent/GB8302987D0/en
Publication of GB2125215A publication Critical patent/GB2125215A/en
Application granted granted Critical
Publication of GB2125215B publication Critical patent/GB2125215B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
GB08302987A 1979-08-31 1983-02-03 Gated drode Expired GB2125215B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/071,498 US4326134A (en) 1979-08-31 1979-08-31 Integrated rise-time regulated voltage generator systems
US06/071,499 US4263664A (en) 1979-08-31 1979-08-31 Nonvolatile static random access memory system

Publications (3)

Publication Number Publication Date
GB8302987D0 GB8302987D0 (en) 1983-03-09
GB2125215A GB2125215A (en) 1984-02-29
GB2125215B true GB2125215B (en) 1984-08-22

Family

ID=26752295

Family Applications (3)

Application Number Title Priority Date Filing Date
GB8027789A Expired GB2058502B (en) 1979-08-31 1980-08-28 Integrated rise time regulated voltage generator systems
GB8027809A Expired GB2061045B (en) 1979-08-31 1980-08-28 Nonvolatile static random access memory system
GB08302987A Expired GB2125215B (en) 1979-08-31 1983-02-03 Gated drode

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB8027789A Expired GB2058502B (en) 1979-08-31 1980-08-28 Integrated rise time regulated voltage generator systems
GB8027809A Expired GB2061045B (en) 1979-08-31 1980-08-28 Nonvolatile static random access memory system

Country Status (3)

Country Link
GB (3) GB2058502B (en)
IT (2) IT1143098B (en)
NL (2) NL8004857A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488060A (en) * 1979-01-24 1984-12-11 Xicor, Inc. High voltage ramp rate control systems
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
US4481566A (en) * 1983-04-04 1984-11-06 International Business Machines Corporation On chip charge trap compensated high voltage converter
IT1215224B (en) * 1983-08-04 1990-01-31 Ates Componenti Elettron INTEGRATED STRUCTURE MICROCALCULATOR WITH NON VOLATILE RAM MEMORY.
JPS61117915A (en) * 1984-11-13 1986-06-05 Fujitsu Ltd Delay circuit
JPS63290159A (en) * 1987-05-20 1988-11-28 Matsushita Electric Ind Co Ltd Booster circuit
JP2645417B2 (en) * 1987-09-19 1997-08-25 富士通株式会社 Non-volatile memory device
NL8800287A (en) * 1988-02-08 1989-09-01 Philips Nv MEMORY CIRCUIT WITH AN ERASABLE PROGRAMMABLE MEMORY, GENERATOR FOR GENERATING A PROGRAMMING VOLTAGE FOR MEMORY, VOLTAGE REGULATOR AND FLANK REGULATOR, BOTH SUITABLE FOR APPLICATION IN THE GENERATOR.
FR2776838B1 (en) * 1998-03-26 2003-06-13 Sgs Thomson Microelectronics METHOD FOR MANUFACTURING A ZENER TYPE DIODE WITH VARIABLE THRESHOLD

Also Published As

Publication number Publication date
IT1143098B (en) 1986-10-22
IT8049575A1 (en) 1982-03-01
IT1188950B (en) 1988-01-28
IT8049575A0 (en) 1980-08-29
GB2125215A (en) 1984-02-29
NL8004857A (en) 1981-03-03
GB2061045A (en) 1981-05-07
GB8302987D0 (en) 1983-03-09
IT8049574A0 (en) 1980-08-29
GB2058502A (en) 1981-04-08
NL8004852A (en) 1981-03-03
GB2058502B (en) 1984-02-08
GB2061045B (en) 1984-06-20

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20000827