GB2124427B - Insulated gate semiconductor devices - Google Patents

Insulated gate semiconductor devices

Info

Publication number: GB2124427B
Authority: GB; United Kingdom
Prior art keywords: semiconductor devices; insulated gate; gate semiconductor; insulated; devices
Prior art date: 1982-07-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08317467A

Other versions

GB8317467D0 (en

GB2124427A (en

Inventor

Victor Albert Keith Temple

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

General Electric Co

Original Assignee

General Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-07-08

Filing date

1983-06-28

Publication date

1986-01-08

1983-06-28 Application filed by General Electric Co filed Critical General Electric Co

1983-08-03 Publication of GB8317467D0 publication Critical patent/GB8317467D0/en

1984-02-15 Publication of GB2124427A publication Critical patent/GB2124427A/en

1986-01-08 Application granted granted Critical

1986-01-08 Publication of GB2124427B publication Critical patent/GB2124427B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
- H10D18/65—Gate-turn-off devices with turn-off by field effect
- H10D18/655—Gate-turn-off devices with turn-off by field effect produced by insulated gate structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode
- H10D84/0105—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode the built-in components being field-effect devices

GB08317467A 1982-07-08 1983-06-28 Insulated gate semiconductor devices Expired GB2124427B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US39622682A	1982-07-08	1982-07-08

Publications (3)

Publication Number	Publication Date
GB8317467D0 GB8317467D0 (en)	1983-08-03
GB2124427A GB2124427A (en)	1984-02-15
GB2124427B true GB2124427B (en)	1986-01-08

Family

ID=23566380

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08317467A Expired GB2124427B (en)	1982-07-08	1983-06-28	Insulated gate semiconductor devices

Country Status (4)

Country	Link
JP (1)	JPS5936970A (en)
DE (1)	DE3322669C2 (en)
FR (1)	FR2530079B1 (en)
GB (1)	GB2124427B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3346286A1 (en) *	1982-12-21	1984-06-28	International Rectifier Corp., Los Angeles, Calif.	High-power metal-oxide field-effect transistor semiconductor component
JP2552880B2 (en) *	1986-11-12	1996-11-13	シリコニックス・インコーポレイテッド	Vertical DMOS cell structure
GB8810973D0 (en) *	1988-05-10	1988-06-15	Stc Plc	Improvements in integrated circuits
JPH06244429A (en) *	1992-12-24	1994-09-02	Mitsubishi Electric Corp	Insulated gate type semiconductor device and manufacturing method thereof
JP5213520B2 (en) *	2008-05-14	2013-06-19	三菱電機株式会社	Manufacturing method of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL170348C (en) *	1970-07-10	1982-10-18	Philips Nv	METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING TO A SURFACE OF A SEMICONDUCTOR BODY AGAINST DOTTING AND AGAINST THERMAL OXIDICATION MASK MATERIAL, PRE-FRIENDLY COVERING THE WINDOWS OF THE WINDOWS IN THE MATERIALS The semiconductor body with the mask is subjected to a thermal oxidation treatment to form an oxide pattern that at least partially fills in the recesses.
US4055884A (en) *	1976-12-13	1977-11-01	International Business Machines Corporation	Fabrication of power field effect transistors and the resulting structures
US4212683A (en) *	1978-03-27	1980-07-15	Ncr Corporation	Method for making narrow channel FET
CA1138571A (en) *	1978-12-15	1982-12-28	Wolfgang M. Feist	Semiconductor structures and manufacturing methods
FR2460542A1 (en) *	1979-06-29	1981-01-23	Thomson Csf	VERTICAL POWER FIELD EFFECT TRANSISTOR FOR HIGH FREQUENCIES AND METHOD OF MAKING SUCH A TRANSISTOR
DE2926874A1 (en) *	1979-07-03	1981-01-22	Siemens Ag	METHOD FOR PRODUCING LOW-RESISTANT, DIFFUSED AREAS IN SILICON GATE TECHNOLOGY
US4593302B1 (en) *	1980-08-18	1998-02-03	Int Rectifier Corp	Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide

1983
- 1983-06-23 DE DE3322669A patent/DE3322669C2/en not_active Expired
- 1983-06-28 GB GB08317467A patent/GB2124427B/en not_active Expired
- 1983-07-08 JP JP58123526A patent/JPS5936970A/en active Granted
- 1983-07-08 FR FR838311463A patent/FR2530079B1/en not_active Expired

Also Published As

Publication number	Publication date
DE3322669C2 (en)	1986-04-24
FR2530079B1 (en)	1985-07-26
DE3322669A1 (en)	1984-01-12
JPH0363210B2 (en)	1991-09-30
GB8317467D0 (en)	1983-08-03
FR2530079A1 (en)	1984-01-13
JPS5936970A (en)	1984-02-29
GB2124427A (en)	1984-02-15

Publication	Publication Date	Title
GB2103877B (en)	1985-07-03	Gate protection for insulated gate semiconductor devices
GB2131603B (en)	1985-12-18	Semiconductor devices
GB8302769D0 (en)	1983-03-02	Semiconductor device
GB8311430D0 (en)	1983-06-02	Semiconductor device manufacture
DE3463873D1 (en)	1987-06-25	Semiconductor devices
GB8317126D0 (en)	1983-07-27	Manufacturing semiconductor devices
GB8300539D0 (en)	1983-02-09	Semiconductor device
GB8324448D0 (en)	1983-10-12	Semiconductor device
GB8332597D0 (en)	1984-01-11	Semiconductor device
GB8331916D0 (en)	1984-01-04	Semiconductor devices
EP0042489A3 (en)	1982-06-16	Semiconductor devices
GB2129213B (en)	1986-06-25	Semiconductor device with dielectric isolation
GB8333893D0 (en)	1984-02-01	Semiconductor device
GB8333817D0 (en)	1984-02-01	Semiconductor devices
GB8325513D0 (en)	1983-10-26	Semiconductor device
DE3379883D1 (en)	1989-06-22	Semiconductor device
DE3173835D1 (en)	1986-03-27	Semiconductor devices
GB8330763D0 (en)	1983-12-29	Semiconductor device
JPS55107269A (en)	1980-08-16	Complementary insulated gate semiconductor device
GB8332106D0 (en)	1984-01-11	Semiconductor device encapsulation
DE3380194D1 (en)	1989-08-17	Semiconductor device
DE3369602D1 (en)	1987-03-05	Mos type semiconductor device
GB8300945D0 (en)	1983-02-16	Semiconductor device
IE831555L (en)	1984-01-01	Semiconductor device
GB2139420B (en)	1987-04-29	Semiconductor devices

Legal Events

Date	Code	Title	Description
2003-07-23	PE20	Patent expired after termination of 20 years