GB2105100B - Laser diode - Google Patents

Laser diode

Info

Publication number: GB2105100B
Authority: GB; United Kingdom
Prior art keywords: laser diode; diode; laser
Prior art date: 1981-08-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08222520A

Other versions

GB2105100A (en

Inventor

Sawaimasaaki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-08-24

Filing date

1982-08-04

Publication date

1985-06-12

1982-08-04 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1983-03-16 Publication of GB2105100A publication Critical patent/GB2105100A/en

1985-06-12 Application granted granted Critical

1985-06-12 Publication of GB2105100B publication Critical patent/GB2105100B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H10W72/536—
- H10W72/5522—
- H10W72/884—

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

GB08222520A 1981-08-24 1982-08-04 Laser diode Expired GB2105100B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56131523A JPS5833885A (en)	1981-08-24	1981-08-24	Laser diode

Publications (2)

Publication Number	Publication Date
GB2105100A GB2105100A (en)	1983-03-16
GB2105100B true GB2105100B (en)	1985-06-12

Family

ID=15060043

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08222520A Expired GB2105100B (en)	1981-08-24	1982-08-04	Laser diode

Country Status (6)

Country	Link
JP (1)	JPS5833885A (en)
DE (1)	DE3231443A1 (en)
FR (1)	FR2511810B1 (en)
GB (1)	GB2105100B (en)
HK (1)	HK45786A (en)
IT (1)	IT1153715B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3329107A1 (en)	1983-08-11	1985-02-21	Siemens AG, 1000 Berlin und 8000 München	LASER DIODE WITH HOMOGENIZED MECHANICAL VOLTAGE AND / OR HEAT EXTRACTION
JPS60154689A (en) *	1984-01-25	1985-08-14	Hitachi Ltd	Light emitting element and lighr communication equipment using the same
GB2154059B (en) *	1984-01-25	1987-10-28	Hitachi Ltd	Light emitting chip and communication apparatus using the same
GB2156585B (en) *	1984-03-16	1987-10-21	Hitachi Ltd	Light-emitting device electrode
US4686678A (en) *	1984-03-27	1987-08-11	Nec Corporation	Semiconductor laser apparatus with isolator
DE3714523A1 (en) *	1987-04-30	1988-11-10	Siemens Ag	LASER DIODE WITH BURNED ACTIVE LAYER AND LATERAL CURRENT LIMITATION AND METHOD FOR THE PRODUCTION THEREOF
JPH06310814A (en) *	1993-04-27	1994-11-04	Nec Kansai Ltd	Semiconductor laser diode device
US8121163B2 (en)	2007-03-16	2012-02-21	Sanyo Electric Co., Ltd.	Semiconductor laser diode apparatus and method of fabricating the same
US7907652B2 (en)	2007-04-25	2011-03-15	Sanyo Electric Co., Ltd.	Semiconductor laser device
JP4573882B2 (en) *	2007-05-24	2010-11-04	三洋電機株式会社	Semiconductor laser device
US7869480B2 (en)	2007-05-24	2011-01-11	Sanyo Electric Co., Ltd.	Semiconductor laser device
JP7330128B2 (en) *	2020-04-02	2023-08-21	浜松ホトニクス株式会社	Quantum cascade laser device and quantum cascade laser device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1273698B (en) *	1964-01-08	1968-07-25	Telefunken Patent	Semiconductor device
US3763550A (en) *	1970-12-03	1973-10-09	Gen Motors Corp	Geometry for a pnp silicon transistor with overlay contacts
DE2409312C3 (en) *	1974-02-27	1981-01-08	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Semiconductor arrangement with a metal layer arranged on the semiconductor surface and method for its production
US4169997A (en) *	1977-05-06	1979-10-02	Bell Telephone Laboratories, Incorporated	Lateral current confinement in junction lasers
DE2816269C3 (en) *	1978-04-14	1981-11-26	Mitsubishi Denki K.K., Tokyo	Injection laser diode
DE2942540A1 (en) *	1978-10-25	1980-04-30	Int Standard Electric Corp	Semiconductor chip for channel-type laser - has lower substrate with raised section to limit current flow to narrow strip, extending in direction of emitted light
DE2856507A1 (en) *	1978-12-28	1980-07-17	Amann Markus Christian Dipl In	SEMICONDUCTOR LASER DIODE

1981
- 1981-08-24 JP JP56131523A patent/JPS5833885A/en active Pending
1982
- 1982-07-05 FR FR8211729A patent/FR2511810B1/en not_active Expired
- 1982-08-04 GB GB08222520A patent/GB2105100B/en not_active Expired
- 1982-08-18 IT IT22892/82A patent/IT1153715B/en active
- 1982-08-24 DE DE19823231443 patent/DE3231443A1/en not_active Withdrawn
1986
- 1986-06-19 HK HK457/86A patent/HK45786A/en unknown

Also Published As

Publication number	Publication date
FR2511810B1 (en)	1986-01-24
DE3231443A1 (en)	1983-03-24
HK45786A (en)	1986-06-27
IT8222892A1 (en)	1984-02-18
JPS5833885A (en)	1983-02-28
GB2105100A (en)	1983-03-16
IT1153715B (en)	1987-01-14
IT8222892A0 (en)	1982-08-18
FR2511810A1 (en)	1983-02-25

Publication	Publication Date	Title
GB2105099B (en)	1985-06-12	Injection laser
YU64682A (en)	1984-12-31	Laser telemeter
GB2106706B (en)	1985-07-10	Semiconductor laser
GB2105101B (en)	1985-04-11	Semiconductor laser
GB2111743B (en)	1985-11-27	Semiconductor laser
DE3262546D1 (en)	1985-04-18	Laser scalpel
EP0065761A3 (en)	1983-06-29	Laser device
GB2100501B (en)	1985-04-24	Semiconductor laser
DE3270575D1 (en)	1986-05-22	Injection lasers
GB2105100B (en)	1985-06-12	Laser diode
JPS56169389A (en)	1981-12-26	Laser diode
DE3265317D1 (en)	1985-09-19	Laser system
GB2100500B (en)	1985-01-16	Laser diode transducer
JPS57106187A (en)	1982-07-01	Laser
GB2125612B (en)	1985-12-04	Flowing-gas laser
JPS57180193A (en)	1982-11-06	Semiconductor injection laser
JPS57128145A (en)	1982-08-09	Laser knife
GB2097176B (en)	1984-12-19	Ring laser
GB2108752B (en)	1986-04-09	Laser system
DE3379916D1 (en)	1989-06-29	Laser diode printer
JPS57145285A (en)	1982-09-08	Diode box
GB2098388B (en)	1984-05-31	Dye laser
DE3267620D1 (en)	1986-01-02	Laser
JPS57159076A (en)	1982-10-01	Laser device
MY8600557A (en)	1986-12-31	Laser diode

Legal Events

Date	Code	Title	Description
1995-04-05	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19940804