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GB2103879B - Method for producing a vertical channel transistor - Google Patents

Method for producing a vertical channel transistor

Info

Publication number
GB2103879B
GB2103879B GB08222688A GB8222688A GB2103879B GB 2103879 B GB2103879 B GB 2103879B GB 08222688 A GB08222688 A GB 08222688A GB 8222688 A GB8222688 A GB 8222688A GB 2103879 B GB2103879 B GB 2103879B
Authority
GB
United Kingdom
Prior art keywords
producing
channel transistor
vertical channel
vertical
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08222688A
Other versions
GB2103879A (en
Inventor
Timothy William Janes
John Charles White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB08222688A priority Critical patent/GB2103879B/en
Publication of GB2103879A publication Critical patent/GB2103879A/en
Application granted granted Critical
Publication of GB2103879B publication Critical patent/GB2103879B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10P50/644—
GB08222688A 1981-08-19 1982-08-06 Method for producing a vertical channel transistor Expired GB2103879B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08222688A GB2103879B (en) 1981-08-19 1982-08-06 Method for producing a vertical channel transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8125375 1981-08-19
GB08222688A GB2103879B (en) 1981-08-19 1982-08-06 Method for producing a vertical channel transistor

Publications (2)

Publication Number Publication Date
GB2103879A GB2103879A (en) 1983-02-23
GB2103879B true GB2103879B (en) 1985-04-11

Family

ID=26280526

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08222688A Expired GB2103879B (en) 1981-08-19 1982-08-06 Method for producing a vertical channel transistor

Country Status (1)

Country Link
GB (1) GB2103879B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3752273T2 (en) * 1986-11-19 1999-09-09 Nishizawa Static induction transistors with an insulated gate in an incised stage and process for their production
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
DE69125323T2 (en) * 1990-07-24 1997-09-25 Semiconductor Energy Lab Methods of making insulating films, capacitors, and semiconductor devices
US5302843A (en) * 1990-07-26 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Improved vertical channel transistor
JPH0793441B2 (en) * 1992-04-24 1995-10-09 ヒュンダイ エレクトロニクス インダストリーズ カンパニー リミテッド Thin film transistor and manufacturing method thereof
DE19711482C2 (en) * 1997-03-19 1999-01-07 Siemens Ag Method of manufacturing a vertical MOS transistor
US6197641B1 (en) * 1998-08-28 2001-03-06 Lucent Technologies Inc. Process for fabricating vertical transistors
DE19846063A1 (en) * 1998-10-07 2000-04-20 Forschungszentrum Juelich Gmbh Method of manufacturing a double-gate MOSFET
FR2810792B1 (en) * 2000-06-22 2003-07-04 Commissariat Energie Atomique MIG VERTICAL BURST TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Also Published As

Publication number Publication date
GB2103879A (en) 1983-02-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee