GB2103013B - A method for producing a misfet and a misfet produces thereby - Google Patents

A method for producing a misfet and a misfet produces thereby

Info

Publication number: GB2103013B
Authority: GB; United Kingdom
Prior art keywords: misfet; produces; producing; misfet produces
Prior art date: 1981-07-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08221121A

Other versions

GB2103013A (en

Inventor

John Charles White

Timothy William Janes

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

UK Secretary of State for Defence

Original Assignee

UK Secretary of State for Defence

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-07-31

Filing date

1982-07-21

Publication date

1984-11-07

1982-07-21 Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence

1982-07-21 Priority to GB08221121A priority Critical patent/GB2103013B/en

1983-02-09 Publication of GB2103013A publication Critical patent/GB2103013A/en

1984-11-07 Application granted granted Critical

1984-11-07 Publication of GB2103013B publication Critical patent/GB2103013B/en

Status Expired legal-status Critical Current

Classifications

- H10P50/644—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
- H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations

GB08221121A 1981-07-31 1982-07-21 A method for producing a misfet and a misfet produces thereby Expired GB2103013B (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
GB08221121A GB2103013B (en)	1981-07-31	1982-07-21	A method for producing a misfet and a misfet produces thereby

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
GB8123507		1981-07-31
GB08221121A GB2103013B (en)	1981-07-31	1982-07-21	A method for producing a misfet and a misfet produces thereby

Publications (2)

Publication Number	Publication Date
GB2103013A GB2103013A (en)	1983-02-09
GB2103013B true GB2103013B (en)	1984-11-07

Family

ID=26280318

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08221121A Expired GB2103013B (en)	1981-07-31	1982-07-21	A method for producing a misfet and a misfet produces thereby

Country Status (1)

Country	Link
GB (1)	GB2103013B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2354880A (en)	1999-09-30	2001-04-04	Mitel Semiconductor Ltd	Metal oxide semiconductor field effect transistors
DE19957303B4 (en) *	1999-11-29	2006-05-11	Infineon Technologies Ag	MOS transistor and method for its production
JP2005150190A (en) *	2003-11-12	2005-06-09	Mitsubishi Electric Corp	Field effect transistor

1982
- 1982-07-21 GB GB08221121A patent/GB2103013B/en not_active Expired

Also Published As

Publication number	Publication date
GB2103013A (en)	1983-02-09

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Legal Events

Date	Code	Title	Description
1991-03-20	PCNP	Patent ceased through non-payment of renewal fee