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GB2198152B - Growth of doped semiconductor monolayers - Google Patents

Growth of doped semiconductor monolayers

Info

Publication number
GB2198152B
GB2198152B GB8727277A GB8727277A GB2198152B GB 2198152 B GB2198152 B GB 2198152B GB 8727277 A GB8727277 A GB 8727277A GB 8727277 A GB8727277 A GB 8727277A GB 2198152 B GB2198152 B GB 2198152B
Authority
GB
United Kingdom
Prior art keywords
growth
doped semiconductor
semiconductor monolayers
monolayers
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8727277A
Other versions
GB8727277D0 (en
GB2198152A (en
Inventor
Junichi Nishizawa
Hitoshi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd, Research Development Corp of Japan filed Critical Oki Electric Industry Co Ltd
Publication of GB8727277D0 publication Critical patent/GB8727277D0/en
Publication of GB2198152A publication Critical patent/GB2198152A/en
Application granted granted Critical
Publication of GB2198152B publication Critical patent/GB2198152B/en
Priority to US08/077,119 priority Critical patent/US5693139A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H10P14/24—
    • H10P14/2911—
    • H10P14/3418—
    • H10P14/3421—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
GB8727277A 1984-07-26 1987-11-20 Growth of doped semiconductor monolayers Expired - Lifetime GB2198152B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/077,119 US5693139A (en) 1984-07-26 1993-06-15 Growth of doped semiconductor monolayers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61275425A JP2577550B2 (en) 1986-11-20 1986-11-20 Impurity doping of III-V compound semiconductor single crystal thin films

Publications (3)

Publication Number Publication Date
GB8727277D0 GB8727277D0 (en) 1987-12-23
GB2198152A GB2198152A (en) 1988-06-08
GB2198152B true GB2198152B (en) 1990-12-05

Family

ID=17555334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8727277A Expired - Lifetime GB2198152B (en) 1984-07-26 1987-11-20 Growth of doped semiconductor monolayers

Country Status (4)

Country Link
JP (1) JP2577550B2 (en)
DE (1) DE3739450C2 (en)
FR (1) FR2609293B1 (en)
GB (1) GB2198152B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US5166092A (en) * 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5525156A (en) * 1989-11-24 1996-06-11 Research Development Corporation Apparatus for epitaxially growing a chemical compound crystal
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
TW515032B (en) * 1999-10-06 2002-12-21 Samsung Electronics Co Ltd Method of forming thin film using atomic layer deposition method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162862A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Process for forming monocrystalline thin film of compound semiconductor
GB2163000A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Apparatus for forming crystal of semiconductor
GB2192198A (en) * 1986-07-04 1988-01-06 Nippon Telegraph & Telephone Preparing compound semiconductor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766906B2 (en) * 1984-07-26 1995-07-19 新技術事業団 GaAs epitaxial growth method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162862A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Process for forming monocrystalline thin film of compound semiconductor
GB2163000A (en) * 1984-07-26 1986-02-12 Japan Res Dev Corp Apparatus for forming crystal of semiconductor
GB2192198A (en) * 1986-07-04 1988-01-06 Nippon Telegraph & Telephone Preparing compound semiconductor

Also Published As

Publication number Publication date
GB8727277D0 (en) 1987-12-23
JPS63129609A (en) 1988-06-02
JP2577550B2 (en) 1997-02-05
GB2198152A (en) 1988-06-08
DE3739450A1 (en) 1988-06-01
FR2609293A1 (en) 1988-07-08
DE3739450C2 (en) 1994-06-16
FR2609293B1 (en) 1993-12-10

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20071119