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GB2192095B - Semiconductor laser array - Google Patents

Semiconductor laser array

Info

Publication number
GB2192095B
GB2192095B GB8711344A GB8711344A GB2192095B GB 2192095 B GB2192095 B GB 2192095B GB 8711344 A GB8711344 A GB 8711344A GB 8711344 A GB8711344 A GB 8711344A GB 2192095 B GB2192095 B GB 2192095B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser array
array
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8711344A
Other versions
GB8711344D0 (en
GB2192095A (en
Inventor
Seiichi Miyazawa
Toshitami Hara
Hidetoshi Nojiri
Yoshinobu Sekiguchi
Mitsutoshi Hasegawa
Sotomitsu Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61112202A external-priority patent/JPS62268180A/en
Priority claimed from JP11401086A external-priority patent/JPS62269384A/en
Priority claimed from JP11400386A external-priority patent/JPH06101608B2/en
Priority claimed from JP11400986A external-priority patent/JPS62269383A/en
Priority claimed from JP11744287A external-priority patent/JPS63281492A/en
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB8711344D0 publication Critical patent/GB8711344D0/en
Publication of GB2192095A publication Critical patent/GB2192095A/en
Application granted granted Critical
Publication of GB2192095B publication Critical patent/GB2192095B/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127Lasers; Multiple laser arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/14Heads, e.g. forming of the optical beam spot or modulation of the optical beam specially adapted to record on, or to reproduce from, more than one track simultaneously
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4056Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
GB8711344A 1986-05-15 1987-05-14 Semiconductor laser array Expired GB2192095B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP61112202A JPS62268180A (en) 1986-05-15 1986-05-15 Semiconductor laser device
JP11401086A JPS62269384A (en) 1986-05-19 1986-05-19 semiconductor laser equipment
JP11400386A JPH06101608B2 (en) 1986-05-19 1986-05-19 Semiconductor laser device
JP11400986A JPS62269383A (en) 1986-05-19 1986-05-19 Semiconductor laser device
JP11744287A JPS63281492A (en) 1987-05-13 1987-05-13 Semiconductor laser device

Publications (3)

Publication Number Publication Date
GB8711344D0 GB8711344D0 (en) 1987-06-17
GB2192095A GB2192095A (en) 1987-12-31
GB2192095B true GB2192095B (en) 1989-12-06

Family

ID=27526539

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8711344A Expired GB2192095B (en) 1986-05-15 1987-05-14 Semiconductor laser array

Country Status (2)

Country Link
DE (1) DE3716191A1 (en)
GB (1) GB2192095B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978400A (en) * 1995-03-07 1999-11-02 British Telecommunications Public Limited Company Laser

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277762A (en) * 1978-01-13 1981-07-07 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
FR2417866A1 (en) * 1978-02-17 1979-09-14 Thomson Csf MULTIPLE LASER WITH DISTRIBUTED RESONATOR
JPS58211735A (en) * 1982-06-04 1983-12-09 Canon Inc Multiple beam scanning device
JPS59126A (en) * 1982-06-25 1984-01-05 Canon Inc Device for scanning plural beams
US4603421A (en) * 1982-11-24 1986-07-29 Xerox Corporation Incoherent composite multi-emitter laser for an optical arrangement
NL8301187A (en) * 1983-04-05 1984-11-01 Philips Nv SEMICONDUCTOR DEVICE FOR GENERATING ELECTROMAGNETIC RADIATION.

Also Published As

Publication number Publication date
DE3716191C2 (en) 1992-09-24
GB8711344D0 (en) 1987-06-17
GB2192095A (en) 1987-12-31
DE3716191A1 (en) 1987-11-19

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20070513