GB2191633B - Radiation hardened semiconductor devices - Google Patents

Radiation hardened semiconductor devices

Info

Publication number: GB2191633B
Authority: GB; United Kingdom
Prior art keywords: semiconductor devices; radiation hardened; hardened semiconductor; radiation; devices
Prior art date: 1986-06-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB8713523A

Other versions

GB2191633A (en

GB8713523D0 (en

Inventor

Kamal Tabatabaie-Alavi

Bruce W Black

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Raytheon Co

Original Assignee

Raytheon Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-11

Filing date

1987-06-10

Publication date

1990-02-14

1987-06-10 Application filed by Raytheon Co filed Critical Raytheon Co

1987-07-15 Publication of GB8713523D0 publication Critical patent/GB8713523D0/en

1987-12-16 Publication of GB2191633A publication Critical patent/GB2191633A/en

1990-02-14 Application granted granted Critical

1990-02-14 Publication of GB2191633B publication Critical patent/GB2191633B/en

2007-06-10 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10W42/20—

GB8713523A 1986-06-11 1987-06-10 Radiation hardened semiconductor devices Expired - Fee Related GB2191633B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US87298486A	1986-06-11	1986-06-11

Publications (3)

Publication Number	Publication Date
GB8713523D0 GB8713523D0 (en)	1987-07-15
GB2191633A GB2191633A (en)	1987-12-16
GB2191633B true GB2191633B (en)	1990-02-14

Family

ID=25360747

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8713523A Expired - Fee Related GB2191633B (en)	1986-06-11	1987-06-10	Radiation hardened semiconductor devices

Country Status (4)

Country	Link
JP (1)	JPS62298177A (en)
DE (1)	DE3719535A1 (en)
FR (1)	FR2606552B1 (en)
GB (1)	GB2191633B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH01253957A (en) *	1988-04-04	1989-10-11	Agency Of Ind Science & Technol	Gallium arsenide semiconductor memory integrated circuit
FR2667442B1 (en) *	1989-10-23	1995-02-10	Commissariat Energie Atomique	SEMICONDUCTORS FOR HIGH-RESISTANCE MICROELECTRONIC COMPONENTS AGAINST IONIZING RADIATION.
TWI261892B (en) *	2001-11-05	2006-09-11	Zycube Co Ltd	Semiconductor device using low-k material and method of fabricating the same
CN111291480B (en) *	2020-01-21	2024-10-18	中国科学院微电子研究所	A modeling method and device for MOS device dose rate model
CN115472699B (en) *	2022-09-29	2025-12-23	西安电子科技大学	MOS anti-radiation device with PN junction composite structure and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0005059A2 (en) *	1978-04-24	1979-10-31	Western Electric Company, Incorporated	A semiconductor device having a layered structure and a method of making it
EP0029481A1 (en) *	1979-11-26	1981-06-03	International Business Machines Corporation	Field effect semiconductor structure
US4578127A (en) *	1982-08-13	1986-03-25	At&T Bell Laboratories	Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4247862B1 (en) *	1977-08-26	1995-12-26	Intel Corp	Ionzation resistant mos structure
JPS58107679A (en) *	1981-12-21	1983-06-27	Mitsubishi Electric Corp	Field effect transistor
JPS5963769A (en) *	1982-10-05	1984-04-11	Agency Of Ind Science & Technol	high speed semiconductor device
JPS61289673A (en) *	1985-06-18	1986-12-19	Sumitomo Electric Ind Ltd	Compound semiconductor device

1987
- 1987-06-09 FR FR878708008A patent/FR2606552B1/en not_active Expired - Fee Related
- 1987-06-10 GB GB8713523A patent/GB2191633B/en not_active Expired - Fee Related
- 1987-06-11 DE DE19873719535 patent/DE3719535A1/en not_active Withdrawn
- 1987-06-11 JP JP62146176A patent/JPS62298177A/en active Pending

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0005059A2 (en) *	1978-04-24	1979-10-31	Western Electric Company, Incorporated	A semiconductor device having a layered structure and a method of making it
EP0029481A1 (en) *	1979-11-26	1981-06-03	International Business Machines Corporation	Field effect semiconductor structure
US4578127A (en) *	1982-08-13	1986-03-25	At&T Bell Laboratories	Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer

Also Published As

Publication number	Publication date
GB2191633A (en)	1987-12-16
FR2606552B1 (en)	1991-08-23
JPS62298177A (en)	1987-12-25
GB8713523D0 (en)	1987-07-15
DE3719535A1 (en)	1988-01-28
FR2606552A1 (en)	1988-05-13

Publication	Publication Date	Title
GB8701769D0 (en)	1987-03-04	Semiconductor device
GB8609337D0 (en)	1986-05-21	Semiconductor devices
GB2167229B (en)	1988-07-20	Semiconductor devices
GB8726250D0 (en)	1987-12-16	Semiconductor device
GB2166904B (en)	1987-12-31	Semiconductor devices
EP0235785A3 (en)	1989-03-22	Semiconductor device
GB8803924D0 (en)	1988-03-23	Semiconductor devices
GB8612010D0 (en)	1986-06-25	Semiconductor devices
GB2188778B (en)	1989-11-29	Semiconductor ic devices
GB2209870B (en)	1992-02-05	Semiconductor devices
GB2188479B (en)	1990-05-23	Semiconductor devices
EP0243953A3 (en)	1990-04-25	Compound semiconductor device
GB8630814D0 (en)	1987-02-04	Semiconductor device
GB8727134D0 (en)	1987-12-23	Semiconductor device
EP0231075A3 (en)	1989-02-15	Semiconductor structures
GB2191633B (en)	1990-02-14	Radiation hardened semiconductor devices
GB8819949D0 (en)	1988-09-21	Semiconductor devices
GB8719817D0 (en)	1987-09-30	Semiconductor devices
KR910009358B1 (en)	1991-11-12	Semiconductor devices
GB2168848B (en)	1988-04-20	Semiconductor devices
GB8706061D0 (en)	1987-04-15	Semiconductor device
EP0246574A3 (en)	1988-09-21	Power semiconductor device
GB8627666D0 (en)	1986-12-17	Semiconductor device manufacture
GB2168847B (en)	1988-05-25	Semiconductor devices
GB8705955D0 (en)	1987-04-15	Semiconductor device assembly

Legal Events

Date	Code	Title	Description
1994-02-09	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19930610