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GB2179679B - Method of forming a dielectric film and semiconductor device including said film - Google Patents

Method of forming a dielectric film and semiconductor device including said film

Info

Publication number
GB2179679B
GB2179679B GB8620609A GB8620609A GB2179679B GB 2179679 B GB2179679 B GB 2179679B GB 8620609 A GB8620609 A GB 8620609A GB 8620609 A GB8620609 A GB 8620609A GB 2179679 B GB2179679 B GB 2179679B
Authority
GB
United Kingdom
Prior art keywords
film
forming
semiconductor device
device including
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8620609A
Other versions
GB2179679A (en
GB8620609D0 (en
Inventor
Grzegorz Kaganowicz
John Walter Robinson
Alfred Charles Ipri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8620609D0 publication Critical patent/GB8620609D0/en
Publication of GB2179679A publication Critical patent/GB2179679A/en
Application granted granted Critical
Publication of GB2179679B publication Critical patent/GB2179679B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H10P14/6332—
    • H10P14/69215—
    • H10P14/6929—
    • H10P14/69391—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
GB8620609A 1985-08-27 1986-08-26 Method of forming a dielectric film and semiconductor device including said film Expired - Lifetime GB2179679B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76997585A 1985-08-27 1985-08-27

Publications (3)

Publication Number Publication Date
GB8620609D0 GB8620609D0 (en) 1986-10-01
GB2179679A GB2179679A (en) 1987-03-11
GB2179679B true GB2179679B (en) 1990-01-04

Family

ID=25087086

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8620609A Expired - Lifetime GB2179679B (en) 1985-08-27 1986-08-26 Method of forming a dielectric film and semiconductor device including said film

Country Status (5)

Country Link
JP (1) JPS6358843A (en)
KR (1) KR940005290B1 (en)
DE (1) DE3628399A1 (en)
GB (1) GB2179679B (en)
SG (1) SG134792G (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310610A (en) * 1988-05-07 1994-05-10 Sharp Kabushiki Kaisha Silicon micro sensor and manufacturing method therefor
JPH0748564B2 (en) * 1988-05-07 1995-05-24 シャープ株式会社 Silicon micro sensor
US5387530A (en) * 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
EP0971380A4 (en) * 1997-03-28 2000-06-28 Migaku Takahashi Method for manufacturing magnetoresistance element
KR100480756B1 (en) * 2002-08-02 2005-04-06 한국화학연구원 Process for preparing aluminum oxide thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
US3502950A (en) * 1967-06-20 1970-03-24 Bell Telephone Labor Inc Gate structure for insulated gate field effect transistor
JPS523782B2 (en) * 1972-12-19 1977-01-29
DE2452289A1 (en) * 1974-11-04 1976-05-06 Siemens Ag SEMICONDUCTOR COMPONENT
JPS5527644A (en) * 1978-08-17 1980-02-27 Nec Corp Multi-layer wiring type semiconductor device
JPS5572043A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Preparation of semiconductor device
DE3122382A1 (en) * 1981-06-05 1982-12-23 Ibm Deutschland METHOD FOR PRODUCING A GATE INSULATION LAYER STRUCTURE AND USE OF SUCH A STRUCTURE

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1204544A (en) * 1966-09-02 1970-09-09 Hitachi Ltd Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
KR940005290B1 (en) 1994-06-15
GB2179679A (en) 1987-03-11
SG134792G (en) 1993-03-12
DE3628399A1 (en) 1987-03-05
GB8620609D0 (en) 1986-10-01
JPS6358843A (en) 1988-03-14
KR870002638A (en) 1987-04-06

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940826