GB2175542B - Reactive ion etching device - Google Patents

Reactive ion etching device

Info

Publication number: GB2175542B
Authority: GB; United Kingdom
Prior art keywords: reactive ion; ion etching; etching device; reactive; ion
Prior art date: 1985-03-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB8607979A

Other versions

GB8607979D0 (en

GB2175542A (en

Inventor

Toshihiko Katsura

Masahiro Abe

Kiyoshi Takaoki

Masaharu Aoyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-29

Filing date

1986-04-01

Publication date

1989-06-28

1986-04-01 Application filed by Toshiba Corp filed Critical Toshiba Corp

1986-05-08 Publication of GB8607979D0 publication Critical patent/GB8607979D0/en

1986-12-03 Publication of GB2175542A publication Critical patent/GB2175542A/en

1989-06-28 Application granted granted Critical

1989-06-28 Publication of GB2175542B publication Critical patent/GB2175542B/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- H10P50/242—
- H10P50/267—
- H10P50/268—
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Analytical Chemistry (AREA)
Drying Of Semiconductors (AREA)

GB8607979A 1985-03-29 1986-04-01 Reactive ion etching device Expired GB2175542B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60065407A JPS61224423A (en)	1985-03-29	1985-03-29	Reactive ion etching appratus

Publications (3)

Publication Number	Publication Date
GB8607979D0 GB8607979D0 (en)	1986-05-08
GB2175542A GB2175542A (en)	1986-12-03
GB2175542B true GB2175542B (en)	1989-06-28

Family

ID=13286140

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8607979A Expired GB2175542B (en)	1985-03-29	1986-04-01	Reactive ion etching device

Country Status (2)

Country	Link
JP (1)	JPS61224423A (en)
GB (1)	GB2175542B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4786359A (en) *	1987-06-24	1988-11-22	Tegal Corporation	Xenon enhanced plasma etch
US5292399A (en) *	1990-04-19	1994-03-08	Applied Materials, Inc.	Plasma etching apparatus with conductive means for inhibiting arcing
US5298720A (en) *	1990-04-25	1994-03-29	International Business Machines Corporation	Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
WO1992007377A1 (en) *	1990-10-23	1992-04-30	Genus, Inc.	Sacrificial metal etchback system
US6171974B1 (en) *	1991-06-27	2001-01-09	Applied Materials, Inc.	High selectivity oxide etch process for integrated circuit structures
US5880036A (en)	1992-06-15	1999-03-09	Micron Technology, Inc.	Method for enhancing oxide to nitride selectivity through the use of independent heat control
US6184150B1 (en) *	1992-09-08	2001-02-06	Applied Materials Inc.	Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
US5498313A (en) *	1993-08-20	1996-03-12	International Business Machines Corp.	Symmetrical etching ring with gas control
JP3257741B2 (en) *	1994-03-03	2002-02-18	東京エレクトロン株式会社	Plasma etching apparatus and method
KR0140653B1 (en) *	1994-12-28	1998-07-15	김주용	Etch Rate Control of Reactive Ion Etching Equipment
JP3454333B2 (en) *	1996-04-22	2003-10-06	日清紡績株式会社	Plasma etching electrode
JP4640922B2 (en) *	2003-09-05	2011-03-02	東京エレクトロン株式会社	Plasma processing equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4375385A (en) *	1982-03-25	1983-03-01	Rca Corporation	Plasma etching of aluminum

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52137266A (en) *	1976-05-12	1977-11-16	Nichiden Varian Kk	Method of sputter etching

1985
- 1985-03-29 JP JP60065407A patent/JPS61224423A/en active Pending
1986
- 1986-04-01 GB GB8607979A patent/GB2175542B/en not_active Expired

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4375385A (en) *	1982-03-25	1983-03-01	Rca Corporation	Plasma etching of aluminum

Also Published As

Publication number	Publication date
JPS61224423A (en)	1986-10-06
GB8607979D0 (en)	1986-05-08
GB2175542A (en)	1986-12-03

Publication	Publication Date	Title
EP0205874A3 (en)	1989-04-26	Sputter device
EP0429251A3 (en)	1992-04-15	Reactive ion etching
EP0228969A3 (en)	1989-03-15	Ion sensor
EP0206055A3 (en)	1988-04-06	A reactive ion etching process
GB8528992D0 (en)	1986-01-02	Alignment device
GB8608121D0 (en)	1986-05-08	Electro-display devices
GB2180093B (en)	1990-02-14	Ion implanter
GB8605703D0 (en)	1986-04-16	Plasma etching
JPS57200572A (en)	1982-12-08	Reactive ion etching device
GB2175542B (en)	1989-06-28	Reactive ion etching device
GB8501715D0 (en)	1985-02-27	Retaining device
EP0195184A3 (en)	1988-06-22	Jaw-changing device
GB8521426D0 (en)	1985-10-02	Keep-fit device
GB8516838D0 (en)	1985-08-07	Vacuum devices
GB2178596B (en)	1989-11-01	Arc-extinguishing device
DE3663200D1 (en)	1989-06-08	Fraction-handling device
ZA863060B (en)	1986-12-30	Vacuum devices
GB8509606D0 (en)	1985-05-22	Ion sensor
DE3666798D1 (en)	1989-12-14	Post-clarification device
GB8616269D0 (en)	1986-08-13	Anit-skid devices
GB2145360B (en)	1987-01-07	Reactive ion etching
EP0222729A3 (en)	1987-12-23	Beer-tapping device
GB8516057D0 (en)	1985-07-31	Turning device
GB8606644D0 (en)	1986-04-23	Inertia-sensitive device
DE3660246D1 (en)	1988-07-07	Silo-discharging device

Legal Events

Date	Code	Title	Description
1998-11-11	746	Register noted 'licences of right' (sect. 46/1977)	Effective date: 19981015
2006-04-26	PE20	Patent expired after termination of 20 years	Effective date: 20060331